FDPF320N06L N-Channel PowerTrench® MOSFET 60V, 21A, 25mΩ Features Description • RDS(on) = 20mΩ ( Typ.)@ VGS = 10V, ID = 21A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • RDS(on) = 23mΩ ( Typ.)@ VGS = 5V, ID = 17A • Low Gate Charge ( Typ. 23.2nC) • Low Crss ( Typ. 64pF) • Fast Switching Application • 100% Avalanche Tested • DC to DC converters / Synchronous Rectification • Improved dv/dt Capability • RoHS Compliant D G GC E TO-220F (Retractable) S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage - Pulsed Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL V 15 - Continuous (TC = 100oC) Drain Current ±20 21 Drain Current IDM Units V - Continuous (TC = 25oC) ID EAS FDPF320N06L 60 - Derate above 25oC A (Note 1) 84 A (Note 2) 66 mJ (Note 3) 6.0 V/ns 26 W 0.17 W/oC -55 to +175 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDPF320N06L RθJC Thermal Resistance, Junction to Case 5.8 RθJA Thermal Resistance, Junction to Ambient 62.5 ©2010 Fairchild Semiconductor Corporation FDPF320N06L Rev. A4 1 Units oC/W www.fairchildsemi.com FDPF320N06L N-Channel PowerTrench® MOSFET December 2010 Device Marking FDPF320N06L Device FDPF320N06L Package TO-220F Reel Size - Tape Width - Quantity 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units 60 - - V - 0.04 - V/oC μA Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250μA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS = 48V, VGS = 0V - - 1 VDS = 48V, TC = 150oC - - 500 IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 VGS = VDS, ID = 250μA 1.0 - 2.5 V - 20 25 mΩ ID = 250μA, Referenced to 25oC μA On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10V, ID = 21A VGS = 5V, ID = 17A VDS = 10V, ID = 21A (Note 4) - 23 38 mΩ - 34 - S - 1105 1470 pF - 115 150 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V VGS = 10V VGS = 5V Qg(tot) Total Gate Charge at 5V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 48V ID = 21A - 64 - pF - 23.2 30.2 nC - 12.7 16.5 nC - 3.4 - nC - 6.3 - nC - 16 42 ns - 34 78 ns - 27 64 ns - 8 26 ns - 2 - Ω Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time ESR Equivalent Series Resistance (G-S) VDD = 30V, ID = 21A VGS = 5V, RGEN = 4.7Ω (Note 4, 5) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 21 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 84 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 21A - - 1.3 V trr Reverse Recovery Time - 27 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 21A, VDD = 48V dIF/dt = 100A/μs (Note 4) - 23 - nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1mH, IAS = 11.5A, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 21A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Dual Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDPF320N06L Rev. A4 2 www.fairchildsemi.com FDPF320N06L N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 200 100 VGS = 15.0V 10.0V 8.0V 5.0V 4.0V 3.5V 3.0V ID, Drain Current[A] ID, Drain Current[A] 100 *Notes: 1. VDS = 10V 2. 250μs Pulse Test 10 o 175 C o 10 25 C o -55 C *Notes: 1. 250μs Pulse Test o 2. TC = 25 C 2 0.1 1 1 VDS, Drain-Source Voltage[V] 1 4 2 3 4 VGS, Gate-Source Voltage[V] 0.04 100 IS, Reverse Drain Current [A] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature RDS(ON) [Ω], Drain-Source On-Resistance Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.03 VGS = 10V 0.02 VGS = 20V o 175 C *Notes: 1. VGS = 0V *Note: TC = 25 C 0.01 0 20 40 60 ID, Drain Current [A] 80 1 0.0 100 o 25 C 10 o 2. 250μs Pulse Test 0.5 1.0 VSD, Body Diode Forward Voltage [V] 1.5 Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 4000 10 1000 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Capacitances [pF] 5 Ciss Coss Crss *Note: 1. VGS = 0V 2. f = 1MHz 100 40 0.1 FDPF320N06L Rev. A4 VDS = 12V VDS = 30V VDS = 48V 8 6 4 2 *Note: ID = 21A 0 1 10 VDS, Drain-Source Voltage [V] 0 60 3 4 8 12 16 20 Qg, Total Gate Charge [nC] 24 www.fairchildsemi.com FDPF320N06L N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250μA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 21A 0.5 0.0 -100 200 Figure 9. Maximum Safe Operating Area vs. Case Temperature -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current 300 24 100μs ID, Drain Current [A] ID, Drain Current [A] 100 10 1 1ms 10ms 100ms DC Operation in This Area is Limited by R DS(on) 18 VGS = 10 V 12 VGS = 5 V *Notes: 0.1 6 o 1. TC = 25 C o 0.01 0.1 2. TJ = 175 C 3. Single Pulse o RθJC = 5.8 C/W 1 10 VDS, Drain-Source Voltage [V] 0 25 100 50 75 100 125 o 150 175 TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] 8 0.5 1 0.2 0.1 t1 0.02 0.1 t2 0.01 *Notes: o 1. ZθJC(t) = 5.8 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.01 -5 10 FDPF320N06L Rev. A4 PDM 0.05 -4 10 -3 -2 -1 10 10 10 1 Rectangular Pulse Duration [sec] 4 10 100 www.fairchildsemi.com FDPF320N06L N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDPF320N06L N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDPF320N06L Rev. A4 5 www.fairchildsemi.com FDPF320N06L N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FDPF320N06L Rev. A4 6 www.fairchildsemi.com FDPF320N06L N-Channel PowerTrench® MOSFET Package Dimensions TO-220F * Front/Back Side Isolation Voltage : AC 2500V Dimensions in Millimeters FDPF320N06L Rev. A4 7 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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