NVATS5A106PLZ Power MOSFET 40 V, 25 mΩ, 33 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features Low On-Resistance High Current Capability 100% Avalanche Tested AEC-Q101 qualified and PPAP capable ATPAK package is pin-compatible with DPAK (TO-252) Pb-Free, Halogen Free and RoHS compliance www.onsemi.com VDSS 40 V RDS(on) Max 25 mΩ @ 10 V 41 mΩ @ 4.5 V 2,4 1 1 : Gate 2 : Drain 3 : Source 4 : Drain SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Operating Junction and Storage Temperature 33 A ELECTRICAL CONNECTION P-Channel Typical Applications Reverse Battery Protection Load Switch Automotive Front Lighting Automotive Body Controllers Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) PW 10 s, duty cycle 1% Power Dissipation Tc = 25C ID Max Symbol VDSS VGSS ID Value 40 20 33 Unit V V A IDP 100 A PD 48 W 55 to +175 C Tj, Tstg Avalanche Energy (Single Pulse) (Note 2) EAS 30 mJ Avalanche Current (Note 3) IAV 15 A Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 : VDD = 10V, L = 200 H, IAV = 15 A 3 : L ≤ 200 H, Single pulse 3 4 1 2 3 ATPAK MARKING THERMAL RESISTANCE RATINGS Parameter Symbol Value Unit Junction to Case Steady State (Tc = 25C) RJC 3.1 C/W Junction to Ambient (Note 4) RJA 80.5 C/W ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. 2 Note 4 : Surface mounted on FR4 board using a 130 mm , 1 oz. Cu pad. © Semiconductor Components Industries, LLC, 2016 June 2016 - Rev. 0 1 Publication Order Number : NVATS5A106PLZ/D NVATS5A106PLZ ELECTRICAL CHARACTERISTICS at Ta 25C (Note 5) Conditions Value Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS IDSS ID = 1 mA, VGS = 0 V Zero-Gate Voltage Drain Current VDS = 40 V, VGS = 0 V 1 A Gate to Source Leakage Current IGSS VGS = 16 V, VDS = 0 V 10 A Gate Threshold Voltage VGS(th) VDS = 10 V, ID = 1 mA 2.6 V Forward Transconductance gFS VDS = 10 V, ID = 15 A 28 Static Drain to Source On-State Resistance RDS(on)1 RDS(on)2 ID = 15 A, VGS = 10 V 19 25 m 29 41 m Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Rise Time tr Turn-OFF Delay Time td(off) ID = 8 A, VGS = 4.5 V min typ max 40 Unit V 1.2 S 1,380 pF 210 pF Crss 150 pF td(on) 12 ns 120 ns 110 ns VDS = 20 V, f = 1 MHz See Fig.1 Fall Time tf 90 ns Total Gate Charge Qg 29 nC Gate to Source Charge Qgs 6.4 nC Gate to Drain “Miller” Charge Qgd 5.9 nC VDS = 20 V, VGS = 10 V, ID = 30 A VSD IS = 30 A, VGS = 0 V Forward Diode Voltage V 0.97 1.5 Note 5 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Fig.1 Switching Time Test Circuit www.onsemi.com 2 NVATS5A106PLZ www.onsemi.com 3 NVATS5A106PLZ www.onsemi.com 4 NVATS5A106PLZ PACKAGE DIMENSIONS unit : mm DPAK (Single Gauge) / ATPAK CASE 369AM ISSUE O 4 2 3 RECOMMENDED SOLDERING FOOTPRINT 6.5 1 : Gate 2 : Drain 1.5 2 4 : Drain 6.7 3 : Source 1.6 1 2.3 www.onsemi.com 5 2.3 NVATS5A106PLZ ORDERING INFORMATION Device NVATS5A106PLZT4G Marking Package Shipping (Qty / Packing) ATP106 DPAK(Single Gauge) / ATPAK (Pb-Free / Halogen Free) 3,000 / Tape & Reel † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the NVATS5A106PLZ is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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