NTTFS5C670NL D

NTTFS5C670NL
Power MOSFET
60 V, 6.5 mW, 70 A, Single N−Channel
Features
•
•
•
•
Small Footprint (3.3 x 3.3 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(on) MAX
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
6.5 mW @ 10 V
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage
VGS
±20
V
ID
70
A
Continuous Drain
Current RqJC
(Notes 1, 2, 3, 4)
TC = 25°C
Power Dissipation
RqJC (Notes 1, 2, 3)
Continuous Drain
Current RqJA
(Notes 1 & 3, 4)
Steady
State
TC = 100°C
TC = 25°C
Power Dissipation
RqJA (Notes 1, 3)
Pulsed Drain Current
Steady
State
PD
W
ID
A
16
PD
S (1, 2, 3)
W
3.2
1.6
MARKING DIAGRAM
440
TJ, Tstg
−55 to
+175
°C
IS
68
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 3.6 A)
EAS
166
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Source Current (Body Diode)
G (4)
11
IDM
Operating Junction and Storage Temperature
N−Channel
31
TA = 100°C
TA = 25°C, tp = 10 ms
70 A
9.1 mW @ 4.5 V
D (5 − 8)
63
TA = 100°C
TA = 25°C
60 V
49
TC = 100°C
TA = 25°C
ID MAX
A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1
WDFN8
(m8FL)
CASE 511AB
670L
A
Y
WW
G
1
S
S
S
G
670L
AYWWG
G
D
D
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Symbol
Value
Unit
ORDERING INFORMATION
Junction−to−Case − Steady State (Note 3)
RqJC
2.4
°C/W
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Junction−to−Ambient − Steady State (Note 3)
RqJA
47
Parameter
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2016
March, 2016 − Rev. 0
1
Publication Order Number:
NTTFS5C670NL/D
NTTFS5C670NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
27
VGS = 0 V,
VDS = 60 V
mV/°C
TJ = 25°C
10
TJ = 125°C
250
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 53 mA
100
mA
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
1.2
2.0
−4.7
VGS = 10 V
ID = 35 A
5.4
6.5
VGS = 4.5 V
ID = 35 A
7.3
9.1
gFS
VDS = 15 V, ID = 35 A
V
mV/°C
82
mW
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
1400
VGS = 0 V, f = 1 MHz, VDS = 25 V
690
pF
15
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 30 V; ID = 35 A
9.0
nC
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 30 V; ID = 35 A
20
nC
Threshold Gate Charge
QG(TH)
2.5
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
4.5
Plateau Voltage
VGP
3.1
td(ON)
11
VGS = 4.5 V, VDS = 30 V; ID = 35 A
nC
2.0
V
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 4.5 V, VDS = 30 V,
ID = 35 A, RG = 2.5 W
tf
60
ns
15
4
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
VSD
VGS = 0 V,
IS = 35 A
TJ = 25°C
0.9
TJ = 125°C
0.8
tRR
ta
tb
1.2
V
34
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 35 A
QRR
17
ns
17
19
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTTFS5C670NL
TYPICAL CHARACTERISTICS
ID, DRAIN CURRENT (A)
120
140
4.5 V
6.5 V to
10 V
VDS = 5 V
120
ID, DRAIN CURRENT (A)
140
3.8 V
100
80
3.4 V
60
40
3.0 V
20
80
60
TJ = 25°C
40
20
2.6 V
0
TJ = 125°C
TJ = −55°C
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
1.0
1.5
2.0
2.5
3.0
3.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
15
TJ = 25°C
ID = 35 A
13
11
9
7
5
3.5
0.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
100
4.5
5.5
6.5
7.5
8.5
9.5
VGS, GATE VOLTAGE (V)
4.0
10
TJ = 25°C
9
8
VGS = 4.5 V
7
6
VGS = 10 V
5
4
5
15
25
35
45
55
65
75
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.8
VGS = 10 V
ID = 35 A
TJ = 175°C
IDSS, LEAKAGE (nA)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
100000
2.0
1.6
1.4
1.2
1.0
10000
TJ = 125°C
1000
TJ = 85°C
100
0.8
0.6
−50
10
−25
0
25
50
75
100
125
150
175
10
20
30
40
50
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
60
NTTFS5C670NL
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
10000
CISS
1000
COSS
100
CRSS
10
VGS = 0 V
TJ = 25°C
f = 1 MHz
1
0
10
20
30
40
50
60
10
QT
9
8
7
6
5
QGD
4
QGS
3
VDS = 30 V
TJ = 25°C
ID = 35 A
2
1
0
0
2
4
6
8
10
12
14
16
18
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
20
t, TIME (ns)
100
IS, SOURCE CURRENT (A)
1000
tr
td(on)
td(off)
10
VGS = 4.5 V
VDS = 30 V
ID = 35 A
tf
1
10
TJ = 25°C
TJ = −55°C
1
1
10
0.3
100
0.6
0.7
0.8
0.9
1.0
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
IPEAK, DRAIN CURRENT (A)
100
500 ms
10
10 ms
0.1
0.1
0.5
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
TC = 25°C
VGS ≤ 10 V
Single Pulse
1
0.4
RG, GATE RESISTANCE (W)
1000
ID, DRAIN CURRENT (A)
TJ = 125°C
RDS(on) Limit
Thermal Limit
Package Limit
1
1 ms
10
TJ(initial) = 25°C
TJ(initial) = 100°C
1
0.1
10
100
1E−5
1E−4
1E−3
1E−2
VDS (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NTTFS5C670NL
100
50% Duty Cycle
R(t) (°C/W)
10
1
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Marking
Package
Shipping†
NTTFS5C670NLTAG
670L
WDFN8
(Pb−Free)
1500 / Tape & Reel
NTTFS5C670NLTWG
670L
WDFN8
(Pb−Free)
5000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTTFS5C670NL
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
0.20 C
D
A
B
D1
2X
0.20 C
8 7 6 5
4X
q
E1 E
c
1 2 3 4
A1
TOP VIEW
0.10 C
A
0.10 C
SIDE VIEW
0.10
8X b
C A B
0.05
C
4X
DETAIL A
6X
C
e
SEATING
PLANE
DETAIL A
8X
e/2
L
0.42
4
INCHES
NOM
0.030
−−−
0.012
0.008
0.130 BSC
0.116
0.120
0.078
0.083
0.130 BSC
0.116
0.120
0.058
0.063
0.009
0.012
0.026 BSC
0.012
0.016
0.026
0.032
0.012
0.017
0.002
0.005
0.055
0.059
0_
−−−
MIN
0.028
0.000
0.009
0.006
0.65
PITCH
PACKAGE
OUTLINE
K
MAX
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.016
0.020
0.037
0.022
0.008
0.063
12 _
4X
0.66
M
E3
8
G
MILLIMETERS
MIN
NOM
MAX
0.80
0.70
0.75
0.00
−−−
0.05
0.23
0.30
0.40
0.15
0.20
0.25
3.30 BSC
2.95
3.05
3.15
1.98
2.11
2.24
3.30 BSC
2.95
3.05
3.15
1.47
1.60
1.73
0.23
0.30
0.40
0.65 BSC
0.30
0.41
0.51
0.65
0.80
0.95
0.30
0.43
0.56
0.06
0.13
0.20
1.40
1.50
1.60
0_
−−−
12 _
SOLDERING FOOTPRINT*
1
E2
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
q
5
D2
BOTTOM VIEW
3.60
L1
0.75
2.30
0.57
0.47
2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
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Sales Representative
NTTFS5C670NL/D