NTNS3C94NZ D

NTNS3C94NZ
Small Signal MOSFET
12 V, 384 mA, Single N−Channel,
0.62 x 0.62 x 0.4 mm XLLGA3 Package
Features
•
•
•
•
•
Single N−Channel MOSFET
Ultra Small and Thin Package (0.62 x 0.62 x 0.4 mm)
Low RDS(on) Solution in 0.62 x 0.62 mm Package
1.8 V Gate Voltage Rating
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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MOSFET
0.54 W @ 3.7 V
0.60 W @ 3.3 V
12 V
Small Signal Load Switch
Analog Switch
High Speed Interfacing
Optimized for Power Management in Ultra Portable Products
1.90 W @ 1.8 V
N−Channel MOSFET
D (3)
Symbol
Value
Units
Drain-to-Source Voltage
VDSS
12
V
Gate-to-Source Voltage
VGS
±8
V
ID
384
mA
Continuous Drain
Current (Note 1)
Power Dissipation (Note 1)
Steady
State
TA = 25°C
TA = 85°C
277
t≤5s
TA = 25°C
413
Steady
State
TA = 25°C
t≤5s
TA = 25°C
Pulsed Drain Current
tp = 10 ms
PD
mW
120
1
3
A
TJ,
TSTG
-55 to
150
°C
Source Current (Body Diode) (Note 2)
IS
157
mA
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Units
Junction-to-Ambient – Steady State (Note 1)
RθJA
1040
°C/W
Junction-to-Ambient – t ≤ 5 s (Note 1)
RθJA
900
1. Surface Mounted on FR4 Board using the minimum recommended pad size,
(or 2 mm2), 1 oz Cu.
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
June, 2016 − Rev. 0
MARKING
DIAGRAM
140
115
© Semiconductor Components Industries, LLC, 2016
G (1)
S (2)
IDM
Operating Junction and Storage
Temperature
384 mA
0.80 W @ 2.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
ID MAX
0.48 W @ 4.5 V
Applications
•
•
•
•
RDS(on) MAX
V(BR)DSS
1
XLLGA3
CASE 713AE
2
EM
1
E = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
NTNS3C94NZT5G
XLLGA3
(Pb−Free)
8000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTNS3C94NZ/D
NTNS3C94NZ
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
12
Typ
Max
Units
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
ID = 250 mA, ref to 25°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 9.6 V
Gate-to-Source Leakage Current
IGSS
VDS = 0 V, VGS = ±10 V
VGS(TH)
VGS = VDS, ID = 250 mA
V
11
TJ = 25°C
mV/°C
1.0
mA
±10
mA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Gate Threshold
Temperature Coefficient
Drain-to-Source On Resistance
VGS(TH)/TJ
0.4
1.0
0.8
RDS(on)
VGS = 4.5 V, ID = 100 mA
0.35
0.48
VGS = 3.7 V, ID = 75 mA
0.40
0.54
VGS = 3.3 V, ID = 75 mA
0.43
0.60
VGS = 2.5 V, ID = 50 mA
0.55
0.80
VGS = 1.8 V, ID = 20 mA
1.0
1.9
VGS = 1.5 V, ID = 10 mA
1.8
Forward Transconductance
gFS
VDS = 5 V, ID = 100 mA
0.6
Source−Drain Diode Voltage
VSD
VGS = 0 V, IS = 100 mA
0.76
V
mV/°C
W
S
1.0
V
CHARGES & CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
35
VGS = 0 V, f = 1 MHz,
VDS =9. 6 V
COSS
6.0
CRSS
4.1
Total Gate Charge
QG(TOT)
0.6
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
VGS = 4.5 V, VDS = 9.6 V,
ID = 100 mA
pF
nC
0.1
0.1
0.1
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
7.0
VGS = 4.5 V, VDD = 9.6 V,
ID = 100 mA, RG = 2 W
tf
ns
6.3
152
80
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTNS3C94NZ
TYPICAL CHARACTERISTICS
0.36
0.40
VGS = 2.5 V to 4.5 V
VGS = 1.8 V
0.24
0.20
VGS = 1.5 V
0.16
0.12
0.08
VGS = 1.2 V
0.04
0.00
0.0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
0.28
TJ = 125°C
TJ = 25°C
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
1.5
1.0
2.0
2.5
3.0
0.5
0
1.0
1.5
2.0
2.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
3000
2500
TJ = 25°C
TJ = 25°C
ID = 0.075 A
2000
1500
1000
500
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
2500
2000
VGS = 1.8 V
1500
1000
VGS = 2.5 V
500
VGS = 4.5 V
0
0.1
5.0
0.2
VGS, GATE VOLTAGE (V)
0.5
0.6
100
VGS = 10 V
ID = 0.075 A
IDSS, LEAKAGE (nA)
1.4
0.4
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.6
1.5
0.3
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE (W)
TJ = −55°C
VDS = 10 V
0.35
VGS = 2.0 V
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (W)
ID, DRAIN CURRENT (A)
0.32
1.3
1.2
1.1
1.0
0.9
10
TJ = 125°C
1
0.1
TJ = 85°C
0.8
0.7
0.6
−50
0.01
−25
0
25
50
75
100
125
150
5
6
7
8
9
10
11
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
12
NTNS3C94NZ
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
100
C, CAPACITANCE (pF)
CISS
COSS
10
CRSS
VGS = 0 V
f = 1 MHz
TJ = 25°C
1
0
2
6
4
8
10
4.0
3.5
3.0
2.5
2.0
QGS
QGD
1.5
1.0
VDS = 9.6 V
ID = 0.1 A
TJ = 25°C
0.5
0
0
12
0.1
0.2
0.3
0.4
0.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
0.6
1
VGS = 4.5 V
VDS = 9.6 V
ID = 0.1 A
IS, SOURCE CURRENT (A)
VGS = 0 V
td(off)
100
tf
10
td(on)
tr
TJ = 125°C
0.1
0.5
0.6
1
1
10
100
TJ = 25°C
0.7
TJ = −55°C
0.8
0.9
1.0
1.1
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
10
ID, DRAIN CURRENT (A)
t, TIME (ns)
4.5
0 V ≤ VGS ≤ 4.5 V
Single Pulse
TA = 25°C
1 TJ = 150°C
10 ms
100 ms
1 ms
0.1
10 ms
0.01
0.001
0.01
dc
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
100
NTNS3C94NZ
TYPICAL CHARACTERISTICS
R(t), EFFECTIVE TRANSIENT
THERMAL RESPONSE (°C/W)
10000
1000 Duty Cycle = 0.5
0.2
100
0.1
0.05
0.02
10 0.01
Single Pulse
1
0.000001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
Figure 12. FET Thermal Response
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5
1
10
100
1000
NTNS3C94NZ
PACKAGE DIMENSIONS
XLLGA3, 0.62x0.62
CASE 713AE
ISSUE O
É
É
A B
D
PIN ONE
REFERENCE
0.10 C
0.10 C
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
E
DIM
A
A1
b
b1
D
D2
D3
E
E2
e
e1
L
L2
TOP VIEW
0.10 C
A
3X
0.10 C
A1
C
SIDE VIEW
SEATING
PLANE
RECOMMENDED
SOLDER FOOTPRINT*
D3
e1
D2
b1
MILLIMETERS
MIN
MAX
0.340 0.440
0.000 0.030
0.100 0.200
0.150 0.250
0.620 BSC
0.175 BSC
0.205 BSC
0.620 BSC
0.400 0.600
0.200 BSC
0.175 BSC
0.090 0.210
0.110 0.310
2
2X
0.300
E2
0.200
1
3
0.600
3
e
1
L2
b
2X
L
0.10
M
C A B
0.05
M
C
0.600
2
0.250
ALL 3 PADS
BOTTOM VIEW
0.360
0.760
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTNS3C94NZ/D