ONSEMI MJE5740G

MJE5740, MJE5742
MJE5742 is a Preferred Device
NPN Silicon Power
Darlington Transistors
The MJE5740 and MJE5742 Darlington transistors are designed for
high−voltage power switching in inductive circuits.
Features
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• Pb−Free Packages are Available*
POWER DARLINGTON
TRANSISTORS
8 AMPERES
300−400 VOLTS
80 WATTS
Applications
•
•
•
•
•
Small Engine Ignition
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
MAXIMUM RATINGS
Rating
Symbol
Collector−Emitter Voltage
Value
Unit
VCEO(sus)
MJE5740
MJE5742
Collector−Emitter Voltage
Vdc
300
400
VCEV
MJE5740
MJE5742
≈ 100
Vdc
≈ 50
600
800
MARKING
DIAGRAM
Emitter−Base Voltage
VEB
8
Vdc
Collector Current
− Continuous
− Peak (Note 1)
IC
ICM
8
16
Adc
Base Current
− Continuous
− Peak (Note 1)
IB
IBM
2.5
5
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25°C
PD
2
16
W
W/_C
MJE574xG
Total Device Dissipation @ TC = 25_C
Derate above 25°C
PD
80
640
W
W/_C
AY WW
TJ, Tstg
−65 to +150
_C
Operating and Storage Junction
Temperature Range
1
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
1.25
_C/W
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
_C/W
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
TL
275
_C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
2
3
TO−220AB
CASE 221A−09
STYLE 1
MJE574x
G
A
Y
WW
= Device Code
x = 0 or 2
= Pb−Free Package
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 6
1
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MJE5740/D
MJE5740, MJE5742
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VCEO(sus)
300
400
−
−
−
−
Vdc
Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)
ICEV
−
−
−
−
1
5
mAdc
Emitter Cutoff Current (VEB = 8 Vdc, IC = 0)
IEBO
−
−
75
mAdc
OFF CHARACTERISTICS (Note 2)
Collector−Emitter Sustaining Voltage
(IC = 50 mA, IB = 0)
MJE5740
MJE5742
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
Clamped Inductive SOA with Base Reverse Biased
IS/b
See Figure 6
RBSOA
See Figure 7
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 0.5 Adc, VCE = 5 Vdc)
(IC = 4 Adc, VCE = 5 Vdc)
hFE
50
200
100
400
−
−
−
Collector−Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc)
Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc)
Collector−Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc, TC = 100_C)
VCE(sat)
−
−
−
−
−
−
2
3
2.2
Vdc
Base−Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc)
Base−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc)
Base−Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc, TC = 100_C)
VBE(sat)
−
−
−
−
−
−
2.5
3.5
2.4
Vdc
Vf
−
−
2.5
Vdc
td
−
0.04
−
ms
tr
−
0.5
−
ms
ts
−
8
−
ms
tf
−
2
−
ms
tsv
−
4
−
ms
tc
−
2
−
ms
Diode Forward Voltage (Note 3) (IF = 5 Adc)
SWITCHING CHARACTERISTICS
Typical Resistive Load (Table 1)
Delay Time
(VCC = 250 Vdc, IC(pk) = 6 A
IB1 = IB2 = 0.25 A, tp = 25 ms,
Duty Cycle v 1%)
Rise Time
Storage Time
Fall Time
Inductive Load, Clamped (Table 1)
Voltage Storage Time
Crossover Time
(IC(pk) = 6 A, VCE(pk) = 250 Vdc
IB1 = 0.06 A, VBE(off) = 5 Vdc)
2. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2%.
3. The internal Collector−to−Emitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the
Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.
ORDERING INFORMATION
Device
MJE5740
MJE5740G
MJE5742
MJE5742G
Package
Shipping
TO−220
TO−220
(Pb−Free)
TO−220
TO−220
(Pb−Free)
http://onsemi.com
2
50 Units / Rail
MJE5740, MJE5742
TYPICAL CHARACTERISTICS
POWER DERATING FACTOR (%)
100
IC(pk)
SECOND BREAKDOWN DERATING
80
VCE(pk)
90% VCE(pk)
IC
tsv
90% IC
trv
tfi
tti
60
tc
THERMAL DERATING
VCE
40
10% VCE(pk)
IB
90% IB1
10%
IC(pk)
2% IC
20
0
0
20
40
120
60
80
100
TC, CASE TEMPERATURE (°C)
140
160
TIME
Figure 1. Power Derating
Figure 2. Inductive Switching Measurements
2.4
150°C
1000
hFE , DC CURRENT GAIN
VBE, BASE−EMITTER VOLTAGE (VOLTS)
2000
VCE = 5 V
+25 °C
−55 °C
100
10
0.1
1
2
IC, COLLECTOR CURRENT (AMPS)
5
2.2
1.8
−55 °C
1.6
1.4
+25 °C
1.2
+150°C
1
0.8
0.6
0.4
10
hFE = 20
2
Figure 3. DC Current Gain
0.2
0.5
1
2
5
IC, COLLECTOR CURRENT (AMPS)
Figure 4. Base−Emitter Voltage
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3
10
MJE5740, MJE5742
Table 1. Test Conditions for Dynamic Performance
RESISTIVE
SWITCHING
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
+5 V
TEST CIRCUITS
0.001 mF
PW
DUTY CYCLE ≤ 10%
tr, tf ≤ 10 ns
1
k
68
L
IB
1
k 2N2905
47
1/2
W
COIL DATA:
FERROXCUBE CORE #6656
FULL BOBBIN (~16 TURNS) #16
100
MR826
*
T.U.T.
RC
TUT
Vclamp
IC
RB
1
+5 Vk
NOTE:
PW and VCC Adjusted for Desired IC
RB Adjusted for Desired IB1
CIRCUIT
VALUES
+VCC
MJE21
0
33 1N493
3
2N222
2
1N493
3
0.02 mF 270
VCC
33
1N493
3
5.1
k
51
*SELECTED FOR ≥ 1 kV
D
1
VCE
−4 V
MJE20
0
− VBE(off)
VCC = 30 V
VCE(pk) = 250 Vdc
IC(pk) = 6 A
GAP FOR 200 mH/20 A
Lcoil = 200 mH
tf
CLAMPED
IC(pk)
VCE
tf
t1 ≈
VCEOR
Vclamp
TIME
t2 ≈
t
t2
Lcoil (IC
pk)
VCC
Lcoil (IC
TEST EQUIPMENT
SCOPE−TEKTRONICS
475 OR EQUIVALENT
Vclamp
hFE = 20
1.4
1.2
1
−55 °C
0.8
+25 °C
0.6
+150°C
0.4
0.2
0.1
0.2
0.5
1
2
5
IC, COLLECTOR CURRENT (AMPS)
Figure 5. Inductive Switching Measurements
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4
25 ms
0
− 9.2 V
tr, tf < 10 ns
DUTY CYCLE = 1%
RB AND RC ADJUSTED
FOR DESIRED IB AND IC
pk)
1.8
1.6
VCC = 250 V
D1 = 1N5820 OR EQUIV.
+10 V
t1 ADJUSTED TO
OBTAIN IC
t
t1
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
TEST WAVEFORMS
OUTPUT WAVEFORMS
IC
SCOPE
RB
10
MJE5740, MJE5742
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
REVERSE BIAS
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TC = 25_C; T J(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ≥ 25_C. Second breakdown limitations do
not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 6 may be found at
any case temperature by using the appropriate curve on
Figure 1.
For inductive loads, high voltage and high current must be
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current condition allowable
during reverse biased turnoff. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 7 gives the complete RBSOA
characteristics.
16
16
10
8
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
The Safe Operating Area figures shown in Figures 6 and 7 are specified ratings for these devices under the test conditions shown.
100 ms
3
10 ms
5ms
1
0.5
0.3
BONDING WIRE LIMIT
1ms
dc
THERMAL LIMIT
(SINGLE PULSE)
0.1
SECOND BREAKDOWN LIMIT
MJE5742
0.05 CURVES APPLY BELOW RATED VCEO MJE5740
0.02
5
10
20
50
200
100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
14
12
10
8
4
MJE5742
MJE5740
2
0
400
VBE(off) ≤ 5 V
TJ = 100°C
6
0
Figure 6. Forward Bias Safe Operating Area
100
200
300
400
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 7. Reverse Bias Safe Operating Area
RESISTIVE SWITCHING PERFORMANCE
10
tr
7
ts
5
0.3
0.2
t, TIME (s)
μ
t, TIME (s)
μ
1
0.7
0.5
VCC = 250 V
IB1 = IB2
IC/IB = 20
td
0.1
3
2
1
0.07
0.05
0.7
0.5
0.03
0.02
0.2
0.3
0.2
0.2 0.3
0.3
0.5 0.7
1
2
3
5
7
10
VCC = 250 V
IB1 = IB2
IC/IB = 20
tf
0.5 0.7
1
2
3
5
7
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 8. Turn−On Time
Figure 9. Turn−Off Time
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5
10
500
MJE5740, MJE5742
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−09
ISSUE AA
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−− 0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and
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local Sales Representative.
MJE5740/D