NCV8402D, NCV8402AD Dual Self-Protected Low-Side Driver with Temperature and Current Limit NCV8402D/AD is a dual protected Low−Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain−to−Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive environments. • V(BR)DSS (Clamped) RDS(ON) TYP ID MAX 42 V 165 mW @ 10 V 2.0 A* *Max current limit value is dependent on input condition. Features • • • • • • • • www.onsemi.com Short−Circuit Protection Thermal Shutdown with Automatic Restart Overvoltage Protection Integrated Clamp for Inductive Switching ESD Protection dV/dt Robustness Analog Drive Capability (Logic Level Input) NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Drain Overvoltage Protection Gate Input ESD Protection Temperature Limit Current Limit Current Sense Source MARKING DIAGRAM Typical Applications • Switch a Variety of Resistive, Inductive and Capacitive Loads • Can Replace Electromechanical Relays and Discrete Circuits • Automotive / Industrial 8 SO−8 CASE 751 STYLE 11 8 1 xxxxxx ALYW G 1 xxxxxx A L Y W G = V8402D or 8402AD = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package PIN ASSIGNMENT 1 8 Source 1 Gate 1 Source 2 Gate 2 Drain 1 Drain 1 Drain 2 Drain 2 ORDERING INFORMATION Device Package Shipping† SOIC−8 2500/Tape & Reel NCV8402DDR2G NCV8402ADDR2G (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 October, 2015 − Rev. 2 1 Publication Order Number: NCV8402D/D NCV8402D, NCV8402AD MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Internally Clamped Drain−to−Gate Voltage Internally Clamped (RG = 1.0 MW) Gate−to−Source Voltage Continuous Drain Current Symbol Value Unit VDSS 42 V VDGR 42 V VGS "14 V ID Power Dissipation @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) Thermal Resistance Junction−to−Ambient Steady State (Note 1) Junction−to−Ambient Steady State (Note 2) Single Pulse Drain−to−Source Avalanche Energy (VDD = 32 V, VG = 5.0 V, IPK = 1.0 A, L = 300 mH, RG(ext) = 25 W) (VGS = 0 and 10 V, RI = 2.0 W, RL = 9.0 W, td = 400 ms) Load Dump Voltage Operating Junction and Storage Temperature Internally Limited PD 0.8 1.62 W RqJA RqJA 157 77 °C/W EAS 150 mJ VLD 55 V TJ, Tstg −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted onto min pad FR4 PCB, (Cu area = 40 sq. mm, 1 oz.). 2. Surface−mounted onto 1″ sq. FR4 board (Cu area = 625 sq. mm, 2 oz.). + ID DRAIN IG + VDS GATE SOURCE VGS − − Figure 1. Voltage and Current Convention www.onsemi.com 2 NCV8402D, NCV8402AD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Test Condition Symbol Min Typ Max Unit VGS = 0 V, ID = 10 mA, TJ = 25°C V(BR)DSS 42 46 55 V 40 45 55 0.25 4.0 1.1 20 50 100 OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) VGS = 0 V, ID = 10 mA, TJ = 150°C (Note 5) VGS = 0 V, VDS = 32 V, TJ = 25°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 32 V, TJ = 150°C (Note 5) Gate Input Current VDS = 0 V, VGS = 5.0 V IGSSF mA mA ON CHARACTERISTICS (Note 3) VGS = VDS, ID = 150 mA Gate Threshold Voltage Gate Threshold Temperature Coefficient VGS = 10 V, ID = 1.7 A, TJ = 25°C 1.8 2.2 V VGS(th)/TJ VGS(th) 1.3 4.0 6.0 −mV/°C RDS(on) mW 165 200 VGS = 10 V, ID = 1.7 A, TJ = 150°C (Note 5) 305 400 Static Drain−to−Source On−Resistance VGS = 5.0 V, ID = 1.7 A, TJ = 25°C 195 230 VGS = 5.0 V, ID = 1.7 A, TJ = 150°C (Note 5) 360 460 VGS = 5.0 V, ID = 0.5 A, TJ = 25°C 190 230 VGS = 5.0 V, ID = 0.5 A, TJ = 150°C (Note 5) 350 460 Source−Drain Forward On Voltage VGS = 0 V, IS = 7.0 A VSD 1.0 V VGS = 10 V, VDD = 12 V ID = 2.5 A, RL = 4.7 W tON 25 ms SWITCHING CHARACTERISTICS (Note 5) Turn−ON Time (10% VIN to 90% ID) Turn−OFF Time (90% VIN to 10% ID) Slew−Rate ON (70% VDS to 50% VDS) VGS = 10 V, VDD = 12 V, RL = 4.7 W Slew−Rate OFF (50% VDS to 70% VDS) tOFF 120 −dVDS/dtON 0.8 dVDS/dtOFF 0.3 V/ms SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 4) Current Limit VDS = 10 V, VGS = 5.0 V, TJ = 25°C 3.7 4.3 5.0 VDS = 10 V, VGS = 5.0 V, TJ = 150°C (Note 5) 2.3 3.0 3.7 VDS = 10 V, VGS = 10 V, TJ = 25°C 4.2 4.8 5.4 VDS = 10 V, VGS = 10 V, TJ = 150°C (Note 5) 2.7 3.6 4.5 150 175 200 Temperature Limit (Turn−off) Thermal Hysteresis Temperature Limit (Turn−off) Thermal Hysteresis ILIM VGS = 5.0 V (Note 5) TLIM(off) VGS = 5.0 V DTLIM(on) VGS = 10 V (Note 5) TLIM(off) VGS = 10 V DTLIM(on) VGS = 5 V ID = 1.0 A IGON A °C 15 150 165 185 15 GATE INPUT CHARACTERISTICS (Note 5) Device ON Gate Input Current 50 VGS = 10 V ID = 1.0 A Current Limit Gate Input Current VGS = 5 V, VDS = 10 V IGCL 0.05 IGTL 0.15 VGS = 10 V, VDS = 10 V Thermal Limit Fault Gate Input Current VGS = 5 V, VDS = 10 V mA 400 mA 0.4 VGS = 10 V, VDS = 10 V mA 0.7 ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5) Electro−Static Discharge Capability Human Body Model (HBM) Machine Model (MM) 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Fault conditions are viewed as beyond the normal operating range of the part. 5. Not subject to production testing. www.onsemi.com 3 ESD 4000 400 V NCV8402D, NCV8402AD TYPICAL PERFORMANCE CURVES 10 Emax (mJ) IL(max) (A) 1000 TJstart = 25°C 100 TJstart = 25°C TJstart = 150°C TJstart = 150°C 1 10 10 10 100 100 L (mH) L (mH) Figure 2. Single Pulse Maximum Switch−off Current vs. Load Inductance Figure 3. Single Pulse Maximum Switching Energy vs. Load Inductance 1000 10 1 Emax (mJ) IL(max) (A) TJstart = 25°C TJstart = 150°C 0.1 TJstart = 25°C 100 TJstart = 150°C 10 1 10 TIME IN CLAMP (ms) 1 Figure 4. Single Pulse Maximum Inductive Switch−off Current vs. Time in Clamp Figure 5. Single Pulse Maximum Inductive Switching Energy vs. Time in Clamp 5 8 8V TA = 25°C 7 10 V VDS = 10 V 6V −40°C 25°C 4 6 100°C 5V 4V 3 ID (A) ID (A) 5 3.5 V 4 3 2 3V 1 VGS = 2.5 V 0 10 TIME IN CLAMP (ms) 150°C 2 1 0 0 1 2 3 4 5 VDS (V) 1 3 VGS (V) Figure 6. On−state Output Characteristics Figure 7. Transfer Characteristics www.onsemi.com 4 2 4 5 NCV8402D, NCV8402AD TYPICAL PERFORMANCE CURVES 350 400 150°C, VGS = 5 V 150°C, ID = 0.5 A 300 RDS(on) (mW) 200 RDS(on) (mW) 150°C, ID = 1.7 A 300 100°C, ID = 1.7 A 100°C, ID = 0.5 A 25°C, ID = 1.7 A 25°C, ID = 0.5 A 150°C, VGS = 10 V 250 100°C, VGS = 5 V 100°C, VGS = 10 V 200 25°C, VGS = 5 V 150 25°C, VGS = 10 V 100 −40°C, ID = 0.5 A −40°C, ID = 1.7 A 0 4 5 −40°C, VGS = 5 V 100 −40°C, VGS = 10 V 6 7 8 9 50 0.2 10 VGS (V) 0.4 0.6 1 1.2 ID (A) Figure 8. RDS(on) vs. Gate−Source Voltage Figure 9. RDS(on) vs. Drain Current 1.4 1.6 1.8 2 8 2 ID = 1.7 A −40°C 7 1.75 VGS = 5 V 1.5 6 ILIM (A) RDS(on) (NORMALIZED) 0.8 1.25 1 25°C 5 100°C 4 VGS = 10 V 150°C 3 0.75 VDS = 10 V 0.5 −40 2 −20 0 20 40 60 T (°C) 80 100 120 140 5 6 7 8 9 10 VGS (V) Figure 10. Normalized RDS(on) vs. Temperature Figure 11. Current Limit vs. Gate−Source Voltage 10 8 VGS = 0 V 7 VGS = 10 V IDSS (mA) 6 ILIM (A) 150°C 1 5 0.1 100°C 0.01 4 25°C VGS = 5 V −40°C 0.001 3 VDS = 10 V 2 −40 −20 0 20 40 60 80 100 120 0.0001 10 140 15 20 25 30 35 TJ (°C) VDS (V) Figure 12. Current Limit vs. Junction Temperature Figure 13. Drain−to−Source Leakage Current www.onsemi.com 5 40 NCV8402D, NCV8402AD TYPICAL PERFORMANCE CURVES 1.1 ID = 150 mA VGS = VDS 1.1 1 1 VSD (V) NORMALIZED VGS(th) (V) 1.2 0.9 −40°C 0.9 25°C 0.8 100°C 0.7 0.8 150°C 0.7 0.6 0.6 −40 0.5 VGS = 0 V −20 0 20 40 60 80 100 120 1 140 5 6 7 8 9 Figure 15. Source−Drain Diode Forward Characteristics 10 1 ID = 2.5 A VDD = 12 V RG = 0 W 100 td(off) tf 50 tr td(on) 3 4 5 6 7 VGS (V) 8 9 10 DRAIN−SOURCE VOLTAGE SLOPE (V/ms) TIME (ms) 4 Figure 14. Normalized Threshold Voltage vs. Temperature 150 ID = 2.5 A VDD = 12 V RG = 0 W 0.8 0.6 −dVDS/dt(on) 0.4 dVDS/dt(off) 0.2 0 3 Figure 16. Resistive Load Switching Time vs. Gate−Source Voltage 4 5 6 7 VGS (V) 8 9 10 Figure 17. Resistive Load Switching Drain−Source Voltage Slope vs. Gate−Source Voltage 100 td(off), (VGS = 10 V) 75 tr, (VGS = 5 V) tf, (VGS = 10 V) 50 tf, (VGS = 5 V) td(off), (VGS = 5 V) 25 tr, (VGS = 10 V) 0 0 400 td(on), (VGS = 5 V) td(on), (VGS = 10 V) 800 1200 1600 2000 RG (W) DRAIN−SOURCE VOLTAGE SLOPE (V/ms) 1 ID = 2.5 A VDD = 12 V TIME (ms) 3 IS (A) 200 0 2 T (°C) −dVDS/dt(on), VGS = 10 V 0.8 0.6 0.4 dVDS/dt(off), VGS = 5 V 0.2 dVDS/dt(off), VGS = 10 V −dVDS/dt(on), VGS = 5 V ID = 2.5 A VDD = 12 V 0 0 Figure 18. Resistive Load Switching Time vs. Gate Resistance 500 1000 RG (W) 1500 2000 Figure 19. Drain−Source Voltage Slope during Turn On and Turn Off vs. Gate Resistance www.onsemi.com 6 NCV8402D, NCV8402AD TYPICAL PERFORMANCE CURVES 1000 Duty Cycle = 50% R(t) (°C/W) 100 10 1 20% 10% 5% 2% 1% 0.1 0.01 0.0000001 Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE WIDTH (sec) Figure 20. Transient Thermal Resistance www.onsemi.com 7 1 10 100 1000 NCV8402D, NCV8402AD TEST CIRCUITS AND WAVEFORMS RL VIN + D RG VDD G DUT − S IDS Figure 21. Resistive Load Switching Test Circuit 90% 10% VIN td(ON) tr td(OFF) tf 90% 10% IDS Figure 22. Resistive Load Switching Waveforms www.onsemi.com 8 NCV8402D, NCV8402AD TEST CIRCUITS AND WAVEFORMS L VDS VIN D RG + VDD G DUT − S tp IDS Figure 23. Inductive Load Switching Test Circuit 5V VIN 0V Tav Tp V(BR)DSS Ipk VDD VDS VDS(on) IDS 0 Figure 24. Inductive Load Switching Waveforms www.onsemi.com 9 NCV8402D, NCV8402AD PACKAGE DIMENSIONS SOIC−8 CASE 751−07 ISSUE AK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. −X− A 8 5 S B 0.25 (0.010) Y M M 1 4 K −Y− G C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE −Z− 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X J S INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 STYLE 11: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. DRAIN 2 7. DRAIN 1 8. DRAIN 1 SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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