MCR16NG Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half−wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half−wave, silicon gate−controlled devices are needed. www.onsemi.com Features • • • • • • • • SCRs 16 AMPERES RMS 800 VOLTS Blocking Voltage to 800 Volts On−State Current Rating of 16 Amperes RMS High Surge Current Capability − 160 Amperes Rugged Economical TO−220AB Package Glass Passivated Junctions for Reliability and Uniformity Minimum and Maximum Values of IGT, VGT, and IH Specified for Ease of Design High Immunity to dv/dt − 100 V/msec Minimum at 125°C These are Pb−Free Devices* G A K MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR16NG VDRM, VRRM On-State RMS Current (180° Conduction Angles; TC = 80°C) IT(RMS) 16 ITSM 160 A I2t 106 A2sec PGM 5.0 W PG(AV) 0.5 W IGM 2.0 A Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 ms) Forward Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C) Forward Average Gate Power (t = 8.3 ms, TC = 80°C) Forward Peak Gate Current (Pulse Width ≤ 1.0 ms, TC = 80°C) Value Unit AY WW MCR16NG AKA V 800 A Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 1 2 TO−220AB CASE 221A−09 STYLE 3 3 A Y WW G AKA = Assembly Location = Year = Work Week = Pb−Free Package = Diode Polarity PIN ASSIGNMENT 1 Cathode 2 Anode 3 Gate 4 Anode ORDERING INFORMATION Device MCR16NG Package Shipping TO−220AB (Pb−Free) 50 Units / Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 5 1 Publication Order Number: MCR16/D MCR16NG THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Symbol Value Unit RqJC RqJA 1.5 62.5 °C/W TL 260 °C Junction−to−Case Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit IDRM, IRRM − − − − 0.01 2.0 mA Peak Forward On−State Voltage (Note 2) (ITM = 32 A) VTM − − 1.7 V Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W) IGT 2.0 10 20 mA Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W) VGT 0.5 0.65 1.0 V Hold Current (Anode Voltage = 12 V, Initiating Current = 200 mA, Gate Open) IH 4.0 25 40 mA Latch Current (VD = 12 V, Ig = 200 mA) IL − 30 60 mA Critical Rate of Rise of Off−State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) dv/dt 100 300 − V/ms Critical Rate of Rise of On−State Current (IPK = 50 A, Pw = 30 ms, diG/dt = 1 A/msec, Igt = 50 mA) di/dt − − 50 A/ms OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C TJ = 125°C ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Indicates Pulse Test: Pulse Width v 2.0 ms, Duty Cycle v 2%. Voltage Current Characteristic of SCR + Current Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak On State Voltage IH Holding Current Anode + VTM on state IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region Anode − www.onsemi.com 2 IH + Voltage IDRM at VDRM Forward Blocking Region (off state) MCR16NG P(AV), AVERAGE POWER DISSIPATION (WATTS) TC, CASE TEMPERATURE (° C) 130 α 120 α = CONDUCTION ANGLE 110 100 90 dc α = 30° 80 0 2 4 6 60° 90° 8 10 180° 12 14 180° α 24 90° α = CONDUCTION ANGLE 60° dc α = 30° 16 8 0 0 16 2 4 6 8 10 12 14 IT(RMS), ITRMS ON-STATE CURRENT (AMPS) IT(AV), AVERAGE ON-STATE CURRENT (AMPS) Figure 1. Typical RMS Current Derating Figure 2. On State Power Dissipation R(t) TRANSIENT THERMAL R (NORMALIZED) 100 Typical @ TJ = 25°C Maximum @ TJ = 125°C 10 16 1 ZqJC(t) = RqJC(t) ⋅ r(t) 0.1 0.01 0.1 1 10 100 1⋅104 1000 t, TIME (ms) Maximum @ TJ = 25°C Figure 4. Transient Thermal Response 100 1 IH, HOLDING CURRENT (mA) I T , INSTANTANEOUS ON-STATE CURRENT (AMPS) 32 10 1 0.1 0.5 0.9 1.3 1.7 2.1 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) -40 -25 -10 2.5 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Holding Current versus Junction Temperature Figure 3. Typical On−State Characteristics www.onsemi.com 3 MCR16NG 30 GATE TRIGGER CURRENT (mA) IL , LATCHING CURRENT (mA) 100 10 1 20 15 10 5 0 -40 -25 -10 5 20 35 50 65 80 95 110 125 -40 -25 -10 5 20 35 50 80 65 95 110 125 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 6. Typical Latching Current versus Junction Temperature Figure 7. Typical Gate Trigger Current versus Junction Temperature 160 I TSM , PEAK SURGE CURRENT (AMP) 1.0 V GT, GATE TRIGGER VOLTAGE (VOLTS) 25 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 -40 -25 -10 5 20 35 50 65 80 95 1 Cycle 150 140 130 120 110 TJ = 125°C f = 60 Hz 100 90 110 125 1 2 3 4 5 6 7 8 TJ, JUNCTION TEMPERATURE (°C) NUMBER OF CYCLES Figure 8. Typical Gate Trigger Voltage versus Junction Temperature Figure 9. Maximum Non−Repetitive Surge Current www.onsemi.com 4 9 10 MCR16NG PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. G D INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 N STYLE 3: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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