MJE13005A(NPN) SEMICONDUCTOR RoHS RoHS Nell High Power Products Switchmode Series NPN Silicon Power Transistors (4A / 400V / 75W) FEATURES VCEO(SUS) ≥ 400V @ lC = 10 mA, lB = 0 VCE(sat) = 1.0V (Max.) @ lC = 4 A, lB = 1 A Switching time - tf = 0.9 µs (Max.) @ lC = 2 A 700V blocking capability 1 2 3 TO-220AB (MJE13005A) DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as switching regulators, inverters, motor controls, solenoid/relay drivers and deflection circuits. INTERNAL SCHEMATIC DIAGRAM C (TAB) (1) B (2) E (NPN) ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL VALUE VCEV Collector to base voltage (V BE = 0) 700 V CEO Collector to emitter voltage (I B = 0) 400 V EBO Emitter to base voltage 9 IC Collector current - continuous 4 I CM Peak collector current (Note 1) 8 IB Base current - continuous 2 I BM Peak base current (Note 1) 4 IE Emitter current - continuous 6 I EM Peak emitter current (Note 1) 12 UNIT V A T C = 25°C Total power dissipation 75 W Derate above 25ºC 0.6 W/ºC Tj Junction temperature 150 T stg Storage temperature -65 to 150 PD ºC TL Maximum lead temperature for soldering purposes: 1/16” from case for ≤ 10 seconds Note: 1. Pulse test : Pulse width = 5ms, duty cycle ≤ 10% www.nellsemi.com Page 1 of 6 265 ºC MJE13005A( NPN ) SEMICONDUCTOR RoHS RoHS Nell High Power Products THERMAL CHARACTERISTICS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL VALUE Rth(j-c) Maximum thermal resistance, junction to case 1.67 Rth(j-a) Maximum thermal resistance, junction to ambient 62.5. UNIT ºC/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL CONDITIONS MIN TYP MAX OFF CHARACTERISTICS ICEV V CE = 700V, V BE(off) = 1.5V 1.0 V CE = 700V, V BE(off) = 1.5V, T C = 100°C 5.0 Collector cutoff current mA ICEO Collector cutoff current V CE = 400V, l B = 0 0.1 I EBO Emitter cutoff current V EBO = 9V, l C = 0 1.0 Collector to emitter sustaining voltage l C = 10mA, l B = 0 400 V (BR)CEV Collector to base breakdown voltage l C = 10mA, V BE = 0 700 V (BR)EBO Emitter to base breakdown voltage l E = 10mA, l C = 0 9 l C = 1A , V CE = 5V 10 60 l C = 2A , V CE = 5V 8 40 V CEO (SUS) * V ON CHARACTERISTICS h FE V CE(sat)* V BE(on)* Forward current transfer ratio (DC current gain) l C = 1A , I B = 0.2A 0.5 l C = 2A, l B = 0.5A 0.6 l C = 4A, l B = 1A 1.0 I C = 2A, l B = 0.5A, T C = 100°C 1.0 l C = 1A , I B = 0.2A 1.2 l C = 2A, l B = 0.5A 1.6 l C = 2A, l B = 0.5A, T C = 100°C 1.5 Collector to emitter saturation voltage Base to emitter on voltage V V DYNAMIC CHARACTERISTICS fT C ob Transition frequency (Current gain- Bandwidth product ) l C = 0.5A, V CE = 10V, f test = 1MHz Output capacitance V CB = 10V, l E = 0, f test = 0.1MHz 4 MH Z 65 pF SWITCHING CHARACTERISTICS td Delay time tr Rise time ts Storage time tf Fall time V CC = 125V , I C = 2A I B1 = I B2 =0.4A, t p = 25µs duty clcye ≤1% *Pulsed : Pulse duration = 300 µs, duty cycle = 2%. www.nellsemi.com Page 2 of 6 0.03 0.1 0.35 0.7 2.0 4.0 0.45 0.9 µs MJE13005A( NPN ) SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.2 V CE(sat) - I B characteristics (Typical) Collector-Emitter saturation voltage V CE (sat) Fig.1 DC current gain 100 T J = 150°C 50 25°C 30 20 -55°C 10 V CE = 2V V CE = 5V 7 5 0.04 0.06 0.1 0.2 0.4 0.6 1 2 4 Base-Emitter voltage , V BE (V) l C = 1A 2A 3A 4A 1.2 0.8 0.4 0 0.03 0.05 0.1 0.2 0.3 0.5 0.7 1 2 Base current, I B (A) Fig.3 V BE - I C characteristics (Typical) Fig.4 V CE(sat) - I C characteristics (Typical) 1.3 1.1 T J = 25°C 1.6 Collector current, I C (A) Collector-emitter saturation voltage v CE(sat) (V) Dc current gain, h FE 70 2 V BE(sat) @ l C / l B = 4 V BE(on) @ V CE = 2V T J = -55°C 0.9 25°C 0.7 25°C 0.5 150°C 0.3 0.04 0.06 0.1 0.2 0.4 0.6 1 2 4 3 0.55 lC / lB = 4 0.45 T J = -55°C 0.35 25°C 0.25 150°C 0.15 0.05 0.04 0.06 0.1 Collector current, l C (A) 0.2 0.4 0.6 1 4 2 Collector current, l C (A) Fig.5 Collector cutoff region Fig.6 Capacitance 2K 10K 1K Capacitance (pF) Collector current , I C (µA) V CE = 250V T J = 150°C 100 125°C 100°C 10 75°C 50°C 1 25°C 0.1 -0.4 -0.2 0 0.2 0.4 300 200 100 70 50 20 0.3 0.6 Base-Emitter voltage , V BE (V) www.nellsemi.com C ib 30 FORWARD REVERSE 1K 700 500 C ob 0.5 1 3 5 10 30 50 Reverse voltage, V R (V) Page 3 of 6 100 300 MJE13005A( NPN ) SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.8 Turn-Off time Fig.7 Turn-On time 1 10 V CC = 125V lC / lB = 5 T J = 25°C 0.5 V CC = 125V lC / lB = 5 T J = 25°C ts 5 2 Time,t (µs) Time,t (µs) tr 0.2 0.1 0.05 1 0.5 t d @ V BE(off) = 5V 0.3 0.02 tf 0.2 0.01 0.04 0.1 0.2 0.4 1 0.1 0.04 4 2 0.1 Collector current , l C (A) 0.2 0.5 1 2 Collector current , l C (A) Fig.9 Test conditions for dynamic performance RESISTIVE SWITCHING REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING +5V V CC 1N4933 33Ω +125V MJE210 Mr826* TEST CIRCUITS 0.001 µF 33Ω 5V PW 1N4933 2N222 lC lB 5.1kΩ +5V 1kΩ T.U.T. 1N4933 0.02 µF 270Ω 47Ω ½W NOTE PW and V cc Adjusted for Desired l C RB Adjusted for Desired l B1 V CE -4.0V MJE200 100Ω V CC = 20V V clamp = 300 Vdc GAP for 200 µH / 20A L coil = 200 µH TEST WAVEFORMS t f UNCLAMPED ≈ t 2 l C(pk) t 25 µs t 1 ADJUSTED TO OBTAIN l C t1 ≈ tf L COil (l C PK ) V CC V CE V CE or V clamp t2 ≈ L COil (l C PK ) V clamp t www.nellsemi.com V CC = 125V R C = 62Ω D1 = 1N5820 or Equiv. R B = 22Ω +10V t f CLAMPED lC D1 51Ω +5V Coil Data : Ferroxcube Core #6656 Full Bobbin (~16 Turns) #16 TIME SCOPE RB * SELECTED FOR ≥1kV 1KΩ t1 DUT V clamp 68Ω 2N2905 CIRCUIT VALUES RC RB 1KΩ DUTY CYCLE ≤ 10% t r ,t f ≤ 10ns L t2 Page 4 of 6 0 Test Equipment Scope-Tektronics 475 or Equivalent -8V t r , t f < 10 ns Duty Cycle = 1.0% R B and R C adjusted for desired l B and l C 4 MJE13005A( NPN ) SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.10 Typical thermal response【Z th(j-c) (t)】 Transient thermal resistance (Normalized) 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.07 0.1 P (pk) 0.05 Z th(j-c)(t) = r(t) R th(j-c) R th(j-c) = 1.67°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(PK) - T C = P (pK) Z th(j-c)(t) 0.05 0.02 0.03 0.01 0.02 0.05 0.1 t2 DUTY CYCLE, D = t 1 /t 2 SINGLE PULSE 0.01 0.01 0.02 t1 0.2 0.5 1 5 2 10 20 50 100 200 500 1K time,t (ms) Fig.12 Reverse bias switching safe operating area (RBSOA) Fig.11 Forward bias safe operating area (FBSOA) 4 10 T C ≤ 100°C 2 5 ms Collector current , I C (A) Collector current , I C (A) 5 500 µs dc 1 0.5 1 ms 0.2 Bonding wire limited 0.1 Thermally limited T C = 25°C (single pulse) 0.05 Second breardown limited 0.02 0.01 T j = 150°C l B1 = 2.0A 3 2 V B1(off) = 9V 1 5V MJE13005A 3V 1.5V MJE13005A 0 5 7 10 20 30 50 70 100 0 200 300 500 Collector - Emitter voltage, V CE (V) 200 300 400 500 600 700 800 Collector - Emitter voltage, V CE (V) FORWARD BIAS REVERSE BLAS There are two limitations on the power handling ability of a transistor:average junction temperature and second breakdown. Safe operating area curves indicate l C - V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Fig.11 is based on T C = 25°C ; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when T C ≥ 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Fig.11 may be found at any case temperature by using the appropriate curve on Fig.13. T J(pk) may be calculated from the data in Fig.10. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations mposed by second breakdown. www.nellsemi.com 100 For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and repesents the voltage-current conditions during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Fig.12 gives the complete RBSOA characteristics. Page 5 of 6 MJE13005A( NPN ) SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.13 Forward bias power derating Power derating factor 1 SECOND BREAKDOWN DERATING 0.8 0.6 THERMAL DERATING 0.4 0.2 0 20 40 60 80 100 120 140 160 Case temperature , T C (°C) TO-220AB 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) 4.70 (0.185) 4.44 (0.1754) 3.91 (0.154) 3.74 (0.148) 1.39 (0.055) 1.14 (0.045) 2.87 (0.113) 2.62 (0.103) 3.68 (0.145) 3.43 (0.135) 1 PIN 2 16.13 (0.635) 15.87 (0.625) 3 4.06 (0.160) 3.56 (0.140) 15.32 (0.603) 14.55 (0.573) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 2.79 (0.110) 2.54 (0.100) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) www.nellsemi.com 14.22 (0.560) 13.46 (0.530) 0.90 (0.035) 0.70 (0.028) 5.20 (0.205) 4.95 (0.195) Page 6 of 6 0.56 (0.022) 0.36 (0.014)