MJW3281A D

MJW3281A (NPN)
MJW1302A (PNP)
Complementary NPN-PNP
Silicon Power Bipolar
Transistors
The MJW3281A and MJW1302A are PowerBase t power
transistors for high power audio, disk head positioners and other linear
applications.
Features
• Designed for 100 W Audio Frequency
• Gain Complementary:
•
•
•
•
Gain Linearity from 100 mA to 7 A
hFE = 45 (Min) @ IC = 8 A
Low Harmonic Distortion
High Safe Operation Area − 1 A/100 V @ 1 Second
High fT − 30 MHz Typical
Pb−Free Packages are Available*
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15 AMPERES
COMPLEMENTARY
SILICON POWER TRANSISTORS
230 VOLTS 200 WATTS
1
2
TO−247
CASE 340L
3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
230
Vdc
Collector−Base Voltage
VCBO
230
Vdc
Emitter−Base Voltage
VEBO
5.0
Vdc
Collector−Emitter Voltage − 1.5 V
VCEX
230
Vdc
IC
15
25
Adc
Collector Current
Collector Current
− Continuous
− Peak (Note 1)
Base Current − Continuous
IB
1.5
Adc
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
PD
200
1.43
W
W/°C
− 65 to +150
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
Characteristic
RqJC
0.625
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
40
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
MARKING DIAGRAM
MJWxxxxA
AYWWG
1 BASE
xxxx
A
Y
WW
G
Device
Package
Shipping
MJW3281A
TO−247
30 Units/Rail
TO−247
(Pb−Free)
30 Units/Rail
TO−247
30 Units/Rail
TO−247
(Pb−Free)
30 Units/Rail
MJW3281AG
MJW1302AG
© Semiconductor Components Industries, LLC, 2010
March, 2010 − Rev. 4
1
= 3281 or 1302
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
MJW1302A
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
3 EMITTER
2 COLLECTOR
Publication Order Number:
MJW3281A/D
MJW3281A (NPN) MJW1302A (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
230
−
−
−
−
50
−
−
5
4
1
−
−
−
−
50
50
50
50
50
45
12
125
−
−
−
115
−
35
200
200
200
200
200
−
−
−
0.4
2
−
−
2
−
30
−
−
−
600
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
VCEO(sus)
Collector Cutoff Current
(VCB = 230 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
IEBO
Vdc
mAdc
mAdc
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non−repetitive)
(VCE = 100 Vdc, t = 1 s (non−repetitive)
IS/b
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5 Vdc)
(IC = 1 Adc, VCE = 5 Vdc)
(IC = 3 Adc, VCE = 5 Vdc)
(IC = 5 Adc, VCE = 5 Vdc)
(IC = 7 Adc, VCE = 5 Vdc)
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 15 Adc, VCE = 5 Vdc)
hFE
Collector−Emitter Saturation Voltage
(IC = 10 Adc, IB = 1 Adc)
VCE(sat)
Base−Emitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
VBE(on)
−
Vdc
Vdc
DYNAMIC CHARACTERISTICS
fT
Current−Gain − Bandwidth Product
(IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Cob
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2
MHz
pF
MJW3281A (NPN) MJW1302A (PNP)
TYPICAL CHARACTERISTICS
PNP MJW1302A
NPN MJW3281A
60
VCE = 10 V
40
5V
30
20
10
TJ = 25°C
ftest = 1 MHz
0
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
VCE = 10 V
f,
T CURRENT BANDWIDTH PRODUCT (MHz)
f,
T CURRENT BANDWIDTH PRODUCT (MHz)
50
50
5V
40
30
20
TJ = 25°C
ftest = 1 MHz
10
0
10
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
PNP MJW1302A
NPN MJW3281A
1000
TJ = 100°C
25°C
h FE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
1000
25°C
100
TJ = 100°C
100
-25°C
-25°C
VCE = 20 V
VCE = 20 V
10
10
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
100
0.1
Figure 3. DC Current Gain, VCE = 20 V
1.0
10
IC, COLLECTOR CURRENT (AMPS)
100
Figure 4. DC Current Gain, VCE = 20 V
PNP MJW1302A
NPN MJW3281A
1000
h FE , DC CURRENT GAIN
1000
h FE , DC CURRENT GAIN
10
TJ = 100°C
25°C
100
-25°C
25°C
TJ = 100°C
100
-25°C
VCE = 5 V
VCE = 5 V
10
10
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
0.1
100
Figure 5. DC Current Gain, VCE = 5 V
1.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 6. DC Current Gain, VCE = 5 V
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3
100
MJW3281A (NPN) MJW1302A (PNP)
TYPICAL CHARACTERISTICS
PNP MJW1302A
NPN MJW3281A
45
45
1.5 A
1.5 A
35
30
1A
25
0.5 A
20
15
10
5.0
35
1A
30
0.5 A
25
20
15
10
5.0
TJ = 25°C
TJ = 25°C
0
0
0
5.0
10
15
20
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
25
0
Figure 7. Typical Output Characteristics
PNP MJW1302A
NPN MJW3281A
2.5
TJ = 25°C
IC/IB = 10
2.5
2.0
SATURATION VOLTAGE (VOLTS)
SATURATION VOLTAGE (VOLTS)
25
5.0
10
15
20
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 8. Typical Output Characteristics
3.0
VBE(sat)
1.5
1.0
0.5
TJ = 25°C
IC/IB = 10
2.0
1.5
VBE(sat)
1.0
0.5
VCE(sat)
VCE(sat)
0
0
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
100
0.1
Figure 10. Typical Saturation Voltages
PNP MJW1302A
NPN MJW3281A
10
TJ = 25°C
VCE = 5 V (DASHED)
1.0
VCE = 20 V (SOLID)
0.1
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Typical Saturation Voltages
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
IB = 2 A
40
IB = 2 A
IC , COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
40
1.0
10
IC, COLLECTOR CURRENT (AMPS)
100
10
TJ = 25°C
VCE = 5 V (DASHED)
1.0
VCE = 20 V (SOLID)
0.1
0.1
Figure 11. Typical Base−Emitter Voltage
1.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 12. Typical Base−Emitter Voltage
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4
100
100
MJW3281A (NPN) MJW1302A (PNP)
PNP MJW1302A
NPN MJW3281A
100
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
100
10 mSec
10
100 mSec
1 Sec
1.0
0.1
10 mSec
10
100 mSec
1 Sec
1.0
0.1
1.0
10
100
VCE, COLLECTOR EMITTER (VOLTS)
1000
1.0
Figure 13. Active Region Safe Operating Area
10
100
VCE, COLLECTOR EMITTER (VOLTS)
1000
Figure 14. Active Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 13 and 14 is based on TJ(pk) = 150°C;
TC is variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power than
can be handled to values less than the limitations imposed by
second breakdown.
TYPICAL CHARACTERISTICS
PNP MJW1302A
NPN MJW3281A
10000
Cib
Cib
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
10000
Cob
1000
1000
Cob
TJ = 25°C
ftest = 1 MHz
TJ = 25°C
ftest = 1 MHz
100
100
0.1
1.0
10
100
0.1
1.0
10
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 15. MJW1302A Typical Capacitance
Figure 16. MJW3281A Typical Capacitance
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5
100
MJW3281A (NPN) MJW1302A (PNP)
PACKAGE DIMENSIONS
TO−247
CASE 340L−02
ISSUE E
−T−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
C
−B−
E
U
N
L
4
A
−Q−
1
2
0.63 (0.025)
3
M
T B
M
P
−Y−
K
F 2 PL
W
J
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
U
W
MILLIMETERS
MIN
MAX
20.32
21.08
15.75
16.26
4.70
5.30
1.00
1.40
1.90
2.60
1.65
2.13
5.45 BSC
1.50
2.49
0.40
0.80
19.81
20.83
5.40
6.20
4.32
5.49
--4.50
3.55
3.65
6.15 BSC
2.87
3.12
INCHES
MIN
MAX
0.800
8.30
0.620
0.640
0.185
0.209
0.040
0.055
0.075
0.102
0.065
0.084
0.215 BSC
0.059
0.098
0.016
0.031
0.780
0.820
0.212
0.244
0.170
0.216
--0.177
0.140
0.144
0.242 BSC
0.113
0.123
H
G
D 3 PL
0.25 (0.010)
M
Y Q
S
PowerBase is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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MJW3281A/D