2SK4087LS Ordering number : ENA0555B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4087LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Symbol IDc*1 Drain Current (DC) IDpack*2 Drain Current (Pulse) Conditions Ratings VDSS VGSS IDP Unit 600 V ±30 V Limited only by maximum temperature 14 A Tc=25°C (SANYO’s ideal heat dissipation condition)*3 9.2 A PW≤10µs, duty cycle≤1% 52 A 2.0 W Allowable Power Dissipation PD 40 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *4 EAS 117 mJ Avalanche Current *5 IAV 14 A Tc=25°C (SANYO’s ideal heat dissipation condition)*3 *1 Shows chip capability *2 Package limited *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=99V, L=1mH, IAV=14A *5 L≤1mH, single pulse Marking : K4087 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O1007 TI IM TC-00000930 / 40407QB TI IM TC-00000630 / 22107QB TI IM TC-00000371 No. A0555-1/5 2SK4087LS Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS IGSS Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance min ID=10mA, VGS=0V VDS=480V, VGS=0V VGS(off) ⏐yfs⏐ VGS=±30V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=7A RDS(on) Ciss ID=7A, VGS=10V VDS=30V, f=1MHz Coss VDS=30V, f=1MHz VDS=30V, f=1MHz Output Capacitance Ratings Conditions typ Unit max 600 V 100 µA ±100 nA 5 V 0.61 Ω 3 4 8 S 0.47 1200 pF 220 pF Reverse Transfer Capacitance Crss 50 pF Turn-ON Delay Time td(on) tr See specified Test Circuit. 27 ns See specified Test Circuit. 72 ns td(off) tf See specified Test Circuit. 144 ns See specified Test Circuit. 48 ns 46 nC 8.6 nC 26.4 0.95 Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=200V, VGS=10V, ID=14A VDS=200V, VGS=10V, ID=14A VDS=200V, VGS=10V, ID=14A Diode Forward Voltage VSD IS=14A, VGS=0V nC 1.3 V Package Dimensions unit : mm (typ) 7509-002 4.5 10.0 2.8 0.6 16.1 16.0 7.2 3.5 3.2 1.2 14.0 3.6 0.9 1.2 0.75 0.7 1 : Gate 2 : Drain 3 : Source 2.4 1 2 3 2.55 SANYO : TO-220FI(LS) 2.55 Switching Time Test Circuit VIN Avalanche Resistance Test Circuit L VDD=200V 10V 0V ≥50Ω RG ID=7A RL=28.6Ω VIN D VOUT PW=10µs D.C.≤0.5% 2SK4087LS 10V 0V 50Ω VDD G 2SK4087LS P.G RGS=50Ω S No. A0555-2/5 2SK4087LS ID -- VDS 35 Tc=25°C VDS=20V 10V 30 8V 15V Tc= --25°C 35 Drain Current, ID -- A Drain Current, ID -- A ID -- VGS 40 25 20 15 10 6V 5 30 25°C 25 75°C 20 15 10 5 VGS=5V 0 0 0 5 10 15 20 25 30 Drain-to-Source Voltage, VDS -- V 0 4 6 8 10 12 14 16 18 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 2.0 2 IT11753 20 IT11754 RDS(on) -- Tc 1.4 ID=7A Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 1.6 1.4 1.2 1.0 Tc=75°C 25°C --25°C 0.2 5 7 9 11 13 Gate-to-Source Voltage, VGS -- V 2 5 C 5° = Tc 3 --2 75 °C 2 1.0 7 2 3 5 7 1.0 2 3 5 7 10 2 Drain Current, ID -- A 3 100 125 150 IT11756 3 2 1.0 7 5 3 2 0.1 7 5 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V 1.4 IT11758 Ciss, Coss, Crss -- VDS 10000 7 5 VDD=200V VGS=10V 5 75 10 7 5 IT11757 7 50 VGS=0V 0.01 0.2 5 SW Time -- ID 1000 25 IS -- VSD 3 2 5 3 0.1 0 3 2 5°C 7 --25 5 Source Current, IS -- A Forward Transfer Admittance, ⏐yfs⏐ -- S 10 0.2 Case Temperature, Tc -- °C VDS=10V 2 0.4 IT11755 ⏐yfs⏐ -- ID 3 f=1MHz 3 3 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 15 V V =7 ID 0.6 0 --50 0 3 A, 0 =1 GS --25°C 0.4 0.8 °C 0.6 1.0 25°C 0.8 1.2 Tc=7 5 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 1.8 td (off) 2 100 7 tf tr 5 td(on) 3 2 Ciss 1000 7 5 Coss 3 2 100 7 5 Crss 3 2 2 10 0.1 10 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 IT11759 0 5 10 15 20 25 30 35 40 Drain-to-Source Voltage, VDS -- V 45 50 IT11760 No. A0555-3/5 2SK4087LS VGS -- Qg 10 VDS=200V ID=14A 100 7 5 3 2 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 1 0 10 20 30 40 50 Total Gate Charge, Qg -- nC DC 1.0 7 5 3 2 2.0 1.5 1.0 0.5 1m 10 IDpack(*2)=9.2A ms 10 0µ µs s s 0m s op era tio Operation in this area is limited by RDS(on). n *1. Shows chip capability *2. SANYO’s ideal heat dissipation condition 2 3 5 7 10 2 3 5 7 100 2 3 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 10 7 5 3 2 10 10 5 7 1k IT11762 PD -- Tc 45 40 35 30 25 20 15 10 5 0 0 0 20 40 80 60 100 120 140 Ambient Temperature, Ta -- °C 160 IT11730 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT11742 EAS -- Ta 120 Avalanche Energy derating factor -- % PW<10µs IDc(*1)=14A IT11761 PD -- Ta 2.5 IDP=52A 0.1 7 5 3 2 Tc=25°C Single pulse 0.01 0.1 2 3 5 7 1.0 2 0 ASO 2 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A0555-4/5 2SK4087LS Note on usage : Since the 2SK4087LS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2007. Specifications and information herein are subject to change without notice. PS No. A0555-5/5