DAN222M3 D

DAN222M3T5G
Common Cathode Silicon
Dual Switching Diode
This Common Cathode Silicon Epitaxial Planar Dual Diode is
designed for use in ultra high speed switching applications. This
device is housed in the SOT−723 package which is designed for low
power surface mount applications, where board space is at a premium.
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Features
•
•
•
•
CATHODE
3
Fast trr
Low CD
Available in 4 mm Tape and Reel
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
2
ANODE
MAXIMUM RATINGS (TA = 25°C)
Rating
Reverse Voltage
Peak Reverse Voltage
Forward Current
Symbol
Value
Unit
VR
80
V
VRM
80
V
IF
100
mA
THERMAL CHARACTERISTICS
Rating
Max
Unit
Power Dissipation
PD
260
mW
Junction Temperature
TJ
150
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. t = 1.0 mS.
January, 2013 − Rev. 6
3
SOT−723
CASE 631AA
STYLE 3
2
N9 M
1
Symbol
© Semiconductor Components Industries, LLC, 2013
MARKING
DIAGRAM
1
N9 = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
DAN222M3T5G
Package
Shipping†
SOT−723
(Pb−Free)
8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
DAN222M3/D
DAN222M3T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Condition
Min
Max
Unit
Reverse Voltage Leakage Current (Note 2)
IR
VR = 70 V
−
0.1
mA
Forward Voltage
VF
IF = 100 mA
−
1.2
V
Reverse Breakdown Voltage
VR
IR = 100 mA
80
−
V
Diode Capacitance
CD
VR = 6.0 V, f = 1.0 MHz
−
3.5
pF
Reverse Recovery Time (Note 3)
trr
IF = 5.0 mA, VR = 6.0 V,
RL = 100 W, Irr = 0.1 IR
−
4.0
ns
2. For each diode while other is not forward biased.
3. trr Test Circuit on following page.
TYPICAL ELECTRICAL CHARACTERISTICS
10
100
IR, REVERSE CURRENT (mA)
10
1.0
TA = 150°C
125°C
0.1
25°C
0.01
0.1
-40°C
1.0
+125°C
+85°C
0.1
+55°C
0.01
+25°C
-55°C
0.001
0.2
0.3
0.5
0.7
0.6
0.8
0.4
VF, FORWARD VOLTAGE (VOLTS)
0.9
10
0
1.0
Figure 1. Forward Voltage
50
60
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Reverse Current
0.80
0.75
CD, DIODE CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
+150°C
0.70
0.65
0.60
0.55
0.50
0.45
0.40
0
5
10
15
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Diode Capacitance
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2
20
70
80
DAN222M3T5G
0.1 mF
Pulse Generator
DUT
510
+
IF
100
50 W Scope
RECOVERY TIME EQUIVALENT TEST CIRCUIT
tr
tp
trr
IF
t
t
10%
Irr = 0.1 IR
90%
VR
IF = 5.0 mA
VR = 6 V
RL = 100 W
tp = 100 ns
tr = 0.4 ns
f = 5 kHz
VR = 6 V
INPUT PULSE
OUTPUT PULSE
Figure 4. Reverse Recovery Time Test Circuit
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3
DAN222M3T5G
PACKAGE DIMENSIONS
SOT−723
CASE 631AA
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−X−
D
b1
A
−Y−
3
E
1
2X
HE
2
2X
e
b
C
0.08 X Y
SIDE VIEW
TOP VIEW
3X
1
3X
DIM
A
b
b1
C
D
E
e
HE
L
L2
L
L2
BOTTOM VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.15
0.21
0.27
0.25
0.31
0.37
0.07
0.12
0.17
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.29 REF
0.15
0.20
0.25
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
2X
0.40
2X
0.27
PACKAGE
OUTLINE
1.50
3X
0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
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4
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DAN222M3/D