2N7002E Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 60 3 @ VGS = 10 V 240 FEATURES D D D D D BENEFITS Low On-Resistance: 3 W Low Threshold: 2 V (typ) Low Input Capacitance: 25 pF Fast Switching Speed: 7.5 ns Low Input and Output Leakage D D D D D APPLICATIONS Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays TO-236 (SOT-23) Marking Code: 7Ewl G 1 3 S E = Part Number Code for 2N7002E w = Week Code l = Lot Traceability D 2 Top View Ordering Information: 2N7002E-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) TA = 25_C TA = 70_C Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range ID IDM TA = 25_C TA = 70_C PD Unit V 240 190 mA 1300 0.35 0.22 W RthJA 357 _C/W TJ, Tstg -55 to 150 _C Notes a. Pulse width limited by maximum junction temperature. Document Number: 70860 S-31987—Rev. D, 13-Oct-03 www.vishay.com 1 2N7002E Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Symbol Test Conditions Min Typa V(BR)DSS VGS = 0 V, ID = 10 mA 60 68 VGS(th) VDS = VGS, ID = 250 mA 1 2 Gate-Body Leakage IGSS VDS = 0 V, VGS = "15 V "10 Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TC = 125_C 500 On State Drain Currentb On-State ID(on) D( ) Parameter Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Drain Source On Drain-Source On-Resistance Resistanceb Forward Transconductanceb Diode Forward Voltage VGS = 10 V, VDS = 7.5 V 800 1300 VGS = 4.5 V, VDS = 10 V 500 700 2.5 nA mA mA VGS = 10 V, ID = 250 mA 1.2 3 VGS = 4.5 V, ID = 200 mA 1.8 4 gfs VDS = 15 V, ID = 200 mA 600 VSD IS = 200 mA, VGS = 0 V 0.85 1.2 0.4 0.6 VDS = 10 V, VGS = 4.5 V ID ^ 250 mA 0.06 rDS(on) DS( ) V W mS V Dynamica Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss nC 0.06 21 VDS = 5 V, VGS = 0 V, f = 1 MHz 7 pF 2.5 Switchinga, c Turn-On Time ton Turn-Off Time toff VDD = 10 V, RL = 40 W ID ^ 250 mA, mA VGEN = 10V RG = 10 W 13 20 18 25 ns Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. www.vishay.com 2 Document Number: 70860 S-31987—Rev. D, 13-Oct-03 2N7002E Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics 1.0 VGS = 10, 9, 8, 7, 6 V TJ = -55_C 5V 0.8 0.9 0.6 ID - Drain Current (A) ID - Drain Current (A) Transfer Characteristics 1.2 4V 0.4 0.2 25_C 125_C 0.6 0.3 3V 0.0 0.0 0 1 2 3 4 5 0 1 VDS - Drain-to-Source Voltage (V) 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-Source Voltage 4 2 On-Resistance vs. Drain Current 3.5 rDS(on) - On-Resistance ( Ω ) rDS(on) - On-Resistance ( Ω ) 3.0 3 ID @ 250 mA 2 ID @ 75 mA 1 2.5 VGS = 4.5 V 2.0 VGS = 10 V 1.5 1.0 0.5 0 0 2 4 6 8 0.0 0.0 10 0.2 0.4 On-Resistance vs. Junction Temperature 0.4 1.0 Threshold Voltage Variance Over Temperature 0.2 ID = 250 mA 1.2 VGS(th) - Variance (V) rDS(on) - On-Resistance ( Ω ) (Normalized) VGS = 10 V @ 250 mA 1.6 VGS = 4.5 V @ 200 mA 0.8 0.4 0.0 -50 0.8 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) 2.0 0.6 -0.0 -0.2 -0.4 -0.6 -25 0 25 50 75 100 TJ - Junction Temperature (_C) Document Number: 70860 S-31987—Rev. D, 13-Oct-03 125 150 -0.8 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 2N7002E Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Capacitance 40 Gate Charge 1.0 VDS = 30 V ID = 0.25 A Ciss C - Capacitance (pF) 0.8 VGS - Gate-to-Source Voltage (V) 32 24 16 Coss 8 Crss 0.6 0.4 0.2 0 0 5 10 15 20 0.0 0.0 25 0.1 VDS - Drain-to-Source Voltage (V) 0.2 0.3 0.4 0.5 Qg - Total Gate Charge (nC) Source-Drain Diode Forward Voltage 2 IS - Source Current (A) 1 TJ = 85_C 25_C -55_C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) www.vishay.com 4 Document Number: 70860 S-31987—Rev. D, 13-Oct-03 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1