MBR60H100CT, MBRB60H100CT SWITCHMODE™ Power Rectifier 100 V, 60 A http://onsemi.com Features and Benefits • • • • • • SCHOTTKY BARRIER RECTIFIER 60 AMPERES, 100 VOLTS Low Forward Voltage: 0.72 V @ 125°C Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 60 A Total (30 A Per Diode Leg) Pb−Free Package is Available 1 2, 4 3 Applications • Power Supply − Output Rectification • Power Management • Instrumentation MARKING DIAGRAM 4 Mechanical Characteristics: TO−220AB CASE 221A PLASTIC • Case: Epoxy, Molded • Epoxy Meets UL 94 V−0 @ 0.125 in • Weight (Approximately): 1.9 Grams (TO−220) • • • 1 1.7 Grams (D2PAK) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds ESD Rating: Human Body Model = 3B Machine Model = C 2 3 4 Please See the Table on the Following Page D2PAK CASE 418B STYLE 3 1 AYWW B60H100G AKA 3 A Y WW B60H100 G AKA MAXIMUM RATINGS AYWW B60H100G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Polarity Designator ORDERING INFORMATION Package Shipping† TO−220 50 Units/Rail MBR60H100CTG TO−220 (Pb−Free) 50 Units/Rail MBRB60H100CTT4G D2PAK (Pb−Free) 800/ Tape & Reel Device MBR60H100CT †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2008 June, 2008 − Rev. 3 1 Publication Order Number: MBR60H100CT/D MBR60H100CT, MBRB60H100CT MAXIMUM RATINGS (Per Diode Leg) Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 V Average Rectified Forward Current (TC = 155°C) Per Diode Per Device IF(AV) Peak Repetitive Forward Current (Square Wave, 20 kHz, TC = 151°C) IFRM 60 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 350 A Operating Junction Temperature (Note 1) TJ +175 °C Storage Temperature Tstg *65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms 400 mJ > 400 > 8000 V Rating Controlled Avalanche Energy (see test conditions in Figures 9 and 10) A 30 60 WAVAL ESD Ratings: Machine Model = C Human Body Model = 3B Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit RqJC RqJA 1.0 70 °C/W Maximum Thermal Resistance − Junction−to−Case (Min. Pad) − Junction−to−Ambient (Min. Pad) ELECTRICAL CHARACTERISTICS (Per Diode Leg) Symbol Characteristic Maximum Instantaneous Forward Voltage (Note 2) (iF = 30 A, TJ = 25°C) (iF = 30 A, TJ = 125°C) (iF = 60 A, TJ = 25°C) (iF = 60 A, TJ = 125°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TJ = 125°C) (Rated DC Voltage, TJ = 25°C) iR 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 Min Typ Max − − − − 0.80 0.68 0.93 0.81 0.84 0.72 0.98 0.84 − − 2.0 0.0013 10 0.01 Unit V mA 175°C 10 TJ = 150°C 125°C 1.0 25°C 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.0 25°C 0.1 0.0 0.1 0.2 0.3 0.4 0.5 IR, MAXIMUM REVERSE CURRENT (AMPS) TJ = 125°C TJ = 25°C 1E−06 1E−07 1E−08 0 20 40 60 80 100 1E−01 0.6 0.7 0.8 0.9 1.0 1.1 TJ = 125°C 1E−03 1E−04 1E−05 TJ = 25°C 1E−06 1E−07 1E−08 0 20 40 60 80 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current SQUARE WAVE 32 28 24 20 16 12 F (AV) 8.0 135 TJ = 150°C VR, REVERSE VOLTAGE (VOLTS) dc 140 145 150 155 160 165 170 175 180 26 24 22 20 18 16 14 12 10 8.0 6.0 4.0 2.0 0 100 RATED VOLTAGE APPLIED RqJA = 16° C/W RqJA = 70° C/W (NO HEATSINK) dc SQUARE WAVE dc 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C°) TA, AMBIENT TEMPERATURE (°C) Figure 5. Current Derating, Case Per Leg Figure 6. Current Derating, Ambient Per Leg http://onsemi.com 3 1.2 1E−02 , AVERAGE FORWARD CURRENT (AMPS) IR, REVERSE CURRENT (AMPS) TJ = 150°C 1E−05 , AVERAGE FORWARD CURRENT (AMPS) 125°C Figure 2. Maximum Forward Voltage 1E−04 F (AV) TJ = 150°C Figure 1. Typical Forward Voltage 1E−03 4.0 0 130 175°C 10 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 1E−02 48 44 40 36 100 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 1E−01 I i , INSTANTANEOUS FORWARD CURRENT (AMPS F 100 I i , INSTANTANEOUS FORWARD CURRENT (AMPS F MBR60H100CT, MBRB60H100CT 175 60 56 52 48 44 40 36 32 28 24 20 16 12 8 4 0 10000 TJ = 25°C TJ = 175°C SQUARE WAVE dc C, CAPACITANCE (pF) P , AVERAGE FORWARD POWER DISSIPATION (WATTS F (AV) MBR60H100CT, MBRB60H100CT 1000 100 10 0 4 8 12 16 20 24 28 32 36 40 44 48 52 56 60 0 IF(AV), AVERAGE FORWARD CURRENT (AMPS) 20 40 60 80 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Forward Power Dissipation Figure 8. Capacitance http://onsemi.com 4 100 MBR60H100CT, MBRB60H100CT +VDD IL 10 mH COIL BVDUT VD MERCURY SWITCH ID ID IL DUT S1 VDD t0 Figure 9. Test Circuit t1 t2 t Figure 10. Current−Voltage Waveforms elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). The unclamped inductive switching circuit shown in Figure 9 was used to demonstrate the controlled avalanche capability of this device. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite component resistances. Assuming the component resistive EQUATION (1): ǒ BV 2 DUT W [ 1 LI LPK AVAL 2 V BV DUT DD EQUATION (2): 2 W [ 1 LI LPK AVAL 2 http://onsemi.com 5 Ǔ MBR60H100CT, MBRB60H100CT PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E V W −B− 4 1 2 3 A S −T− SEATING PLANE K J G D 3 PL 0.13 (0.005) VARIABLE CONFIGURATION ZONE W H M T B M N R P L L M M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT* 8.38 0.33 1.016 0.04 10.66 0.42 17.02 0.67 5.08 0.20 3.05 0.12 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE U L M DIM A B C D E F G H J K L M N P R S V MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 MBR60H100CT, MBRB60H100CT PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AF −T− B F SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 ANODE CATHODE ANODE CATHODE SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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