High-reliability discrete products and engineering services since 1977 MCR218 SERIES SILICON CONTROLLED RECTIFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS. Rating Symbol Peak repetitive off-state voltage(1) (TJ = -40 to +125°C, gate open) MCR218-2 MCR218-3 MCR218-4 MCR218-6 MCR218-7 MCR218-8 MCR218-10 VDRM VRRM On-state RMS current (180° conduction angles, TC = 70°C) IT(RMS) Peak non-repetitive surge current (one half-cycle, sine wave, 60Hz, TJ = 125°C) ITSM Circuit fusing consideration (t = 8.3ms) I2t Forward peak gate power (pulse width ≤ 1.0µs, T C = 70°C) Forward average gate power (t = 8.3ms, TC = 70°C) Value Unit 50 100 200 400 500 600 800 V 8.0 A A 100 26 A2s PGM 5 W PG(AV) 0.5 W Forward peak gate current (pulse width ≤ 1.0µs, TC = 70°C) IGM 2.0 A Operating temperature range TJ -40 to +125 °C Tstg -40 to +150 °C Storage temperature range Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Characteristic Thermal resistance, junction to case Maximum lead temperature for soldering purposes 1/8” from case for 10s Symbol Maximum Unit RӨJC 2.0 °C/W TL 260 °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) Characteristic Symbol Min Typ Max Unit - - 10 2.0 µA mA - 1.5 1.8 - 10 25 - - 1.5 OFF CHARACTERISTICS Peak forward or reverse blocking current (VAK = Rated VDRM or VRRM, gate open) TJ = 25°C TJ = 125°C IDRM, IRRM ON CHARACTERISTICS Peak on-state voltage* (ITM = 16A peak) VTM Gate trigger current (continuous dc) (VD = 12V, RL = 100Ω) IGT Gate trigger voltage (continuous dc) (VD = 12V, RL = 100Ω) VGT V mA V Rev. 20130115 High-reliability discrete products and engineering services since 1977 Gate non-trigger voltage (Rated 12V, RL = 100Ω, TJ = 125°C) Holding current (VD = 12V, initiating current = 200mA, gate open) MCR218 SERIES SILICON CONTROLLED RECTIFIERS VGD IH 0.2 - - - 16 30 - 100 - V mA DYNAMIC CHARACTERISTICS Critical rate of rise of off-state voltage (VD = rated VDRM, exponential waveform, gate open, TJ = 125°C) dv/dt V/µs * Pulse width ≤ 1.0ms, duty cycle ≤ 2%. MECHANICAL CHARACTERISTICS Case: TO-220AB Marking: Body painted, alpha-numeric Pin out: See below Rev. 20130115 High-reliability discrete products and engineering services since 1977 MCR218 SERIES SILICON CONTROLLED RECTIFIERS Rev. 20130115