High-reliability discrete products and engineering services since 1977 C106 SERIES SILICON CONTROLLED RECTIFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Symbol Peak repetitive forward and reverse blocking voltage(1) (RGK = 1kΩ, TJ = -40 to +110°C) C106Q C106Y C106F C106A C106B C106C C106D C106E C106M Value Unit 15 30 50 100 200 300 400 500 600 VRRM, VDRM Volts Forward current RMS (all conduction angles) IT(RMS) 4 Amps Average forward current (TA = 30°C) IT(AV) 2.55 Amps Peak non-repetitive surge current (1/2 cycle, 60Hz, TJ = -40 to +110°C) ITSM Circuit fusing considerations (t = 8.3ms) I2t Amps 20 A2s 1.65 Peak gate power PGM 0.5 Watts Average gate power PG(AV) 0.1 Watts Forward peak gate current IGFM 0.2 Amps Peak reverse gate voltage VGRM 6 Volts Operating junction temperature range TJ -40 to +110 °C Storage temperature range Tstg -40 to +150 °C 6 In. lb. Mounting torque (2) Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Note 2: Torque rating applies with use of compression washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Anode lead and heatsink contact pad are common. Soldering temperature shall not exceed 200°C. For optimum results, an activated flux is recommended. THERMAL CHARACTERISTICS Characteristic Symbol Maximum Unit Thermal resistance, junction to case RӨJC 3 °C/W Thermal resistance, junction to ambient RӨJA 75 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) Characteristic Symbol Peak forward or reverse blocking current (VAK = rated VDRM or VRRM, RGK = 1kΩ) TJ = 25°C TJ = 110°C IDRM, IRRM Min. Typ. Max. - - 10 100 Unit µA Rev. 20130118 High-reliability discrete products and engineering services since 1977 Characteristic C106 SERIES SILICON CONTROLLED RECTIFIERS Symbol Forward “on” voltage (IFM = 1A peak) VTM Gate trigger current (continuous dc) (VAK = 6Vdc, RL = 100Ω) (VAK = 6Vdc, RL = 100Ω, T C = -40°C) IGT Gate trigger voltage (continuous dc) (VAK = 6Vdc, RL = 100Ω) (VAK = 6Vdc, RL = 100Ω, T C = -40°C) VGT Holding current (VD = 12Vdc, RGK = 1kΩ) TJ = 25°C TJ = -40°C TJ = 110°C Forward voltage application rate (TJ = 110°C, RGK = 1000Ω, V D = rated VDRM) IH dv/dt Min. Typ. Max. Unit - - 2.2 - 30 75 200 500 µA 0.4 0.5 0.60 0.75 0.8 1.0 Volts 0.3 0.4 0.14 - 3 6 2 mA - 8 - Volts V/µs Turn-on time tgt - 1.2 - µs Turn-off time tq - 40 - µs MECHANICAL CHARACTERISTICS Case: TO-126 Marking: Body painted, alpha-numeric Polarity: Cathode band TO-126 A B C D F G H J K M Q R S U V Inches Min Max 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.125 0.091 0.097 0.050 0.095 0.015 0.025 0.595 0.655 3° TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 - Millimeters Min Max 10.80 11.050 7.490 7.750 2.410 2.670 0.510 0.660 2.920 3.180 2.310 2.460 1.270 2.410 0.380 0.640 15.110 16.640 3° TYP 3.760 4.010 1.140 1.400 0.640 0.890 3.680 3.940 1.020 Rev. 20130118 High-reliability discrete products and engineering services since 1977 C106 SERIES SILICON CONTROLLED RECTIFIERS Rev. 20130118