C106 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. Features • • • • • • Glassivated Surface for Reliability and Uniformity Power Rated at Economical Prices Practical Level Triggering and Holding Characteristics Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability Sensitive Gate Triggering These are Pb−Free Devices http://onsemi.com SCRs 4 A RMS, 200 − 600 Volts G A K MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Characteristic Symbol Peak Repetitive Off−State Voltage (Note 1) (Sine Wave, 50−60 Hz, RGK = 1 kW, TC = −40° to 110°C) C106B C106D, C106D1* C106M, C106M1* VDRM, VRRM On-State RMS Current (180° Conduction Angles, TC = 80°C) IT(RMS) 4.0 A Average On−State Current (180° Conduction Angles, TC = 80°C) IT(AV) 2.55 A Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = +25°C) ITSM 20 A I2t 1.65 A2s Forward Peak Gate Power (Pulse Width v1.0 msec, TC = 80°C) PGM 0.5 W Forward Average Gate Power (Pulse Width v1.0 msec, TC = 80°C) PG(AV) 0.1 W Forward Peak Gate Current (Pulse Width v1.0 msec, TC = 80°C) IGM 0.2 A Operating Junction Temperature Range TJ −40 to +110 °C Storage Temperature Range Tstg −40 to +150 °C − 6.0 in. lb. Circuit Fusing Considerations (t = 8.3 ms) Mounting Torque (Note 2) Max Unit V 200 400 600 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Anode lead and heatsink contact pad are common. © Semiconductor Components Industries, LLC, 2011 September, 2011 − Rev. 10 1 TO−225AA CASE 077 STYLE 2 MARKING DIAGRAM & PIN ASSIGNMENT 1. Cathode 2. Anode 3. Gate Y WW C106xx xx G YWW C106xxG = Year = Work Week = Device Code = B, D, D1, M, M1 = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: C106/D C106 Series THERMAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 3.0 °C/W Thermal Resistance, Junction−to−Ambient RqJA 75 °C/W TL 260 °C Maximum Lead Temperature for Soldering Purposes 1/8 in. from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit − − − − 10 100 mA mA − − 2.2 V − − 15 35 200 500 − − 6.0 0.4 0.5 0.60 0.75 0.8 1.0 0.2 − − − − 0.20 0.35 5.0 7.0 − − − 0.19 0.33 0.07 3.0 6.0 2.0 − 8.0 − OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, RGK = 1 kW) TJ = 25°C TJ = 110°C IDRM, IRRM ON CHARACTERISTICS VTM Peak Forward On−State Voltage (Note 3) (ITM = 4 A) Gate Trigger Current (Continuous dc) (Note 4) (VAK = 6 Vdc, RL = 100 W) TJ = 25°C TJ = −40°C IGT VGRM Peak Reverse Gate Voltage (IGR = 10 mA) Gate Trigger Voltage (Continuous dc) (Note 4) (VAK = 6 Vdc, RL = 100 W) TJ = 25°C TJ = −40°C Gate Non−Trigger Voltage (Continuous dc) (Note 4) (VAK = 12 V, RL = 100 W, TJ = 110°C) VGT VGD Latching Current (VAK = 12 V, IG = 20 mA, RGK = 1 kW) TJ = 25°C TJ = −40°C Holding Current (VD = 12 Vdc) (Initiating Current = 20 mA, RGK = 1 kW) TJ = 25°C TJ = −40°C TJ = +110°C IL IH mA V V V mA mA DYNAMIC CHARACTERISTICS dv/dt Critical Rate−of−Rise of Off−State Voltage (VAK = Rated VDRM, Exponential Waveform, RGK = 1 kW, TJ = 110°C) 3. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. 4. RGK is not included in measurement. http://onsemi.com 2 V/ms C106 Series Voltage Current Characteristic of SCR + Current Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak On State Voltage IH Holding Current Anode + VTM on state IH IRRM at VRRM + Voltage IDRM at VDRM Reverse Blocking Region (off state) Forward Blocking Region (off state) Reverse Avalanche Region Anode − 110 TC, CASE TEMPERATURE ( °C) 100 90 DC 80 70 60 50 HALF SINE WAVE RESISTIVE OR INDUCTIVE LOAD. 50 to 400 Hz 40 30 20 10 0 .4 .8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 IT(AV) AVERAGE ON‐STATE CURRENT (AMPERES) Figure 1. Average Current Derating P(AV), AVERAGE ON‐STATE POWER DISSIPATION (WATTS) 10 JUNCTION TEMPERATURE ≈ 110°C 8 HALF SINE WAVE RESISTIVE OR INDUCTIVE LOAD 50 TO 400Hz. 6 DC 4 2 0 0 .4 1.2 1.6 2.0 2.4 2.6 3.2 3.6 IT(AV) AVERAGE ON‐STATE CURRENT (AMPERES) Figure 2. Maximum On−State Power Dissipation http://onsemi.com 3 .8 4.0 C106 Series 1000 IH, HOLDING CURRENT ( m A) IGT, GATE TRIGGER CURRENT ( mA) 100 10 1 -40 -25 -10 5 20 35 50 65 80 95 10 -40 -25 110 -10 5 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 3. Typical Gate Trigger Current versus Junction Temperature Figure 4. Typical Holding Current versus Junction Temperature 1.0 110 1000 0.9 I L , LATCHING CURRENT (m A) VGT , GATE TRIGGER VOLTAGE (V) 100 0.8 0.7 0.6 0.5 0.4 100 0.3 0.2 -45 -25 -10 5 20 35 50 65 80 95 110 10 -40 -25 -10 5 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Gate Trigger Voltage versus Junction Temperature Figure 6. Typical Latching Current versus Junction Temperature http://onsemi.com 4 110 C106 Series PACKAGE INTERCHANGEABILITY The dimensional diagrams below compare the critical dimensions of the ON Semiconductor C-106 package with competitive devices. It has been demonstrated that the smaller dimensions of the ON Semiconductor package make it compatible in most lead-mount and chassis-mount applications. The user is advised to compare all critical dimensions for mounting compatibility. .295 ____ .305 .145 ____ .155 .115 ____ .130 .148 ____ .158 .425 ____ .435 .400 ____ .360 .095 ____ .105 .385 ____ .365 .575 ____ .655 .040 .094 BSC .025 ____ .035 .026 ____ .019 .520 ____ .480 5_ TYP 1 2 3 .050 ____ .095 .020 ____ .026 .127 ____ DIA .123 .135 ____ .115 .315 ____ .285 .420 ____ .400 .105 ____ .095 .105 ____ .095 .015 ____ .025 .054 ____ .046 .045 ____ .055 ON Semiconductor C-106 Package .190 ____ .170 Competitive C-106 Package ORDERING INFORMATION Package Shipping† C106BG TO−225AA (Pb−Free) 500 Units / Box C106DG TO−225AA (Pb−Free) 500 Units / Box C106D1G* TO−225AA (Pb−Free) 500 Units / Box C106MG TO−225AA (Pb−Free) 500 Units / Box C106M1G* TO−225AA (Pb−Free) 500 Units / Box Device *D1 signifies European equivalent for D suffix and M1 signifies European equivalent for M suffix. http://onsemi.com 5 C106 Series PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE Z −B− U F Q −A− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077-01 THRU -08 OBSOLETE, NEW STANDARD 077-09. C M 1 2 3 H DIM A B C D F G H J K M Q R S U V K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- STYLE 2: PIN 1. CATHODE 2. ANODE 3. GATE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative C106/D