BAS116TT1G Switching Diode Features • • • • Low Leakage Current Applications Medium Speed Switching Times Available in 8 mm Tape and Reel These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com 3 CATHODE 1 ANODE MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Continuous Reverse Voltage VR 75 V Peak Forward Current IF 200 mA IFM(surge) 500 mA Rating Peak Forward Surge Current Total Device Dissipation, FR−4 Board (Note 1) TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation, FR−4 Board (Note 2) TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) Junction and Storage Temperature Range 3 1 THERMAL CHARACTERISTICS Characteristic MARKING DIAGRAM 2 CASE 463 SOT−416 STYLE 2 AE MG G 1 Symbol PD Max Unit 225 mW 1.8 mW/°C 555 °C/W 360 mW 2.9 mW/°C RqJA 345 °C/W TJ, Tstg −55 to +150 °C RqJA PD AE M G = Specific Device Code = Date Code = Pb−Free Package ORDERING INFORMATION Device Package Shipping† BAS116TT1G SOT−416 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 × 1.0 Inch Pad © Semiconductor Components Industries, LLC, 2011 September, 2011 − Rev. 1 1 Publication Order Number: BAS116TT1/D BAS116TT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR) 75 − Vdc Reverse Voltage Leakage Current (VR = 75 Vdc) Reverse Voltage Leakage Current (VR = 75 Vdc, TJ = 150°C) IR − − 5.0 80 nAdc Forward Voltage (IF = 1.0 mAdc) Forward Voltage (IF = 10 mAdc) Forward Voltage (IF = 50 mAdc) Forward Voltage (IF = 150 mAdc) VF − − − − 900 1000 1100 1250 mV Diode Capacitance (VR = 0 V, f = 1.0 MHz) CD − 2.0 pF Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) trr − 3.0 ms OFF CHARACTERISTICS Reverse Breakdown Voltage (IBR = 100 mAdc) 820 W +10 V 2.0 k 100 mH tr 0.1 mF IF tp IF t trr 10% t 0.1 mF 90% DUT 50 W INPUT SAMPLING OSCILLOSCOPE 50 W Output Pulse Generator 1. 2. 3. iR(REC) = 1.0 mA IR VR OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) INPUT SIGNAL A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Input pulse is adjusted so IR(peak) is equal to 10 mA. tp » trr Figure 1. Recovery Time Equivalent Test Circuit TYPICAL CHARACTERISTICS 1.2 CT, TOTAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 1,000 100 150°C 10 25°C −55°C 1 0.1 0 0.2 0.4 0.6 0.8 1.0 TA = 25°C 1.0 0.8 0.6 0.4 0.2 0 1.2 0 10 20 30 40 50 60 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 2. Forward Voltage Figure 3. Capacitance http://onsemi.com 2 70 80 BAS116TT1G PACKAGE DIMENSIONS SC−75/SOT−416 CASE 463−01 ISSUE F −E− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 2 3 b 3 PL 0.20 (0.008) e −D− DIM A A1 b C D E e L HE 1 M D HE C 0.20 (0.008) E INCHES NOM MAX 0.031 0.035 0.002 0.004 0.008 0.012 0.006 0.010 0.063 0.067 0.031 0.035 0.04 BSC 0.004 0.006 0.008 0.061 0.063 0.065 MIN 0.027 0.000 0.006 0.004 0.059 0.027 STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE A L MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 A1 SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.787 0.031 0.508 0.020 1.000 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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