NTTFS5116PL D

NTTFS5116PL
Power MOSFET
−60 V, −20 A, 52 mW
Features
• Low RDS(on)
• Fast Switching
• These Devices are Pb−Free and are RoHS Compliant
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Applications
V(BR)DSS
• Load Switches
• DC Motor Control
• DC−DC Conversion
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−60
V
Gate−to−Source Voltage
VGS
±20
V
ID
−5.7
A
Continuous Drain
Current RqJA (Note 1)
Continuous Drain
Current RqJC (Note 1)
TA = 25°C
TA = 100°C
TA = 25°C
Steady
State
PD
3.2
ID
−20
TA = 100°C
TC = 25°C
tp = 10 ms
L = 0.1 mH
G (4)
MARKING DIAGRAM
W
−76
A
TJ,
Tstg
−55 to
+175
°C
IS
−20
A
EAS
45
mJ
IAS
30
A
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Symbol
Value
Unit
Junction−to−Case – Steady
State (Note 1)
RqJC
3.8
°C/W
Junction−to−Ambient – Steady
State (Note 1)
RqJA
47
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces.
November, 2011 − Rev. 1
WDFN8
(m8FL)
CASE 511AB
5116
A
Y
WW
G
1
5116
AYWWG
G
D
D
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
THERMAL RESISTANCE MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2011
1
S
S
S
G
1
IDM
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Parameter
S (1,2,3)
A
20
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy
D (5−8)
W
40
TC = 100°C
Operating Junction and Storage Temperature
P−Channel MOSFET
−14
PD
−20 A
72 mW @ −4.5 V
1.6
TC = 25°C
TC = 100°C
Power Dissipation
RqJC (Note 1)
Pulsed Drain Current
−4.0
ID MAX
52 mW @ −10 V
−60 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Power Dissipation RqJA
(Note 1)
RDS(on) MAX
Package
Shipping†
NTTFS5116PLTAG
WDFN8 1500/Tape & Reel
(Pb−Free)
NTTFS5116PLTWG
WDFN8 5000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTTFS5116PL/D
NTTFS5116PL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
−60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
69.7
IDSS
Gate−to−Source Leakage Current
V
VGS = 0 V,
VDS = −60 V
mV/°C
TJ = 25°C
−1.0
TJ = 125°C
−100
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = −250 mA
±100
mA
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
−1
−3
−6.2
gFS
VGS = −10 V
ID = −6 A
37
52
VGS = −4.5 V
ID = −4.4 A
51
72
VDS = −15 V, ID = −6 A
V
mV/°C
mW
11
S
1258
pF
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
VGS = 0 V, f = 1.0 MHz, VDS = −30 V
127
84
VGS = −10 V, VDS = −48 V, ID = −5 A
25
VGS = −4.5 V, VDS = −48 V, ID = −5 A
14
nC
nC
Threshold Gate Charge
QG(TH)
1
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Plateau Voltage
VGP
3.1
V
Gate Resistance
RG
5.3
W
td(on)
15
ns
VGS = −4.5 V, VDS = −48 V, ID = −5 A
4
7
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(off)
VGS = −4.5 V, VDS = −48 V,
ID = −5 A, RG = 6 W
tf
58
30
37
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
−0.79
TJ = 125°C
−0.64
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = −5 A
20
VGS = 0 V, dIS/dt = −100 A/ms,
IS = −5 A
QRR
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2
V
ns
15
5
19
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
−1.2
nC
NTTFS5116PL
TYPICAL CHARACTERISTICS
40
40
VDS ≥ 10 V
VGS = 4.5 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = 10 V
30
VGS = 4 V
20
VGS = 3.5 V
10
30
20
TJ = 25°C
10
TJ = 125°C
VGS = 3 V
0
0
1
2
3
4
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0
5
TJ = −55°C
2
0.075
ID = −6 A
TJ = 25°C
0.065
0.055
0.045
0.035
2
4
6
8
VGS, GATE−TO−SOURCE VOLTAGE (V)
10
0.080
TJ = 25°C
0.070
0.060
0.040
0.030
VGS = 10 V
5
10
15
20
25
30
ID, DRAIN CURRENT (A)
35
40
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
2.0
ID = −4.4 A
VGS = 4.5 V
VGS = 0 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
VGS = 4.5 V
0.050
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.8
6
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
3
4
5
VGS, GATE−TO−SOURCE VOLTAGE (V)
1.6
1.4
1.2
1.0
TJ = 150°C
1,000
TJ = 125°C
0.8
0.6
−50
−25
0
25
50
75
100
125
150
175
100
10
20
30
40
50
TJ, JUNCTION TEMPERATURE (°C)
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
60
NTTFS5116PL
TYPICAL CHARACTERISTICS
10
VGS = 0 V
TJ = 25°C
C, CAPACITANCE (pF)
1600
1400
Ciss
1200
1000
800
600
400
200
0
Coss
Crss
0
10
20
30
40
50
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE
(V)
1800
QT
8
6
4
Qgs
VDS = −48 V
ID = −5 A
TJ = 25°C
2
0
0
60
5
10
15
20
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
40
100
−IS, SOURCE CURRENT (A)
t, TIME (ns)
VDD = −48 V
ID = −5 A
VGS = −4.5 V
tf
tr
td(off)
10
td(on)
1
1
10
RG, GATE RESISTANCE (W)
100
VGS = 0 V
TJ = 25°C
30
20
10
0
0.5
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
1 ms
VGS = −10 V
Single Pulse
TC = 25°C
100 ms
10 ms
10 ms
10
dc
1
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
10
0.6
0.7
0.8
0.9
1.0
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
1.1
Figure 10. Diode Forward Voltage vs. Current
100
−ID, DRAIN CURRENT (A)
25
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
0.1
Qgd
100
45
30
15
0
25
50
75
100
125
150
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
175
NTTFS5116PL
TYPICAL CHARACTERISTICS
100
D = 0.5
D = 0.2
D = 0.1
D = 0.05
RqJA (t)
10
1
D = 0.02
D = 0.01
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 13. Thermal Response
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5
1
10
100
1000
NTTFS5116PL
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE C
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
0.20 C
D
A
D1
B
2X
0.20 C
8 7 6 5
4X
E1 E
q
c
1 2 3 4
A1
TOP VIEW
0.10 C
A
C
6X
e
0.10 C
SIDE VIEW
DETAIL A
SEATING
PLANE
DETAIL A
q
8X
0.10 B
C A
0.05
L
8X
e/2
0.42
14
0.116
0.078
0.116
0.058
0.009
0.012
0.025
0.012
0.002
0.055
0°
INCHES
NOM
0.030
***
0.012
0.008
0.130 BSC
0.120
0.083
0.130 BSC
0.120
0.063
0.012
0.026 BSC
0.016
***
0.017
0.005
0.059
***
MAX
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.016
0.020
***
0.022
0.008
0.063
12°
4X
0.66
M
E3
8
G
MIN
0.028
0.000
0.009
0.006
0.65
PITCH
PACKAGE
OUTLINE
K
E2
MILLIMETERS
MIN
NOM
MAX
0.70
0.75
0.80
0.00
*** 0.05
0.40
0.23
0.30
0.25
0.15
0.20
3.30 BSC
3.15
2.95
3.05
1.98
2.24
2.11
3.30 BSC
2.95
3.15
3.05
1.73
1.47
1.60
0.23
0.30
0.40
0.65 BSC
0.30
0.41
0.51
0.64
*** ***
0.30
0.43
0.56
0.06
0.13
0.20
1.60
1.40
1.50
0°
*** 12°
SOLDERING FOOTPRINT*
C
4X
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
5
D2
BOTTOM VIEW
3.60
L1
0.75
2.30
0.57
0.47
2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb *Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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NTTFS5116PL/D