MJB5742 D

MJB5742T4G
NPN Silicon Power
Darlington Transistors
The Darlington transistors are designed for high−voltage power
switching in inductive circuits.
Features
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• These Devices are Pb−Free and are RoHS Compliant
POWER DARLINGTON
TRANSISTORS
8 AMPERES, 400 VOLTS
100 WATTS
Applications
•
•
•
•
•
Small Engine Ignition
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
MAXIMUM RATINGS
Symbol
Value
Unit
Collector−Emitter Voltage
Rating
VCEO(sus)
400
Vdc
Collector−Emitter Voltage
VCEV
800
Vdc
Emitter−Base Voltage
VEB
8
Vdc
Collector Current
− Continuous
− Peak (Note 1)
IC
ICM
8
16
Adc
Base Current
− Continuous
− Peak (Note 1)
IB
IBM
2.5
5
Adc
Total Device Dissipation @ TA = 25_C
Derate above 25°C
PD
2
0.016
W
W/_C
Total Device Dissipation @ TC = 25_C
Derate above 25°C
PD
100
0.8
W
W/_C
TJ, Tstg
−65 to +150
_C
Operating and Storage Junction
Temperature Range
≈ 100
COLLECTOR 2,4
BASE
1
EMITTER 3
MARKING
DIAGRAM
D2PAK
CASE 418B
STYLE 1
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
1.25
_C/W
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
_C/W
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
TL
275
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
≈ 50
B5742
A
Y
WW
G
B5742G
AYWW
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
MJB5742T4G
Package
Shipping†
D2PAK
(Pb−Free)
800 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
June, 2011 − Rev. 2
1
Publication Order Number:
MJB5742/D
MJB5742T4G
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VCEO(sus)
400
−
−
Vdc
Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)
ICEV
−
−
−
−
1
5
mAdc
Emitter Cutoff Current (VEB = 8 Vdc, IC = 0)
IEBO
−
−
75
mAdc
OFF CHARACTERISTICS (Note 2)
Collector−Emitter Sustaining Voltage (IC = 50 mA, IB = 0)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
Clamped Inductive SOA with Base Reverse Biased
IS/b
See Figure 6
RBSOA
See Figure 7
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 0.5 Adc, VCE = 5 Vdc)
(IC = 4 Adc, VCE = 5 Vdc)
hFE
50
200
100
400
−
−
−
Collector−Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc)
Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc)
Collector−Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc, TC = 100_C)
VCE(sat)
−
−
−
−
−
−
2
3
2.2
Vdc
Base−Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc)
Base−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc)
Base−Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc, TC = 100_C)
VBE(sat)
−
−
−
−
−
−
2.5
3.5
2.4
Vdc
Vf
−
−
2.5
Vdc
td
−
0.04
−
ms
tr
−
0.5
−
ms
ts
−
8
−
ms
tf
−
2
−
ms
tsv
−
4
−
ms
tc
−
2
−
ms
Diode Forward Voltage (Note 3) (IF = 5 Adc)
SWITCHING CHARACTERISTICS
Typical Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
(VCC = 250 Vdc, IC(pk) = 6 A
IB1 = IB2 = 0.25 A, tp = 25 ms,
Duty Cycle v 1%)
Fall Time
Inductive Load, Clamped (Table 1)
Voltage Storage Time
Crossover Time
(IC(pk) = 6 A, VCE(pk) = 250 Vdc
IB1 = 0.06 A, VBE(off) = 5 Vdc)
2. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2%.
3. The internal Collector−to−Emitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the
Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.
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2
MJB5742T4G
TYPICAL CHARACTERISTICS
POWER DERATING FACTOR (%)
100
IC(pk)
SECOND BREAKDOWN DERATING
80
VCE(pk)
90% VCE(pk)
IC
90% IC
trv
tsv
tfi
tti
60
tc
THERMAL DERATING
VCE
40
10% VCE(pk)
IB
90% IB1
10%
IC(pk)
2% IC
20
0
0
20
40
120
60
80
100
TC, CASE TEMPERATURE (°C)
140
160
TIME
Figure 1. Power Derating
Figure 2. Inductive Switching Measurements
2.4
150°C
1000
VCE = 5 V
+25°C
-55°C
100
10
0.1
2
1
IC, COLLECTOR CURRENT (AMPS)
5
2.2
hFE = 20
2
1.8
-55°C
1.6
1.4
+25°C
1.2
+150°C
1
0.8
0.6
0.4
10
0.2
Figure 3. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN
VBE, BASE-EMITTER VOLTAGE (VOLTS)
2000
0.5
1
2
5
IC, COLLECTOR CURRENT (AMPS)
Figure 4. Base−Emitter Voltage
1.8
1.6
hFE = 20
1.4
1.2
1
-55°C
0.8
+25°C
0.6
+150°C
0.4
0.2
0.1
0.2
0.5
1
2
5
IC, COLLECTOR CURRENT (AMPS)
Figure 5. Collector−Emitter Saturation Voltage
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3
10
10
MJB5742T4G
Table 1. Test Conditions for Dynamic Performance
RESISTIVE
SWITCHING
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
+5 V
TEST CIRCUITS
0.001 mF
PW
DUTY CYCLE ≤ 10%
tr, tf ≤ 10 ns
1
k
68
+VCC
MJE21
0
33 1N493
3
2N222
2
L
47
1/2
W
COIL DATA:
FERROXCUBE CORE #6656
FULL BOBBIN (~16 TURNS) #16
100
RC
Vclamp
5.1
k
51
IB
VCE
TEST WAVEFORMS
IC(pk)
t
t1
VCE
tf
-4 V
- VBE(off)
VCC = 30 V
VCE(pk) = 250 Vdc
IC(pk) = 6 A
TIM
E
t
t2 ≈
Lcoil (IC
pk)
VCC
Lcoil (IC
pk)
Vclamp
t2
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4
VCC = 250 V
D1 = 1N5820 OR EQUIV.
+10 V
t1 ADJUSTED TO
OBTAIN IC
t1 ≈
VCEOR
Vclamp
D
1
MJE20
0
GAP FOR 200 mH/20 A
Lcoil = 200 mH
tf
CLAMPED
SCOPE
RB
*SELECTED FOR ≥ 1 kV
OUTPUT WAVEFORMS
IC
TUT
T.U.T.
1
k 2N2905
NOTE:
PW and VCC Adjusted for Desired IC
RB Adjusted for Desired IB1
MR826
*
IC
RB
1
+5 Vk
1N493
3
0.02 mF 270
CIRCUIT
VALUES
VCC
33
1N493
3
TEST EQUIPMENT
SCOPE-TEKTRONICS
475 OR EQUIVALENT
25 ms
0
- 9.2 V
tr, tf < 10 ns
DUTY CYCLE = 1%
RB AND RC ADJUSTED
FOR DESIRED IB AND IC
MJB5742T4G
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
REVERSE BIAS
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ≥ 25_C. Second breakdown limitations do
not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 6 may be found at
any case temperature by using the appropriate curve on
Figure 1.
For inductive loads, high voltage and high current must be
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current condition allowable
during reverse biased turnoff. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 7 gives the complete RBSOA
characteristics.
16
16
10
8
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
The Safe Operating Area figures shown in Figures 6 and 7 are specified ratings for these devices under the test conditions shown.
100 ms
3
10 ms
5ms
1
0.5
0.3
BONDING WIRE LIMIT
dc
THERMAL LIMIT
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
0.1
1ms
0.05 CURVES APPLY BELOW RATED VCEO
MJB5742
0.02
5
14
12
10
8
VBE(off) ≤ 5 V
TJ = 100°C
6
4
2
0
100
10
20
50
200
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0
400
Figure 6. Forward Bias Safe Operating Area
100
200
300
400
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. Reverse Bias Safe Operating Area
RESISTIVE SWITCHING PERFORMANCE
10
tr
7
ts
5
0.3
0.2
t, TIME (s)
μ
t, TIME (s)
μ
1
0.7
0.5
VCC = 250 V
IB1 = IB2
IC/IB = 20
td
0.1
3
2
1
0.07
0.05
0.7
0.5
0.03
0.02
0.2
0.3
0.2
0.2 0.3
0.3
0.5 0.7
1
2
3
5
7
10
VCC = 250 V
IB1 = IB2
IC/IB = 20
tf
0.5 0.7
1
2
3
5
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 8. Turn−On Time
Figure 9. Turn−Off Time
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5
7
10
500
MJB5742T4G
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE K
C
E
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
V
W
−B−
4
1
2
A
S
3
−T−
SEATING
PLANE
K
J
G
D
W
H
3 PL
0.13 (0.005)
M
T B
M
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
VARIABLE
CONFIGURATION
ZONE
N
R
P
U
L
M
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
L
M
L
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
10.49
8.38
16.155
2X
3.504
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
MJB5742T4G
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