NTNS3C94NZ Small Signal MOSFET 12 V, 384 mA, Single N−Channel, 0.62 x 0.62 x 0.4 mm XLLGA3 Package Features • • • • • Single N−Channel MOSFET Ultra Small and Thin Package (0.62 x 0.62 x 0.4 mm) Low RDS(on) Solution in 0.62 x 0.62 mm Package 1.8 V Gate Voltage Rating These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com MOSFET 0.54 W @ 3.7 V 0.60 W @ 3.3 V 12 V Small Signal Load Switch Analog Switch High Speed Interfacing Optimized for Power Management in Ultra Portable Products 1.90 W @ 1.8 V N−Channel MOSFET D (3) Symbol Value Units Drain-to-Source Voltage VDSS 12 V Gate-to-Source Voltage VGS ±8 V ID 384 mA Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C TA = 85°C 277 t≤5s TA = 25°C 413 Steady State TA = 25°C t≤5s TA = 25°C Pulsed Drain Current tp = 10 ms PD mW 120 1 3 A TJ, TSTG -55 to 150 °C Source Current (Body Diode) (Note 2) IS 157 mA Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Symbol Max Units Junction-to-Ambient – Steady State (Note 1) RθJA 1040 °C/W Junction-to-Ambient – t ≤ 5 s (Note 1) RθJA 900 1. Surface Mounted on FR4 Board using the minimum recommended pad size, (or 2 mm2), 1 oz Cu. 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. June, 2016 − Rev. 0 MARKING DIAGRAM 140 115 © Semiconductor Components Industries, LLC, 2016 G (1) S (2) IDM Operating Junction and Storage Temperature 384 mA 0.80 W @ 2.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter ID MAX 0.48 W @ 4.5 V Applications • • • • RDS(on) MAX V(BR)DSS 1 XLLGA3 CASE 713AE 2 EM 1 E = Specific Device Code M = Date Code ORDERING INFORMATION Device Package Shipping† NTNS3C94NZT5G XLLGA3 (Pb−Free) 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTNS3C94NZ/D NTNS3C94NZ ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min 12 Typ Max Units OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = 250 mA, ref to 25°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 9.6 V Gate-to-Source Leakage Current IGSS VDS = 0 V, VGS = ±10 V VGS(TH) VGS = VDS, ID = 250 mA V 11 TJ = 25°C mV/°C 1.0 mA ±10 mA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Gate Threshold Temperature Coefficient Drain-to-Source On Resistance VGS(TH)/TJ 0.4 1.0 0.8 RDS(on) VGS = 4.5 V, ID = 100 mA 0.35 0.48 VGS = 3.7 V, ID = 75 mA 0.40 0.54 VGS = 3.3 V, ID = 75 mA 0.43 0.60 VGS = 2.5 V, ID = 50 mA 0.55 0.80 VGS = 1.8 V, ID = 20 mA 1.0 1.9 VGS = 1.5 V, ID = 10 mA 1.8 Forward Transconductance gFS VDS = 5 V, ID = 100 mA 0.6 Source−Drain Diode Voltage VSD VGS = 0 V, IS = 100 mA 0.76 V mV/°C W S 1.0 V CHARGES & CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS 35 VGS = 0 V, f = 1 MHz, VDS =9. 6 V COSS 6.0 CRSS 4.1 Total Gate Charge QG(TOT) 0.6 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD VGS = 4.5 V, VDS = 9.6 V, ID = 100 mA pF nC 0.1 0.1 0.1 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) 7.0 VGS = 4.5 V, VDD = 9.6 V, ID = 100 mA, RG = 2 W tf ns 6.3 152 80 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTNS3C94NZ TYPICAL CHARACTERISTICS 0.36 0.40 VGS = 2.5 V to 4.5 V VGS = 1.8 V 0.24 0.20 VGS = 1.5 V 0.16 0.12 0.08 VGS = 1.2 V 0.04 0.00 0.0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 0.28 TJ = 125°C TJ = 25°C 0.30 0.25 0.20 0.15 0.10 0.05 0 0.5 1.5 1.0 2.0 2.5 3.0 0.5 0 1.0 1.5 2.0 2.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 3000 2500 TJ = 25°C TJ = 25°C ID = 0.075 A 2000 1500 1000 500 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 2500 2000 VGS = 1.8 V 1500 1000 VGS = 2.5 V 500 VGS = 4.5 V 0 0.1 5.0 0.2 VGS, GATE VOLTAGE (V) 0.5 0.6 100 VGS = 10 V ID = 0.075 A IDSS, LEAKAGE (nA) 1.4 0.4 Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.6 1.5 0.3 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE (W) TJ = −55°C VDS = 10 V 0.35 VGS = 2.0 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 0.32 1.3 1.2 1.1 1.0 0.9 10 TJ = 125°C 1 0.1 TJ = 85°C 0.8 0.7 0.6 −50 0.01 −25 0 25 50 75 100 125 150 5 6 7 8 9 10 11 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 12 NTNS3C94NZ TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 100 C, CAPACITANCE (pF) CISS COSS 10 CRSS VGS = 0 V f = 1 MHz TJ = 25°C 1 0 2 6 4 8 10 4.0 3.5 3.0 2.5 2.0 QGS QGD 1.5 1.0 VDS = 9.6 V ID = 0.1 A TJ = 25°C 0.5 0 0 12 0.1 0.2 0.3 0.4 0.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 1000 0.6 1 VGS = 4.5 V VDS = 9.6 V ID = 0.1 A IS, SOURCE CURRENT (A) VGS = 0 V td(off) 100 tf 10 td(on) tr TJ = 125°C 0.1 0.5 0.6 1 1 10 100 TJ = 25°C 0.7 TJ = −55°C 0.8 0.9 1.0 1.1 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 10 ID, DRAIN CURRENT (A) t, TIME (ns) 4.5 0 V ≤ VGS ≤ 4.5 V Single Pulse TA = 25°C 1 TJ = 150°C 10 ms 100 ms 1 ms 0.1 10 ms 0.01 0.001 0.01 dc RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 4 100 NTNS3C94NZ TYPICAL CHARACTERISTICS R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE (°C/W) 10000 1000 Duty Cycle = 0.5 0.2 100 0.1 0.05 0.02 10 0.01 Single Pulse 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) Figure 12. FET Thermal Response www.onsemi.com 5 1 10 100 1000 NTNS3C94NZ PACKAGE DIMENSIONS XLLGA3, 0.62x0.62 CASE 713AE ISSUE O É É A B D PIN ONE REFERENCE 0.10 C 0.10 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. E DIM A A1 b b1 D D2 D3 E E2 e e1 L L2 TOP VIEW 0.10 C A 3X 0.10 C A1 C SIDE VIEW SEATING PLANE RECOMMENDED SOLDER FOOTPRINT* D3 e1 D2 b1 MILLIMETERS MIN MAX 0.340 0.440 0.000 0.030 0.100 0.200 0.150 0.250 0.620 BSC 0.175 BSC 0.205 BSC 0.620 BSC 0.400 0.600 0.200 BSC 0.175 BSC 0.090 0.210 0.110 0.310 2 2X 0.300 E2 0.200 1 3 0.600 3 e 1 L2 b 2X L 0.10 M C A B 0.05 M C 0.600 2 0.250 ALL 3 PADS BOTTOM VIEW 0.360 0.760 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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