MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS 8 AMPERES, 400 VOLTS 100 WATTS Applications • • • • • Small Engine Ignition Switching Regulators Inverters Solenoid and Relay Drivers Motor Controls MAXIMUM RATINGS Symbol Value Unit Collector−Emitter Voltage Rating VCEO(sus) 400 Vdc Collector−Emitter Voltage VCEV 800 Vdc Emitter−Base Voltage VEB 8 Vdc Collector Current − Continuous − Peak (Note 1) IC ICM 8 16 Adc Base Current − Continuous − Peak (Note 1) IB IBM 2.5 5 Adc Total Device Dissipation @ TA = 25_C Derate above 25°C PD 2 0.016 W W/_C Total Device Dissipation @ TC = 25_C Derate above 25°C PD 100 0.8 W W/_C TJ, Tstg −65 to +150 _C Operating and Storage Junction Temperature Range ≈ 100 COLLECTOR 2,4 BASE 1 EMITTER 3 MARKING DIAGRAM D2PAK CASE 418B STYLE 1 THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.25 _C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds TL 275 _C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. ≈ 50 B5742 A Y WW G B5742G AYWW = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device MJB5742T4G Package Shipping† D2PAK (Pb−Free) 800 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2011 June, 2011 − Rev. 2 1 Publication Order Number: MJB5742/D MJB5742T4G ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 400 − − Vdc Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C) ICEV − − − − 1 5 mAdc Emitter Cutoff Current (VEB = 8 Vdc, IC = 0) IEBO − − 75 mAdc OFF CHARACTERISTICS (Note 2) Collector−Emitter Sustaining Voltage (IC = 50 mA, IB = 0) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased Clamped Inductive SOA with Base Reverse Biased IS/b See Figure 6 RBSOA See Figure 7 ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.5 Adc, VCE = 5 Vdc) (IC = 4 Adc, VCE = 5 Vdc) hFE 50 200 100 400 − − − Collector−Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc) Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc) Collector−Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc, TC = 100_C) VCE(sat) − − − − − − 2 3 2.2 Vdc Base−Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc) Base−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc) Base−Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc, TC = 100_C) VBE(sat) − − − − − − 2.5 3.5 2.4 Vdc Vf − − 2.5 Vdc td − 0.04 − ms tr − 0.5 − ms ts − 8 − ms tf − 2 − ms tsv − 4 − ms tc − 2 − ms Diode Forward Voltage (Note 3) (IF = 5 Adc) SWITCHING CHARACTERISTICS Typical Resistive Load (Table 1) Delay Time Rise Time Storage Time (VCC = 250 Vdc, IC(pk) = 6 A IB1 = IB2 = 0.25 A, tp = 25 ms, Duty Cycle v 1%) Fall Time Inductive Load, Clamped (Table 1) Voltage Storage Time Crossover Time (IC(pk) = 6 A, VCE(pk) = 250 Vdc IB1 = 0.06 A, VBE(off) = 5 Vdc) 2. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2%. 3. The internal Collector−to−Emitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers. http://onsemi.com 2 MJB5742T4G TYPICAL CHARACTERISTICS POWER DERATING FACTOR (%) 100 IC(pk) SECOND BREAKDOWN DERATING 80 VCE(pk) 90% VCE(pk) IC 90% IC trv tsv tfi tti 60 tc THERMAL DERATING VCE 40 10% VCE(pk) IB 90% IB1 10% IC(pk) 2% IC 20 0 0 20 40 120 60 80 100 TC, CASE TEMPERATURE (°C) 140 160 TIME Figure 1. Power Derating Figure 2. Inductive Switching Measurements 2.4 150°C 1000 VCE = 5 V +25°C -55°C 100 10 0.1 2 1 IC, COLLECTOR CURRENT (AMPS) 5 2.2 hFE = 20 2 1.8 -55°C 1.6 1.4 +25°C 1.2 +150°C 1 0.8 0.6 0.4 10 0.2 Figure 3. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) hFE , DC CURRENT GAIN VBE, BASE-EMITTER VOLTAGE (VOLTS) 2000 0.5 1 2 5 IC, COLLECTOR CURRENT (AMPS) Figure 4. Base−Emitter Voltage 1.8 1.6 hFE = 20 1.4 1.2 1 -55°C 0.8 +25°C 0.6 +150°C 0.4 0.2 0.1 0.2 0.5 1 2 5 IC, COLLECTOR CURRENT (AMPS) Figure 5. Collector−Emitter Saturation Voltage http://onsemi.com 3 10 10 MJB5742T4G Table 1. Test Conditions for Dynamic Performance RESISTIVE SWITCHING REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING +5 V TEST CIRCUITS 0.001 mF PW DUTY CYCLE ≤ 10% tr, tf ≤ 10 ns 1 k 68 +VCC MJE21 0 33 1N493 3 2N222 2 L 47 1/2 W COIL DATA: FERROXCUBE CORE #6656 FULL BOBBIN (~16 TURNS) #16 100 RC Vclamp 5.1 k 51 IB VCE TEST WAVEFORMS IC(pk) t t1 VCE tf -4 V - VBE(off) VCC = 30 V VCE(pk) = 250 Vdc IC(pk) = 6 A TIM E t t2 ≈ Lcoil (IC pk) VCC Lcoil (IC pk) Vclamp t2 http://onsemi.com 4 VCC = 250 V D1 = 1N5820 OR EQUIV. +10 V t1 ADJUSTED TO OBTAIN IC t1 ≈ VCEOR Vclamp D 1 MJE20 0 GAP FOR 200 mH/20 A Lcoil = 200 mH tf CLAMPED SCOPE RB *SELECTED FOR ≥ 1 kV OUTPUT WAVEFORMS IC TUT T.U.T. 1 k 2N2905 NOTE: PW and VCC Adjusted for Desired IC RB Adjusted for Desired IB1 MR826 * IC RB 1 +5 Vk 1N493 3 0.02 mF 270 CIRCUIT VALUES VCC 33 1N493 3 TEST EQUIPMENT SCOPE-TEKTRONICS 475 OR EQUIVALENT 25 ms 0 - 9.2 V tr, tf < 10 ns DUTY CYCLE = 1% RB AND RC ADJUSTED FOR DESIRED IB AND IC MJB5742T4G SAFE OPERATING AREA INFORMATION FORWARD BIAS REVERSE BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 6 may be found at any case temperature by using the appropriate curve on Figure 1. For inductive loads, high voltage and high current must be sustained simultaneously during turn−off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage−current condition allowable during reverse biased turnoff. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 7 gives the complete RBSOA characteristics. 16 16 10 8 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) The Safe Operating Area figures shown in Figures 6 and 7 are specified ratings for these devices under the test conditions shown. 100 ms 3 10 ms 5ms 1 0.5 0.3 BONDING WIRE LIMIT dc THERMAL LIMIT (SINGLE PULSE) SECOND BREAKDOWN LIMIT 0.1 1ms 0.05 CURVES APPLY BELOW RATED VCEO MJB5742 0.02 5 14 12 10 8 VBE(off) ≤ 5 V TJ = 100°C 6 4 2 0 100 10 20 50 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 0 400 Figure 6. Forward Bias Safe Operating Area 100 200 300 400 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Reverse Bias Safe Operating Area RESISTIVE SWITCHING PERFORMANCE 10 tr 7 ts 5 0.3 0.2 t, TIME (s) μ t, TIME (s) μ 1 0.7 0.5 VCC = 250 V IB1 = IB2 IC/IB = 20 td 0.1 3 2 1 0.07 0.05 0.7 0.5 0.03 0.02 0.2 0.3 0.2 0.2 0.3 0.3 0.5 0.7 1 2 3 5 7 10 VCC = 250 V IB1 = IB2 IC/IB = 20 tf 0.5 0.7 1 2 3 5 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 8. Turn−On Time Figure 9. Turn−Off Time http://onsemi.com 5 7 10 500 MJB5742T4G PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE K C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. V W −B− 4 1 2 A S 3 −T− SEATING PLANE K J G D W H 3 PL 0.13 (0.005) M T B M INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR VARIABLE CONFIGURATION ZONE N R P U L M DIM A B C D E F G H J K L M N P R S V L M L M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT* 10.49 8.38 16.155 2X 3.504 2X 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 MJB5742T4G ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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