2N7002E Small Signal MOSFET 60 V, 310 mA, Single, N−Channel, SOT−23 Features • • • • Low RDS(on) Small Footprint Surface Mount Package Trench Technology These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(on) MAX ID MAX (Note 1) 60 V 3.0 W @ 4.5 V 310 mA 2.5 W @ 10 V Applications • • • • Low Side Load Switch Level Shift Circuits DC−DC Converter Portable Applications i.e. DSC, PDA, Cell Phone, etc. Simplified Schematic N−Channel 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol Value Unit Drain−to−Source Voltage Rating VDSS 60 V Gate−to−Source Voltage VGS ±20 V Drain Current (Note 1) Steady State t<5s ID 1 mA TA = 25°C TA = 85°C 260 190 TA = 25°C TA = 85°C 310 220 Power Dissipation (Note 1) Steady State t<5s PD Pulsed Drain Current (tp = 10 ms) IDM 1.2 A Operating Junction and Storage Temperature Range TJ, TSTG −55 to +150 °C 2 (Top View) MARKING DIAGRAM & PIN ASSIGNMENT mW 3 300 420 Drain 3 Source Current (Body Diode) IS 300 mA Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1 703 MG G 2 SOT−23 CASE 318 STYLE 21 1 2 Gate Source 703 = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Junction−to−Ambient − Steady State (Note 1) RqJA 417 °C/W Junction−to−Ambient − t ≤ 5 s (Note 1) RqJA 300 April, 2016 − Rev. 4 Device 2N7002ET1G 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) © Semiconductor Components Industries, LLC, 2016 ORDERING INFORMATION 1 Package Shipping† SOT−23 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: 2N7002E/D 2N7002E ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Units OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS 75 VGS = 0 V, VDS = 60 V mV/°C TJ = 25°C 1 TJ = 125°C 500 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA Gate−to−Source Leakage Current V mA ±100 nA 2.5 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) Forward Transconductance gFS 1.0 4.4 mV/°C VGS = 10 V, ID = 240 mA 0.86 2.5 VGS = 4.5 V, ID = 50 mA 1.1 3.0 VDS = 5 V, ID = 200 mA 530 W mS CHARGES AND CAPACITANCES CISS Input Capacitance 26.7 VGS = 0 V, f = 1 MHz, VDS = 25 V Output Capacitance COSS Reverse Transfer Capacitance CRSS 2.9 Total Gate Charge QG(TOT) 0.81 Threshold Gate Charge QG(TH) 0.31 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD VGS = 5 V, VDS = 10 V; ID = 240 mA 40 pF 4.6 nC 0.48 0.08 SWITCHING CHARACTERISTICS, VGS = V (Note 3) Turn−On Delay Time td(ON) Rise Time Turn−Off Delay Time tr td(OFF) Fall Time ns 1.7 VGS = 10 V, VDD = 30 V, ID = 200 mA, RG = 10 W tf 1.2 4.8 3.6 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 200 mA TJ = 25°C 0.79 TJ = 85°C 0.7 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2% 3. Switching characteristics are independent of operating junction temperatures www.onsemi.com 2 2N7002E TYPICAL CHARACTERISTICS 4.0 V 1.2 3.5 V 0.8 3.0 V 0.4 2.5 V 2.0 V 0 2 4 TJ = 25°C 0.4 6 TJ = 125°C 0 TJ = −55°C 2 4 6 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 2.4 VGS = 4.5 V TJ = 125°C 2.0 TJ = 85°C 1.6 TJ = 25°C 1.2 TJ = −55°C 0.8 0.4 0 0 0.8 0 0.2 0.4 0.6 0.8 1.0 1.2 2.4 VGS = 10 V 2.0 TJ = 125°C 1.6 TJ = 85°C 1.2 TJ = 25°C 0.8 TJ = −55°C 0.4 0 0 0.2 0.4 0.6 0.8 1.0 1.2 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Drain Current and Temperature Figure 4. On−Resistance vs. Drain Current and Temperature 1.6 2.2 ID = 0.2 A RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 4.5 V 9.0 V 8.0 V 7.0 V 6.0 V 1.6 1.2 5.0 V VGS = 10 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 2.0 ID = 250 mA 1.2 ID = 75 mA 0.8 0.4 2 4 6 8 1.8 VGS = 4.5 V 1.0 0.6 −50 10 VGS = 10 V 1.4 −25 0 25 50 75 100 125 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 5. On−Resistance vs. Gate−to−Source Voltage Figure 6. On−Resistance Variation with Temperature www.onsemi.com 3 150 2N7002E TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 40 TJ = 25°C VGS = 0 V Ciss 30 20 Coss 10 Crss 0 0 4 8 12 16 TJ = 25°C ID = 0.25 A 4 3 2 1 0 20 0 0.2 0.4 0.6 0.8 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge VGS(th) , THRESHOLD VOLTAGE (NORMALIZED) GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) 10 VGS = 0 V IS, SOURCE CURRENT (A) 5 1 TJ = 85°C TJ = 25°C 0.1 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -60 VSD, SOURCE−TO−DRAIN VOLTAGE (V) -20 20 60 T, TEMPERATURE (°C) 100 Figure 10. Temperature versus Gate Threshold Voltage Figure 9. Diode Forward Voltage vs. Current www.onsemi.com 4 1 140 2N7002E PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 b 0.25 e q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 ° STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN L1 VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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