MJE13005A(NPN)

MJE13005A(NPN)
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Switchmode Series NPN Silicon Power Transistors
(4A / 400V / 75W)
FEATURES
VCEO(SUS) ≥ 400V @ lC = 10 mA, lB = 0
VCE(sat) = 1.0V (Max.) @ lC = 4 A, lB = 1 A
Switching time - tf = 0.9 µs (Max.) @ lC = 2 A
700V blocking capability
1
2
3
TO-220AB
(MJE13005A)
DESCRIPTION
These devices are designed for high-voltage,
high-speed power switching inductive circuits
where fall time is critical. They are particularly
suited for 115 and 220V SWITCHMODE
applications such as switching regulators,
inverters, motor controls, solenoid/relay drivers
and deflection circuits.
INTERNAL SCHEMATIC DIAGRAM
C (TAB)
(1)
B
(2)
E
(NPN)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
VALUE
VCEV
Collector to base voltage (V BE = 0)
700
V CEO
Collector to emitter voltage (I B = 0)
400
V EBO
Emitter to base voltage
9
IC
Collector current - continuous
4
I CM
Peak collector current (Note 1)
8
IB
Base current - continuous
2
I BM
Peak base current (Note 1)
4
IE
Emitter current - continuous
6
I EM
Peak emitter current (Note 1)
12
UNIT
V
A
T C = 25°C
Total power dissipation
75
W
Derate above 25ºC
0.6
W/ºC
Tj
Junction temperature
150
T stg
Storage temperature
-65 to 150
PD
ºC
TL
Maximum lead temperature for soldering purposes:
1/16” from case for ≤ 10 seconds
Note: 1. Pulse test : Pulse width = 5ms, duty cycle ≤ 10%
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Page 1 of 6
265
ºC
MJE13005A( NPN )
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
THERMAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
VALUE
Rth(j-c)
Maximum thermal resistance, junction to case
1.67
Rth(j-a)
Maximum thermal resistance, junction to ambient
62.5.
UNIT
ºC/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
OFF CHARACTERISTICS
ICEV
V CE = 700V, V BE(off) = 1.5V
1.0
V CE = 700V, V BE(off) = 1.5V, T C = 100°C
5.0
Collector cutoff current
mA
ICEO
Collector cutoff current
V CE = 400V, l B = 0
0.1
I EBO
Emitter cutoff current
V EBO = 9V, l C = 0
1.0
Collector to emitter sustaining voltage
l C = 10mA, l B = 0
400
V (BR)CEV
Collector to base breakdown voltage
l C = 10mA, V BE = 0
700
V (BR)EBO
Emitter to base breakdown voltage
l E = 10mA, l C = 0
9
l C = 1A , V CE = 5V
10
60
l C = 2A , V CE = 5V
8
40
V CEO (SUS) *
V
ON CHARACTERISTICS
h FE
V CE(sat)*
V BE(on)*
Forward current transfer ratio
(DC current gain)
l C = 1A , I B = 0.2A
0.5
l C = 2A, l B = 0.5A
0.6
l C = 4A, l B = 1A
1.0
I C = 2A, l B = 0.5A, T C = 100°C
1.0
l C = 1A , I B = 0.2A
1.2
l C = 2A, l B = 0.5A
1.6
l C = 2A, l B = 0.5A, T C = 100°C
1.5
Collector to emitter saturation voltage
Base to emitter on voltage
V
V
DYNAMIC CHARACTERISTICS
fT
C ob
Transition frequency
(Current gain- Bandwidth product )
l C = 0.5A, V CE = 10V, f test = 1MHz
Output capacitance
V CB = 10V, l E = 0, f test = 0.1MHz
4
MH Z
65
pF
SWITCHING CHARACTERISTICS
td
Delay time
tr
Rise time
ts
Storage time
tf
Fall time
V CC = 125V , I C = 2A
I B1 = I B2 =0.4A, t p = 25µs
duty clcye ≤1%
*Pulsed : Pulse duration = 300 µs, duty cycle = 2%.
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Page 2 of 6
0.03
0.1
0.35
0.7
2.0
4.0
0.45
0.9
µs
MJE13005A( NPN )
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.2 V CE(sat) - I B characteristics (Typical)
Collector-Emitter saturation voltage
V CE (sat)
Fig.1 DC current gain
100
T J = 150°C
50
25°C
30
20
-55°C
10
V CE = 2V
V CE = 5V
7
5
0.04 0.06
0.1
0.2
0.4 0.6
1
2
4
Base-Emitter voltage , V BE (V)
l C = 1A
2A
3A
4A
1.2
0.8
0.4
0
0.03
0.05
0.1
0.2 0.3
0.5 0.7 1
2
Base current, I B (A)
Fig.3 V BE - I C characteristics (Typical)
Fig.4 V CE(sat) - I C characteristics (Typical)
1.3
1.1
T J = 25°C
1.6
Collector current, I C (A)
Collector-emitter saturation voltage
v CE(sat) (V)
Dc current gain, h FE
70
2
V BE(sat) @ l C / l B = 4
V BE(on) @ V CE = 2V
T J = -55°C
0.9
25°C
0.7
25°C
0.5
150°C
0.3
0.04 0.06 0.1
0.2
0.4 0.6
1
2
4
3
0.55
lC / lB = 4
0.45
T J = -55°C
0.35
25°C
0.25
150°C
0.15
0.05
0.04 0.06
0.1
Collector current, l C (A)
0.2
0.4 0.6
1
4
2
Collector current, l C (A)
Fig.5 Collector cutoff region
Fig.6 Capacitance
2K
10K
1K
Capacitance (pF)
Collector current , I C (µA)
V CE = 250V
T J = 150°C
100
125°C
100°C
10
75°C
50°C
1
25°C
0.1
-0.4
-0.2
0
0.2
0.4
300
200
100
70
50
20
0.3
0.6
Base-Emitter voltage , V BE (V)
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C ib
30
FORWARD
REVERSE
1K
700
500
C ob
0.5 1
3
5
10
30
50
Reverse voltage, V R (V)
Page 3 of 6
100
300
MJE13005A( NPN )
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.8 Turn-Off time
Fig.7 Turn-On time
1
10
V CC = 125V
lC / lB = 5
T J = 25°C
0.5
V CC = 125V
lC / lB = 5
T J = 25°C
ts
5
2
Time,t (µs)
Time,t (µs)
tr
0.2
0.1
0.05
1
0.5
t d @ V BE(off) = 5V
0.3
0.02
tf
0.2
0.01
0.04
0.1
0.2
0.4
1
0.1
0.04
4
2
0.1
Collector current , l C (A)
0.2
0.5
1
2
Collector current , l C (A)
Fig.9 Test conditions for dynamic performance
RESISTIVE
SWITCHING
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
+5V
V CC
1N4933
33Ω
+125V
MJE210
Mr826*
TEST CIRCUITS
0.001 µF
33Ω
5V
PW
1N4933
2N222
lC
lB
5.1kΩ
+5V
1kΩ
T.U.T.
1N4933
0.02 µF 270Ω
47Ω
½W
NOTE
PW and V cc Adjusted for Desired l C
RB Adjusted for Desired l B1
V CE
-4.0V
MJE200
100Ω
V CC = 20V
V clamp = 300 Vdc
GAP for 200 µH / 20A
L coil = 200 µH
TEST WAVEFORMS
t f UNCLAMPED ≈ t 2
l C(pk)
t
25 µs
t 1 ADJUSTED TO
OBTAIN l C
t1 ≈
tf
L COil (l C PK )
V CC
V CE
V CE or
V clamp
t2 ≈
L COil (l C PK )
V clamp
t
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V CC = 125V
R C = 62Ω
D1 = 1N5820 or Equiv.
R B = 22Ω
+10V
t f CLAMPED
lC
D1
51Ω
+5V
Coil Data :
Ferroxcube Core #6656
Full Bobbin (~16 Turns) #16
TIME
SCOPE
RB
* SELECTED FOR ≥1kV
1KΩ
t1
DUT
V clamp
68Ω
2N2905
CIRCUIT
VALUES
RC
RB
1KΩ
DUTY CYCLE ≤ 10%
t r ,t f ≤ 10ns
L
t2
Page 4 of 6
0
Test Equipment
Scope-Tektronics
475 or Equivalent
-8V
t r , t f < 10 ns
Duty Cycle = 1.0%
R B and R C adjusted
for desired l B and l C
4
MJE13005A( NPN )
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.10 Typical thermal response【Z th(j-c) (t)】
Transient thermal resistance
(Normalized)
1
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.07
0.1
P (pk)
0.05
Z th(j-c)(t) = r(t) R th(j-c)
R th(j-c) = 1.67°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t 1
T J(PK) - T C = P (pK) Z th(j-c)(t)
0.05
0.02
0.03
0.01
0.02
0.05
0.1
t2
DUTY CYCLE, D = t 1 /t 2
SINGLE PULSE
0.01
0.01 0.02
t1
0.2
0.5
1
5
2
10
20 50
100 200
500
1K
time,t (ms)
Fig.12 Reverse bias switching safe operating area
(RBSOA)
Fig.11 Forward bias safe operating area
(FBSOA)
4
10
T C ≤ 100°C
2
5 ms
Collector current , I C (A)
Collector current , I C (A)
5
500 µs
dc
1
0.5
1 ms
0.2
Bonding wire limited
0.1
Thermally limited
T C = 25°C (single pulse)
0.05
Second breardown limited
0.02
0.01
T j = 150°C
l B1 = 2.0A
3
2
V B1(off) = 9V
1
5V
MJE13005A
3V
1.5V
MJE13005A
0
5
7
10
20
30
50 70 100
0
200 300 500
Collector - Emitter voltage, V CE (V)
200
300
400
500
600
700
800
Collector - Emitter voltage, V CE (V)
FORWARD BIAS
REVERSE BLAS
There are two limitations on the power handling ability
of a transistor:average junction temperature and second
breakdown. Safe operating area curves indicate l C - V CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Fig.11 is based on T C = 25°C ; T J(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when T C ≥ 25°C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Fig.11 may be found at
any case temperature by using the appropriate curve on
Fig.13.
T J(pk) may be calculated from the data in Fig.10. At high
case temperatures, thermal limitations will reduce the
power that can be handled to values less than the
limitations mposed by second breakdown.
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100
For inductive loads, high voltage and high current
must be sustained simultaneously during turn-off, in
most cases, with the base to emitter junction reverse
biased. Under these conditions the collector voltage
must be held to a safe level at or below a specific value
of collector current. This can be accomplished by several
means such as active clamping, RC snubbing, load line
shaping, etc. The safe level for these devices is specified
as Reverse Bias Safe Operating Area and repesents the
voltage-current conditions during reverse biased turn-off.
This rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode. Fig.12
gives the complete RBSOA characteristics.
Page 5 of 6
MJE13005A( NPN )
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.13 Forward bias power derating
Power derating factor
1
SECOND BREAKDOWN
DERATING
0.8
0.6
THERMAL
DERATING
0.4
0.2
0
20
40
60
80
100
120
140
160
Case temperature , T C (°C)
TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
4.70 (0.185)
4.44 (0.1754)
3.91 (0.154)
3.74 (0.148)
1.39 (0.055)
1.14 (0.045)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
1
PIN
2
16.13 (0.635)
15.87 (0.625)
3
4.06 (0.160)
3.56 (0.140)
15.32 (0.603)
14.55 (0.573)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
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14.22 (0.560)
13.46 (0.530)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
Page 6 of 6
0.56 (0.022)
0.36 (0.014)