2SK4094 Ordering number : ENA0523 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4094 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Load switching applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 Gate-to-Source Voltage VGSS ±20 V ID 100 A Drain Current (DC) Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% V 400 A 1.75 W Allowable Power Dissipation PD 90 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS 850 mJ Avalanche Current *2 IAV 70 A Tc=25°C Note : *1 VDD=30V, L=200µH, IAV=70A *2 L≤200µH, Single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Marking : K4094 Symbol V(BR)DSS Conditions Ratings min typ ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±16V, VDS=0V 60 VGS(off) yfs VDS=10V, ID=1mA VDS=10V, ID=50A 1.2 RDS(on)1 RDS(on)2 ID=50A, VGS=10V ID=50A, VGS=4V IDSS IGSS Unit max V ±10 µA µA 2.6 V 3.8 5.0 mΩ 4.9 7.0 mΩ 1 45 75 S Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N0806QA SY IM TC-00000295 No. A0523-1/5 2SK4094 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 12500 Output Capacitance 1200 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 950 pF Turn-ON Delay Time td(on) See specified Test Circuit. 80 ns Rise Time tr td(off) See specified Test Circuit. 630 ns See specified Test Circuit. 860 ns tf See specified Test Circuit. 750 ns Qg VDS=30V, VGS=10V, ID=100A 220 nC Gate-to-Source Charge Qgs nC Qgd VDS=30V, VGS=10V, ID=100A VDS=30V, VGS=10V, ID=100A 30 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=100A, VGS=0V 1.0 Turn-OFF Delay Time Fall Time Total Gate Charge 55 nC 1.2 V Package Dimensions unit : mm (typ) 7507-002 4.5 10.2 3.6 (5.6) 18.0 15.1 2.7 1.3 6.3 5.1 0.8 14.0 1.2 0.4 1 2 3 2.7 1 : Gate 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220 Switching Time Test Circuit Avalanche Resistance Test Circuit VDD=30V VIN 10V 0V L ID=50A RL=0.6Ω VIN D ≥50Ω VOUT PW=10µs D.C.≤1% 2SK4094 10V 0V G 50Ω VDD 2SK4094 P.G 50Ω S No. A0523-2/5 2SK4094 40 20 20 0.8 1.0 1.2 1.4 1.6 2.0 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 14 12 10 25°C 6 Tc=75°C 4 --25°C 2 2 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 10 2 -25 =Tc 10 7 5 °C °C 75° C 3 7 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A V 50 =10 I D= VGS , A 50 I D= 4 3 2 1 0 --25 25 100 7 5 3 2 150 IT11559 1.0 7 5 3 2 0.2 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V 1.4 IT11435 Ciss, Coss, Crss -- VDS f=1MHz 2 Ciss, Coss, Crss -- pF 3 2 tr 10k 7 5 3 2 Coss Crss 1k td(on) 7 7 5 0.1 125 Ciss tf 100 100 10 7 5 3 2 3 1000 5 75 IS -- VSD td(off) 7 50 VGS=0V Single pulse 0 VDD=30V VGS=10V 2 4.5 IT11431 4V S= 5 5 7 100 IT11434 SW Time -- ID 3 4.0 VG A, 6 0.1 7 5 3 2 0.01 2 1.0 7 0.1 3.5 8 3 2 Source Current, IS -- A 25 3 3.0 Case Temperature, Tc -- °C VDS=10V Single pulse 100 7 5 2.5 9 IT11558 yfs -- ID 2.0 RDS(on) -- Tc 0 --50 0 1 1.5 Single pulse 16 8 1.0 Gate-to-Source Voltage, VGS -- V 10 ID=50A Single pulse 18 0.5 IT11430 RDS(on) -- VGS 20 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 1.8 --25°C 0.6 °C 25°C 0.4 Tc=7 5 0.2 Drain-to-Source Voltage, VDS -- V 2 75°C 0 0 Forward Transfer Admittance, yfs -- S 60 40 0 Switching Time, SW Time -- ns 80 25° C 60 100 C VGS=3V 80 120 25° 100 140 Tc= -- Drain Current, ID -- A 120 3 Tc=75° C --25° C 6V 10 140 VDS=10V Single pulse 180 160 V 160 Drain Current, ID -- A Tc=25°C Single pulse 4V 8V 180 ID -- VGS 200 25° C ID -- VDS 200 5 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 100 IT10473 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT10474 No. A0523-3/5 2SK4094 VGS -- Qg 10 VDS=30V ID=100A 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 2 1 0 0 50 100 150 200 10 7 5 3 2 PD -- Ta 1.5 1.0 0.5 10 0µ s s µs Operation in this area is limited by RDS(on). 1.0 7 5 3 2 Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT10960 PD -- Tc 100 1.75 10 1m Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 1 10 DC 00m ms op s era tio n ID=100A 100 7 5 3 2 IT10475 0 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT11548 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT10483 EAS -- Ta 120 Avalanche Energy derating factor -- % ≤10µs IDP=400A 0.1 0.1 250 Total Gate Charge, Qg -- nC 2.0 ASO 1000 7 5 3 2 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT11439 No. A0523-4/5 2SK4094 Note on usage : Since the 2SK4094 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2006. Specifications and information herein are subject to change without notice. PS No. A0523-5/5