MCR218 SERIES.aspx?ext=

High-reliability discrete products
and engineering services since 1977
MCR218 SERIES
SILICON CONTROLLED RECTIFIERS
FEATURES


Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS.
Rating
Symbol
Peak repetitive off-state voltage(1)
(TJ = -40 to +125°C, gate open)
MCR218-2
MCR218-3
MCR218-4
MCR218-6
MCR218-7
MCR218-8
MCR218-10
VDRM
VRRM
On-state RMS current (180° conduction angles, TC = 70°C)
IT(RMS)
Peak non-repetitive surge current
(one half-cycle, sine wave, 60Hz, TJ = 125°C)
ITSM
Circuit fusing consideration (t = 8.3ms)
I2t
Forward peak gate power (pulse width ≤ 1.0µs, T C = 70°C)
Forward average gate power (t = 8.3ms, TC = 70°C)
Value
Unit
50
100
200
400
500
600
800
V
8.0
A
A
100
26
A2s
PGM
5
W
PG(AV)
0.5
W
Forward peak gate current (pulse width ≤ 1.0µs, TC = 70°C)
IGM
2.0
A
Operating temperature range
TJ
-40 to +125
°C
Tstg
-40 to +150
°C
Storage temperature range
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the
anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Maximum lead temperature for soldering purposes
1/8” from case for 10s
Symbol
Maximum
Unit
RӨJC
2.0
°C/W
TL
260
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
-
-
10
2.0
µA
mA
-
1.5
1.8
-
10
25
-
-
1.5
OFF CHARACTERISTICS
Peak forward or reverse blocking current
(VAK = Rated VDRM or VRRM, gate open)
TJ = 25°C
TJ = 125°C
IDRM,
IRRM
ON CHARACTERISTICS
Peak on-state voltage*
(ITM = 16A peak)
VTM
Gate trigger current (continuous dc)
(VD = 12V, RL = 100Ω)
IGT
Gate trigger voltage (continuous dc)
(VD = 12V, RL = 100Ω)
VGT
V
mA
V
Rev. 20130115
High-reliability discrete products
and engineering services since 1977
Gate non-trigger voltage
(Rated 12V, RL = 100Ω, TJ = 125°C)
Holding current
(VD = 12V, initiating current = 200mA, gate open)
MCR218 SERIES
SILICON CONTROLLED RECTIFIERS
VGD
IH
0.2
-
-
-
16
30
-
100
-
V
mA
DYNAMIC CHARACTERISTICS
Critical rate of rise of off-state voltage
(VD = rated VDRM, exponential waveform, gate open, TJ = 125°C)
dv/dt
V/µs
* Pulse width ≤ 1.0ms, duty cycle ≤ 2%.
MECHANICAL CHARACTERISTICS
Case:
TO-220AB
Marking:
Body painted, alpha-numeric
Pin out:
See below
Rev. 20130115
High-reliability discrete products
and engineering services since 1977
MCR218 SERIES
SILICON CONTROLLED RECTIFIERS
Rev. 20130115