NTTFS5C454NL D

NTTFS5C454NL
Power MOSFET
40 V, 3.8 mW, 85 A, Single N−Channel
Features
•
•
•
•
Small Footprint (3.3 x 3.3 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJC
(Notes 1, 3)
TC = 25°C
Power Dissipation
RqJC (Note 1)
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Steady
State
TC = 25°C
Power Dissipation
RqJA (Notes 1 & 2)
Pulsed Drain Current
Value
Unit
VDSS
40
V
VGS
±20
V
ID
85
A
Steady
State
PD
ID
W
55
D (5)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
PD
W
3.2
MARKING
DIAGRAM
1.6
520
A
TJ, Tstg
−55 to
+175
°C
IS
61
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 5 A)
EAS
202
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Source Current (Body Diode)
85 A
6 mW @ 4.5 V
A
20
IDM
Operating Junction and Storage Temperature
3.8 mW @ 10 V
14
TA = 100°C
TA = 25°C, tp = 10 ms
ID MAX
27
TA = 100°C
TA = 25°C
RDS(ON) MAX
60
TC = 100°C
TA = 25°C
V(BR)DSS
40 V
Symbol
TC = 100°C
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Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1
WDFN8
(m8FL)
CASE 511AB
454L
A
Y
WW
G
1
S
S
S
G
454L
AYWWG
G
D
D
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case − Steady State
Parameter
RqJC
2.7
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
47
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2016
March, 2016 − Rev. 0
1
Publication Order Number:
NTTFS5C454NL/D
NTTFS5C454NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
22
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25 °C
10
TJ = 125°C
250
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 45 mA
100
mA
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
1.2
2.0
−5.1
VGS = 10 V
ID = 20 A
3.2
3.8
VGS = 4.5 V
ID = 20 A
4.8
6
gFS
VDS = 15 V, ID = 40 A
V
mV/°C
80
mW
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
1600
VGS = 0 V, f = 1 MHz, VDS = 25 V
590
pF
21
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 20 V; ID = 40 A
Total Gate Charge
QG(TOT)
8.2
Threshold Gate Charge
QG(TH)
2
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
2.1
Plateau Voltage
VGP
3.2
td(ON)
9.3
VGS = 4.5 V, VDS = 20 V; ID = 40 A
18
nC
3.8
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 4.5 V, VDS = 20 V,
ID = 40 A, RG = 2.5 W
tf
100
ns
17
4
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
VSD
VGS = 0 V,
IS = 40 A
TJ = 25°C
0.86
TJ = 125°C
0.75
tRR
ta
tb
1.2
V
29
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 40 A
QRR
14
ns
15
200
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTTFS5C454NL
TYPICAL CHARACTERISTICS
80
80
VDS = 10 V
10 V to 3.6 V
70
50
40
2.8 V
30
20
60
50
40
30
TJ = 25°C
20
10
10
0
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
3.2 V
60
0.5
1.0
1.5
2.0
2.5
3.0
TJ = −55°C
2
3
5
4
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
TJ = 25°C
ID = 20 A
18
16
14
12
10
8
6
4
2
3
4
5
6
7
9
8
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
8
TJ = 25°C
7
6
VGS = 4.5 V
5
4
VGS = 10 V
3
2
0
10
20
30
40
50
60
70
80
90 100
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.0
1.E+05
1.9
VGS = 10 V
ID = 20 A
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
−50 −25
0
TJ = 175°C
IDSS, LEAKAGE (A)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
1
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
20
2
TJ = 125°C
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
70
1.E+04
TJ = 125°C
1.E+03
TJ = 85°C
1.E+02
1.E+01
25
50
75
100
125
150
175
5
10
15
20
25
30
35
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
40
NTTFS5C454NL
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
10000
CISS
1000
COSS
100
VGS = 0 V
TJ = 25°C
f = 1 MHz
CRSS
10
0
5
10
15
20
25
30
35
40
10
QT
9
8
7
6
5
QGD
QGS
4
3
VDS = 20 V
ID = 40 A
TJ = 25°C
2
1
0
0
2
4
6
8
10
12
14
18
16
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
100
1000
IS, SOURCE CURRENT (A)
VGS = 0 V
tr
t, TIME (ns)
100
td(off)
tf
10
1
td(on)
VGS = 4.5 V
VDD = 20 V
ID = 40 A
1
10
10
1
0.1
0.01
0.001
100
TJ = 25°C
TJ = −55°C
TJ = 125°C
0.2
0
0.4
0.6
0.8
1.0
1.2
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
500 ms
100
10 ms
10
IPEAK, (A)
ID, DRAIN CURRENT (A)
1 ms
TC = 25°C
VGS ≤ 10 V
Single Pulse
1
TJ (initial) = 100°C
RDS(on) Limit
Thermal Limit
Package Limit
1
0.1
0.1
TJ (initial) = 25°C
10
1
10
1E−4
100
1E−3
VDS (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
1E−2
NTTFS5C454NL
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
RqJA (°C/W)
10
1
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Marking
Package
Shipping†
NTTFS5C454NLTAG
454L
WDFN8
(Pb−Free)
1500 / Tape & Reel
NTTFS5C454NLTWG
454L
WDFN8
(Pb−Free)
5000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTTFS5C454NL
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
0.20 C
D
A
B
D1
2X
0.20 C
8 7 6 5
4X
q
E1 E
c
1 2 3 4
A1
TOP VIEW
0.10 C
A
0.10 C
SIDE VIEW
0.10
8X b
C A B
0.05
C
4X
DETAIL A
6X
C
e
SEATING
PLANE
DETAIL A
8X
e/2
L
0.42
4
INCHES
NOM
0.030
−−−
0.012
0.008
0.130 BSC
0.116
0.120
0.078
0.083
0.130 BSC
0.116
0.120
0.058
0.063
0.009
0.012
0.026 BSC
0.012
0.016
0.026
0.032
0.012
0.017
0.002
0.005
0.055
0.059
0_
−−−
MIN
0.028
0.000
0.009
0.006
0.65
PITCH
PACKAGE
OUTLINE
K
MAX
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.016
0.020
0.037
0.022
0.008
0.063
12 _
4X
0.66
M
E3
8
G
MILLIMETERS
MIN
NOM
MAX
0.70
0.75
0.80
0.00
−−−
0.05
0.23
0.30
0.40
0.15
0.20
0.25
3.30 BSC
2.95
3.05
3.15
1.98
2.11
2.24
3.30 BSC
2.95
3.05
3.15
1.47
1.60
1.73
0.23
0.30
0.40
0.65 BSC
0.30
0.41
0.51
0.65
0.80
0.95
0.30
0.43
0.56
0.06
0.13
0.20
1.40
1.50
1.60
0_
−−−
12 _
SOLDERING FOOTPRINT*
1
E2
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
q
5
D2
BOTTOM VIEW
3.60
L1
0.75
2.30
0.57
0.47
2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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6
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For additional information, please contact your local
Sales Representative
NTTFS5C454NL/D