MCR106-6, MCR106-8 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume consumer applications such as temperature, light and speed control; process and remote control, and warning systems where reliability of operation is important. http://onsemi.com Features • • • • • SCRs 4 AMPERES RMS 400 thru 600 VOLTS Glass-Passivated Surface for Reliability and Uniformity Power Rated at Economical Prices Practical Level Triggering and Holding Characteristics Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability Pb−Free Packages are Available* G A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 110°C, Sine Wave 50 to 60 MCR106−6 Hz, RGK = 1 kW) MCR106−8 VDRM, VRRM On-State RMS Current, (TC = 93°C) (180° Conduction Angles) IT(RMS) 4.0 A Average On−State Current, (180° Conduction Angles; TC = 93°C) IT(AV) 2.55 A Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C) ITSM 25 A Circuit Fusing Considerations, (t = 8.3 ms) I2t 2.6 A2s PGM 0.5 W PG(AV) 0.1 W Forward Peak Gate Current, (TC = 93°C, Pulse Width v 1.0 ms) IGM 0.2 A Peak Reverse Gate Voltage, (TC = 93°C, Pulse Width v 1.0 ms) VRGM 6.0 V Forward Peak Gate Power, (TC = 93°C, Pulse Width v 1.0 ms) Forward Average Gate Power, (TC = 93°C, t = 8.3 ms) Value Unit V 400 600 Operating Junction Temperature Range TJ −40 to +110 °C Storage Temperature Range Tstg −40 to +150 °C Mounting Torque (Note 2) − 6.0 in. lb. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. Torque rating applies with use of compression washer (B52200-F006 or equivalent). Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Anode lead and heatsink contact pad are common. (See AN209B). For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200°C. For optimum results, an activated flux (oxide removing) is recommended. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2008 November, 2008 − Rev. 5 K 1 3 2 1 TO−225AA CASE 77 STYLE 2 MARKING DIAGRAM YWW CR 106−xG Y = Year WW = Work Week CR106−x = Device Code x = 6 or 8 G = Pb−Free Package PIN ASSIGNMENT 1 Cathode 2 Anode 3 Gate ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MCR106/D MCR106−6, MCR106−8 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 3.0 °C/W Thermal Resistance, Junction−to−Ambient RqJA 75 °C/W TL 260 °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit − − − − 10 200 mA mA − − 2.0 V − − − − 200 500 OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM; RGK = 1 kW) TJ = 25°C TJ = 110°C IDRM, IRRM ON CHARACTERISTICS Peak Forward On−State Voltage (Note 3) (ITM = 4 A Peak) VTM Gate Trigger Current (Continuous dc) (Note 4) (VAK = 7 Vdc, RL = 100 W) (TC = −40°C) IGT Gate Trigger Voltage (Continuous dc) (Note 4) (VAK = 7 Vdc, RL = 100 W) VGT − − 1.0 V Gate Non-Trigger Voltage (Note 4) (VAK = 12 Vdc, RL = 100 W, TJ = 110°C) VGD 0.2 − − V IH − − 5.0 mA dv/dt − 10 − V/ms Holding Current (VAK = 7 Vdc, Initiating Current = 200 mA, RGK = 1 kW) mA DYNAMIC CHARACTERISTICS Critical Rate−of−Rise of Off−State Voltage (TJ = 110°C, RGK = 1 kW) 3. Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%. 4. RGK current is not included in measurement. ORDERING INFORMATION Package Shipping MCR106−6 Device TO−225AA 500 Units / Box MCR106−6G TO−225AA (Pb−Free) 500 Units / Box MCR106−8 TO−225AA 500 Units / Box MCR106−8G TO−225AA (Pb−Free) 500 Units / Box http://onsemi.com 2 MCR106−6, MCR106−8 Voltage Current Characteristic of SCR + Current Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak On State Voltage IH Holding Current Anode + VTM on state IH IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region + Voltage IDRM at VDRM Forward Blocking Region (off state) Anode − 110 110 106 102 0 98 α π f = 60 Hz 94 90 α = 30° dc 60° 90° 120° 180° 86 82 TA , MAXIMUM ALLOWABLE AMBIENTTEMPERATURE ( °C) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C) CURRENT DERATING 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 IT(AV), AVERAGE FORWARD CURRENT (AMP) 3.6 4.0 90 0 70 α π f = 60 Hz 50 α = 30° 30 0 Figure 1. Maximum Case Temperature 0.1 60° 90° 180° dc 0.2 0.3 0.4 0.5 0.6 0.7 IT(AV), AVERAGE FORWARD CURRENT (AMP) Figure 2. Maximum Ambient Temperature http://onsemi.com 3 0.8 MCR106−6, MCR106−8 PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE Z −B− U F Q −A− C M 1 2 3 H DIM A B C D F G H J K M Q R S U V K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077-01 THRU -08 OBSOLETE, NEW STANDARD 077-09. INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- M STYLE 2: PIN 1. CATHODE 2. ANODE 3. GATE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 4 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MCR106/D