2SK4094 Ordering number : ENA0523A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4094 General-Purpose Switching Device Applications Features • • • ON-resistance RDS(on)1=3.8mΩ (typ.) Input capacitance Ciss=12500pF (typ.) 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Unit 60 PW≤10μs, duty cycle≤1% V ±20 V 100 A 400 A 1.75 W Allowable Power Dissipation PD 90 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 850 mJ 70 A Avalanche Current *2 Tc=25°C Note : *1 VDD=30V, L=200μH, IAV=70A (Fig.1) *2 L≤200μH, single pulse Package Dimensions Product & Package Information unit : mm (typ) 7536-001 • Package : TO-220-3L • JEITA, JEDEC : SC-46, TO-220AB • Minimum Packing Quantity : 50 pcs./magazine 4.5 3.6 2.8 1.3 (1.7) 10.0 Marking 1.3 Electrical Connection 2 8.9 MAX 13.3 15.7 (0.6) 9.2 K4094 LOT No. 1 1.27 0.8 13.08 3.0 1.52 0.5 3 2.4 1 2 3 2.54 1 : Gate 2 : Drain 3 : Source 2.54 SANYO : TO-220-3L http://semicon.sanyo.com/en/network 12512 TKIM TC-00002699/N0806QA SYIM TC-00000295 No. A0523-1/5 2SK4094 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS min typ Unit max 60 ID=1mA, VGS=0V VDS=60V, VGS=0V V 1 μA ±10 μA Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=16V, VDS=0V VDS=10V, ID=1mA 1.2 Forward Transfer Admittance | yfs | VDS=10V, ID=50A 45 RDS(on)1 ID=50A, VGS=10V 3.8 5.0 mΩ RDS(on)2 ID=50A, VGS=4V 4.9 7.0 mΩ Static Drain-to-Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss 2.6 V 75 VDS=20V, f=1MHz S 12500 pF 1200 pF Reverse Transfer Capacitance Crss 950 pF Turn-ON Delay Time td(on) 80 ns Rise Time tr 630 ns Turn-OFF Delay Time td(off) 860 ns Fall Time tf 750 ns Total Gate Charge Qg 220 nC Gate-to-Source Charge Qgs 30 nC Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD See Fig.2 VDS=30V, VGS=10V, ID=100A 55 IS=100A, VGS=0V Fig.1 Avalanche Resistance Test Circuit 1.2 V Fig.2 Switching Time Test Circuit 10V 0V L VDD=30V VIN ≥50Ω ID=50A RL=0.6Ω VIN 2SK4094 10V 0V nC 1.0 VDD 50Ω D PW=10μs D.C.≤1% VOUT G 2SK4094 P.G VGS=3V 60 100 80 60 40 40 20 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Drain-to-Source Voltage, VDS -- V 1.8 2.0 IT11430 0 0 0.5 1.0 1.5 2.0 2.5 75°C 80 120 25° C 100 140 Tc= --25 °C Drain Current, ID -- A 120 0 Tc=75° C --25° C 6V 10 140 VDS=10V Single pulse 180 160 V 160 Drain Current, ID -- A 4V 8V 180 ID -- VGS 200 Tc=25°C Single pulse S 25° C ID -- VDS 200 50Ω 3.0 3.5 4.0 Gate-to-Source Voltage, VGS -- V 4.5 IT11431 No. A0523-2/5 2SK4094 RDS(on) -- VGS 14 12 10 25°C 6 Tc=75°C 4 --25°C 2 1 2 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 2 = Tc 10 7 5 5°C --2 C 75° 3 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 2 1 --25 0 25 50 2 tr 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0 0.2 0.4 0.6 5 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 f=1MHz Drain Current, ID -- A 6 5 4 3 2 1 100 5 3 2 1000 7 5 3 2 7 50 7 Coss Crss 150 Total Gate Charge, Qg -- nC 200 250 IT10475 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V VDS=30V ID=100A 0 1.4 IT11435 10k 5 5 7 100 IT10473 8 0 1.2 7 VGS -- Qg 9 1.0 Ciss, Coss, Crss -- VDS 1k Drain Current, ID -- A 10 0.8 2 td(on) 7 150 IT11559 IS -- VSD 3 Ciss, Coss, Crss -- pF 3 100 125 Ciss tf 5 100 VGS=0V Single pulse td(off) 1000 7 75 Diode Forward Voltage, VSD -- V VDD=30V VGS=10V 2 Switching Time, SW Time -- ns 5 7 100 IT11434 SW Time -- ID 3 3 0.1 7 5 3 2 0.01 2 1.0 7 0.1 4 3 2 °C 25 3 5 Case Temperature, Tc -- °C Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 100 7 5 50A I D= , V =4 50A V GS I D= , V =10 V GS 6 0 --50 10 VDS=10V Single pulse 2 7 IT11558 | yfs | -- ID 3 8 °C 25°C 8 9 --25°C 16 0 Gate-to-Source Voltage, VGS -- V Single pulse Tc=7 5 18 RDS(on) -- Tc 10 ID=50A Single pulse Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 20 ASO IDP=400A 10 7 5 3 2 1.0 7 5 3 2 1m s 1 10 DC 00m ms s op era tio n ID=100A 100 7 5 3 2 30 IT10474 ≤10μs 1 0μ s 10 0μ s Operation in this area is limited by RDS(on). Tc=25°C Single pulse 0.1 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V 3 5 7 100 IT10960 No. A0523-3/5 2SK4094 PD -- Ta 1.75 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C Avalanche Energy derating factor -- % 160 IT11548 EAS -- Ta 120 PD -- Tc 100 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 2.0 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT10483 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT11439 No. A0523-4/5 2SK4094 Note on usage : Since the 2SK4094 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of January, 2012. Specifications and information herein are subject to change without notice. PS No. A0523-5/5