NTTFS5C454NL Power MOSFET 40 V, 3.8 mW, 85 A, Single N−Channel Features • • • • Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC (Notes 1, 3) TC = 25°C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State TC = 25°C Power Dissipation RqJA (Notes 1 & 2) Pulsed Drain Current Value Unit VDSS 40 V VGS ±20 V ID 85 A Steady State PD ID W 55 D (5) G (4) S (1,2,3) N−CHANNEL MOSFET PD W 3.2 MARKING DIAGRAM 1.6 520 A TJ, Tstg −55 to +175 °C IS 61 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 5 A) EAS 202 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Source Current (Body Diode) 85 A 6 mW @ 4.5 V A 20 IDM Operating Junction and Storage Temperature 3.8 mW @ 10 V 14 TA = 100°C TA = 25°C, tp = 10 ms ID MAX 27 TA = 100°C TA = 25°C RDS(ON) MAX 60 TC = 100°C TA = 25°C V(BR)DSS 40 V Symbol TC = 100°C www.onsemi.com Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1 WDFN8 (m8FL) CASE 511AB 454L A Y WW G 1 S S S G 454L AYWWG G D D D D = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction−to−Case − Steady State Parameter RqJC 2.7 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 47 ORDERING INFORMATION See detailed ordering, marking and shipping information on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2016 March, 2016 − Rev. 0 1 Publication Order Number: NTTFS5C454NL/D NTTFS5C454NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 22 VGS = 0 V, VDS = 40 V mV/°C TJ = 25 °C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 45 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 1.2 2.0 −5.1 VGS = 10 V ID = 20 A 3.2 3.8 VGS = 4.5 V ID = 20 A 4.8 6 gFS VDS = 15 V, ID = 40 A V mV/°C 80 mW S CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 1600 VGS = 0 V, f = 1 MHz, VDS = 25 V 590 pF 21 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 20 V; ID = 40 A Total Gate Charge QG(TOT) 8.2 Threshold Gate Charge QG(TH) 2 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 2.1 Plateau Voltage VGP 3.2 td(ON) 9.3 VGS = 4.5 V, VDS = 20 V; ID = 40 A 18 nC 3.8 V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDS = 20 V, ID = 40 A, RG = 2.5 W tf 100 ns 17 4 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 40 A TJ = 25°C 0.86 TJ = 125°C 0.75 tRR ta tb 1.2 V 29 VGS = 0 V, dIS/dt = 100 A/ms, IS = 40 A QRR 14 ns 15 200 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTTFS5C454NL TYPICAL CHARACTERISTICS 80 80 VDS = 10 V 10 V to 3.6 V 70 50 40 2.8 V 30 20 60 50 40 30 TJ = 25°C 20 10 10 0 0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 3.2 V 60 0.5 1.0 1.5 2.0 2.5 3.0 TJ = −55°C 2 3 5 4 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics TJ = 25°C ID = 20 A 18 16 14 12 10 8 6 4 2 3 4 5 6 7 9 8 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 8 TJ = 25°C 7 6 VGS = 4.5 V 5 4 VGS = 10 V 3 2 0 10 20 30 40 50 60 70 80 90 100 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.0 1.E+05 1.9 VGS = 10 V ID = 20 A 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 −50 −25 0 TJ = 175°C IDSS, LEAKAGE (A) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 20 2 TJ = 125°C 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 70 1.E+04 TJ = 125°C 1.E+03 TJ = 85°C 1.E+02 1.E+01 25 50 75 100 125 150 175 5 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 40 NTTFS5C454NL TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 10000 CISS 1000 COSS 100 VGS = 0 V TJ = 25°C f = 1 MHz CRSS 10 0 5 10 15 20 25 30 35 40 10 QT 9 8 7 6 5 QGD QGS 4 3 VDS = 20 V ID = 40 A TJ = 25°C 2 1 0 0 2 4 6 8 10 12 14 18 16 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total Charge 100 1000 IS, SOURCE CURRENT (A) VGS = 0 V tr t, TIME (ns) 100 td(off) tf 10 1 td(on) VGS = 4.5 V VDD = 20 V ID = 40 A 1 10 10 1 0.1 0.01 0.001 100 TJ = 25°C TJ = −55°C TJ = 125°C 0.2 0 0.4 0.6 0.8 1.0 1.2 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 1000 500 ms 100 10 ms 10 IPEAK, (A) ID, DRAIN CURRENT (A) 1 ms TC = 25°C VGS ≤ 10 V Single Pulse 1 TJ (initial) = 100°C RDS(on) Limit Thermal Limit Package Limit 1 0.1 0.1 TJ (initial) = 25°C 10 1 10 1E−4 100 1E−3 VDS (V) TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 1E−2 NTTFS5C454NL TYPICAL CHARACTERISTICS 100 50% Duty Cycle RqJA (°C/W) 10 1 20% 10% 5% 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Marking Package Shipping† NTTFS5C454NLTAG 454L WDFN8 (Pb−Free) 1500 / Tape & Reel NTTFS5C454NLTWG 454L WDFN8 (Pb−Free) 5000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NTTFS5C454NL PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A B D1 2X 0.20 C 8 7 6 5 4X q E1 E c 1 2 3 4 A1 TOP VIEW 0.10 C A 0.10 C SIDE VIEW 0.10 8X b C A B 0.05 C 4X DETAIL A 6X C e SEATING PLANE DETAIL A 8X e/2 L 0.42 4 INCHES NOM 0.030 −−− 0.012 0.008 0.130 BSC 0.116 0.120 0.078 0.083 0.130 BSC 0.116 0.120 0.058 0.063 0.009 0.012 0.026 BSC 0.012 0.016 0.026 0.032 0.012 0.017 0.002 0.005 0.055 0.059 0_ −−− MIN 0.028 0.000 0.009 0.006 0.65 PITCH PACKAGE OUTLINE K MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.016 0.020 0.037 0.022 0.008 0.063 12 _ 4X 0.66 M E3 8 G MILLIMETERS MIN NOM MAX 0.70 0.75 0.80 0.00 −−− 0.05 0.23 0.30 0.40 0.15 0.20 0.25 3.30 BSC 2.95 3.05 3.15 1.98 2.11 2.24 3.30 BSC 2.95 3.05 3.15 1.47 1.60 1.73 0.23 0.30 0.40 0.65 BSC 0.30 0.41 0.51 0.65 0.80 0.95 0.30 0.43 0.56 0.06 0.13 0.20 1.40 1.50 1.60 0_ −−− 12 _ SOLDERING FOOTPRINT* 1 E2 DIM A A1 b c D D1 D2 E E1 E2 E3 e G K L L1 M q 5 D2 BOTTOM VIEW 3.60 L1 0.75 2.30 0.57 0.47 2.37 3.46 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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