Ordering number : ENA1458A ATP405 N-Channel Power MOSFET http://onsemi.com 100V, 40A, 33mΩ, ATPAK Features • • ON-resistance RDS(on)=25mΩ (typ.) 10V drive • • Input capacitance Ciss=4000pF (typ.) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit 100 V ±20 V Allowable Power Dissipation ID IDP PD 70 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 148 mJ 40 A Drain Current (Pulse) Avalanche Current *2 PW≤10μs, duty cycle≤1% Tc=25°C 40 A 160 A Note : *1 VDD=30V, L=100μH, IAV=40A *2 L≤100μH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7057-001 • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ATP405-TL-H 1.5 6.5 0.4 0.4 0.5 4 Packing Type: TL 4.6 2.6 Marking ATP405 TL 6.05 4.6 9.5 7.3 LOT No. Electrical Connection 3 0.6 0.4 2.3 0.1 2.3 0.55 0.7 0.5 1 0.8 1.7 2,4 2 Semiconductor Components Industries, LLC, 2013 July, 2013 1 : Gate 2 : Drain 3 : Source 4 : Drain ATPAK 1 3 62712 TKIM/42209QA MSIM TC-00001943 No. A1458-1/7 ATP405 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS ID=1mA, VGS=0V VDS=100V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source On-State Resistance RDS(on) ID=20A, VGS=10V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Rise Time Turn-OFF Delay Time min typ Unit max 100 V 2.0 VDS=10V, ID=20A 10 μA ±10 μA 3.5 62 V S 25 33 mΩ 4000 pF 300 pF Crss 170 pF td(on) tr 38 ns 125 ns 220 ns Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=20V, f=1MHz See specified Test Circuit. VDS=60V, VGS=10V, ID=40A Switching Time Test Circuit 10V 0V Ratings Conditions 150 ns 68 nC 14 nC 15 IS=40A, VGS=0V nC 0.9 1.2 V Avalanche Resistance Test Circuit VDD=60V VIN L ID=20A RL=3Ω VIN D PW=10μs D.C.≤1% ≥50Ω VOUT ATP405 10V 0V G VDD 50Ω ATP405 P.G 50Ω S Ordering Information Device ATP405-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1458-2/7 ATP405 ID -- VDS V 20 1.5 2.0 2.5 Tc=75°C 30 25°C 20 --25°C 10 2 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 2 C 5° -2 =- 10 Tc 7 5 °C 75 3 2 1.0 7 5 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 tf 7 tr 5 20 10 0 --25 25 50 75 100 125 td(on) 3 150 IT14607 IS -- VSD VGS=0V Single pulse 0 0.2 0.4 0.6 0.8 1.0 1.2 IT14609 Ciss, Coss, Crss -- VDS f=1MHz 5 2 100 = V GS 30 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- pF 3 5.0 IT14605 7 td(off) 4.5 =2 , ID 10V 10000 VDD=60V VGS=10V 7 4.0 0A 40 IT14608 SW Time -- ID 1000 3.5 50 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 5 7 100 Drain Current, ID -- A 3.0 60 Source Current, IS -- A °C 25 2.5 Case Temperature, Tc -- °C VDS=10V 3 2.0 Single pulse 0 --50 10 100 7 5 1.5 RDS(on) -- Tc IT14606 | yfs | -- ID 2 1.0 Cutoff Voltage, VGS(off) -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 50 40 0.5 70 ID=20A Single pulse 60 0 IT14604 RDS(on) -- VGS 70 0 3.0 25°C 1.0 5°C 0.5 Tc= 7 0 Drain-to-Source Voltage, VDS -- V Forward Transfer Admittance, | yfs | -- S 20 10 10 Switching Time, SW Time -- ns 30 5°C VGS=4.0V 40 C 30 50 --25 ° 40 60 Tc= 7 .0 V Drain Current, ID -- A 4.5V 25 °C 6.0 10 Drain Current, ID -- A 8 60 0 5°C 75 ° C 25°C 70 .0V 50 Tc= -2 VDS=10V 70 0 ID -- VGS(off) 80 Tc=25°C --25° C 80 Ciss 3 2 1000 7 5 Coss 3 2 Crss 2 10 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 IT14610 100 7 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT14611 No. A1458-3/7 ATP405 VGS -- Qg 10 VDS=60V ID=40A 7 6 5 3 1 0 0 10 20 30 40 50 60 Total Gate Charge, Qg -- nC PD -- Tc 80 60 50 40 30 20 10 0 20 40 60 80 100 0m 10 7 5 3 2 s 1.0 7 5 3 2 Operation in this area is limited by RDS(on). 2 3 120 Case Temperature, Tc -- °C 140 160 IT14602 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V EAS -- Ta 120 70 0 ms 10 IT14612 Avalanche Energy derating factor -- % Allowable Power Dissipation, PD -- W 80 70 ID=40A 0.1 7 5 3 Tc=25°C 2 Single pulse 0.01 0.01 2 3 5 7 0.1 2 10 μs 0μ s 10 10 n tio era op 4 PW≤10μs s 1m Drain Current, ID -- A 8 IDP=160A 100 7 5 3 2 DC Gate-to-Source Voltage, VGS -- V 9 ASO 5 3 2 5 7100 2 IT14613 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT14603 No. A1458-4/7 ATP405 Taping Specification ATP405-TL-H No. A1458-5/7 ATP405 Outline Drawing ATP405-TL-H Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No. A1458-6/7 ATP405 Note on usage : Since the ATP405 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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