DAN222M3T5G Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−723 package which is designed for low power surface mount applications, where board space is at a premium. http://onsemi.com Features • • • • CATHODE 3 Fast trr Low CD Available in 4 mm Tape and Reel These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 2 ANODE MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltage Peak Reverse Voltage Forward Current Symbol Value Unit VR 80 V VRM 80 V IF 100 mA THERMAL CHARACTERISTICS Rating Max Unit Power Dissipation PD 260 mW Junction Temperature TJ 150 °C Storage Temperature Range Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. t = 1.0 mS. January, 2013 − Rev. 6 3 SOT−723 CASE 631AA STYLE 3 2 N9 M 1 Symbol © Semiconductor Components Industries, LLC, 2013 MARKING DIAGRAM 1 N9 = Specific Device Code M = Date Code ORDERING INFORMATION Device DAN222M3T5G Package Shipping† SOT−723 (Pb−Free) 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: DAN222M3/D DAN222M3T5G ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Condition Min Max Unit Reverse Voltage Leakage Current (Note 2) IR VR = 70 V − 0.1 mA Forward Voltage VF IF = 100 mA − 1.2 V Reverse Breakdown Voltage VR IR = 100 mA 80 − V Diode Capacitance CD VR = 6.0 V, f = 1.0 MHz − 3.5 pF Reverse Recovery Time (Note 3) trr IF = 5.0 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR − 4.0 ns 2. For each diode while other is not forward biased. 3. trr Test Circuit on following page. TYPICAL ELECTRICAL CHARACTERISTICS 10 100 IR, REVERSE CURRENT (mA) 10 1.0 TA = 150°C 125°C 0.1 25°C 0.01 0.1 -40°C 1.0 +125°C +85°C 0.1 +55°C 0.01 +25°C -55°C 0.001 0.2 0.3 0.5 0.7 0.6 0.8 0.4 VF, FORWARD VOLTAGE (VOLTS) 0.9 10 0 1.0 Figure 1. Forward Voltage 50 60 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Reverse Current 0.80 0.75 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) +150°C 0.70 0.65 0.60 0.55 0.50 0.45 0.40 0 5 10 15 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Diode Capacitance http://onsemi.com 2 20 70 80 DAN222M3T5G 0.1 mF Pulse Generator DUT 510 + IF 100 50 W Scope RECOVERY TIME EQUIVALENT TEST CIRCUIT tr tp trr IF t t 10% Irr = 0.1 IR 90% VR IF = 5.0 mA VR = 6 V RL = 100 W tp = 100 ns tr = 0.4 ns f = 5 kHz VR = 6 V INPUT PULSE OUTPUT PULSE Figure 4. Reverse Recovery Time Test Circuit http://onsemi.com 3 DAN222M3T5G PACKAGE DIMENSIONS SOT−723 CASE 631AA ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D b1 A −Y− 3 E 1 2X HE 2 2X e b C 0.08 X Y SIDE VIEW TOP VIEW 3X 1 3X DIM A b b1 C D E e HE L L2 L L2 BOTTOM VIEW RECOMMENDED SOLDERING FOOTPRINT* MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.29 REF 0.15 0.20 0.25 STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE 2X 0.40 2X 0.27 PACKAGE OUTLINE 1.50 3X 0.52 0.36 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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