FDS8984_F085 N-Channel PowerTrench® MOSFET tm 30V, 7A, 23mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Max rDS(on) = 23mΩ, VGS = 10V, ID = 7A Max rDS(on) = 30mΩ, VGS = 4.5V, ID = 6A Low gate charge 100% RG tested Qualified to AEC Q101 RoHS Compliant DD2 DD2 D1 D 5 DD1 SO-8 Pin 1 SO-8 4 Q2 6 G2 S2 G G1 S S1 S 3 2 7 Q1 8 S 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current Continuous ID Ratings 30 Units V ±20 V 7 A (Note 1a) Pulsed EAS PD TJ, TSTG Single Pulse Avalache Energy (Note 2) 30 A 32 mJ Power Dissipation for Single Operation 1.6 W Derate above 25°C 13 mW/°C -55 to 150 °C (Note 1a) 78 °C/W (Note 1) 40 °C/W Operating and Storage Temperature Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking FDS8984 Device FDS8984_F085 ©2010 Fairchild Semiconductor Corporation FDS8984_F085 Rev. A Package SO-8 Reel Size 330mm 1 Tape Width 12mm Quantity 2500 units www.fairchildsemi.com FDS8984_F085 N-Channel PowerTrench® MOSFET Fabruary 2010 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 24V VGS = 0V IGSS Gate to Source Leakage Current VGS = ±20V,VDS = 0V 30 V 23 mV/°C 1 TJ = 125°C 250 µA ±100 nA 2.5 V On Characteristics (Note 3) VGS(th) Gate to Source Threshold Voltage VDS = VGS, ID = 250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C VGS = 10V, ID = 7A 19 23 Drain to Source On Resistance VGS = 4.5V, ID = 6A 24 30 VGS = 10V, ID = 7A, TJ = 125°C 26 32 rDS(on) 1.2 1.7 - 4.3 mV/°C mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance VDS = 15V, VGS = 0V, f = 1.0MHz 475 635 pF 100 135 pF 65 100 pF f = 1MHz 0.9 1.6 Ω 5 10 ns 9 18 ns 42 68 ns 21 34 ns 9.2 13 nC 5.0 7 nC Switching Characteristics (Note 3) td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 15V, ID = 7A VGS = 10V, RGS = 33Ω VDS = 15V, VGS = 10V, ID = 7A VDS = 15V, VGS = 5V, ID = 7A 1.5 nC 2.0 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge ISD = 7A 0.9 1.25 V ISD = 2.1A 0.8 1.0 V IF = 7A, di/dt = 100A/µs 33 ns 20 nC Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design. a) 78°C/W when mounted on a 0.5in2 pad of 2 oz copper b) 125°C/W when mounted on a 0.02 in2 pad of oz copper c) 135°C/W when mounted on a minimun pad Scale 1 : 1 on letter size paper 2: Starting TJ = 25°C, L = 1mH, IAS = 8A, VDD = 27V, VGS = 10V. 3: Pulse Test:Pulse Width <300µs, Duty Cycle <2%. FDS8984_F085 Rev. A 2 www.fairchildsemi.com FDS8984_F085 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted RDS(ON), NORMALIZED ID, DRAIN CURRENT (A) VGS=10V PULSE DURATION =80µS DUTY CYCLE =0.5% MAX VGS=5.0V VGS=3.5V 20 VGS=4.5V VGS=4.0V 10 VGS=3.0V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Figure 1. On Region Characteristics RDS(on), DRAIN TO SOURCE ON-RESISTANCE (mOHM) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID = 7A VGS = 10V 1.2 1.0 0.8 -40 0 40 80 120 PULSE DURATION =80µS DUTY CYCLE =0.5% MAX 2.5 VGS=3.0V 2.0 VGS=3.5V VGS=4.0V 1.5 1.0 VGS=5.0V 0.5 5 160 Figure 3. On Resistance vs Temperature IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) O TJ = 150 C 15 O TJ = 25 C 10 5 0 O TJ = - 55 C 1 2 3 VGS, GATE TO SOURCE VOLTAGE (V) 4 25 30 50 45 40 TJ = 125oC 35 30 25 20 15 TJ = 25oC 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 10 1 VGS = 0V TJ = 150oC TJ = 25oC 0.1 TJ = -55oC 0.01 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics FDS8984_F085 Rev. A 20 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX ID = 7A 55 30 VDD = 5V 20 15 Figure 4. On-Resistance vs Gate to Source Votlage PULSE DURATION =80µS DUTY CYCLE =0.5% MAX 25 10 VGS=10V 60 TJ, JUNCTION TEMPERATURE (oC) 30 VGS=4.5V Figure 2. On-Resistance vs Drain Current and Gate Voltage 1.6 0.6 -80 3.0 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 1.4 DRAIN-SOURCE ON-RESISTANCE 30 = 25°C unless otherwise noted Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDS8984_F085 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 700 VGS, GATE TO SOURCE VOLTAGE(V) 10 600 CISS VDD = 15V VDD = 10V 6 4 CAPACITANCE (pF) 8 VDD = 20V 2 500 f = 1MHz VGS = 0V 400 COSS 300 200 100 0 0 2 4 6 Qg, GATE CHARGE(nC) 8 10 CRSS 0.1 Figure 7. Gate Charge Characteristics 10 30 Figure 8. Capacitance vs Drain to Source Voltage 8 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 20 10 O STARTING TJ = 25 C O STARTING TJ = 125 C 1 0.01 0.1 7 6 VGS=10V 5 4 VGS=4.5V 3 2 1 1 10 0 25 20 P(PK), PEAK TRANSIENT POWER (W) 10us 0.1 0.01 0.1 100us 1ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 10ms 100ms 1s SINGLE PULSE TJ = MAX RATED TA = 25oC DC 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 11. Forward Bias Safe Operating Area FDS8984_F085 Rev. A 100 125 150 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 100 1 75 TA, AMBIENT TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 10 50 o tAV, TIME IN AVALANCHE (mS) ID, DRAIN CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) 3000 TA = 25oC 1000 FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 100 150 – T A -----------------------125 I = I25 VGS=10V 10 SINGLE PULSE 1 -5 10 -4 10 -3 10 -2 -1 0 1 10 10 10 10 t, PULSE WIDTH (s) 2 10 3 10 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDS8984_F085 N-Channel PowerTrench® MOSFET Typical Characteristics TJ Normalized Thermal Impedance ZθJA 2 1 0.1 = 25°C unless otherwise noted DUTY CYCLE - DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 1E-3 1E-4 -5 10 t2 SINGLE PULSE -4 10 -3 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA -2 -1 10 10 0 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION(s) Figure 13. Transient Thermal Response Curve FDS8984_F085 Rev. A 5 www.fairchildsemi.com FDS8984_F085 N-Channel PowerTrench® MOSFET Typical Characteristics TJ tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I47 FDS8984_F085 Rev. A 6 www.fairchildsemi.com FDS8984_F085 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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