MUR8100E D

MUR8100E, MUR880E
MUR8100E is a Preferred Device
SWITCHMODEt
Power Rectifiers
Ultrafast “E’’ Series with High Reverse
Energy Capability
The MUR8100 and MUR880E diodes are designed for use in
switching power supplies, inverters and as free wheeling diodes.
Features
• 20 mJ Avalanche Energy Guaranteed
• Excellent Protection Against Voltage Transients in Switching
•
•
•
•
•
•
•
•
•
Inductive Load Circuits
Ultrafast 75 Nanosecond Recovery Time
175°C Operating Junction Temperature
Popular TO−220 Package
Epoxy Meets UL 94 V−0 @ 0.125 in.
Low Forward Voltage
Low Leakage Current
High Temperature Glass Passivated Junction
Reverse Voltage to 1000 V
Pb−Free Packages are Available*
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ULTRAFAST RECTIFIERS
8.0 A, 800 V − 1000 V
1
4
3
4
TO−220AC
CASE 221B
1
3
Mechanical Characteristics:
MARKING DIAGRAM
• Case: Epoxy, Molded
• Weight: 1.9 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
AY WWG
U8xxxE
KA
A
Y
WW
G
U8xxxE
KA
=
=
=
=
=
Assembly Location
Year
Work Week
Pb−Free Package
Device Code
xxx = 100 or 80
= Diode Polarity
ORDERING INFORMATION
Device
Package
Shipping
MUR8100E
TO−220
50 Units / Rail
TO−220
(Pb−Free)
50 Units / Rail
TO−220
50 Units / Rail
TO−220
(Pb−Free)
50 Units / Rail
MUR8100EG
MUR880E
MUR880EG
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
June, 2008 − Rev. 4
1
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MUR8100E/D
MUR8100E, MUR880E
MAXIMUM RATINGS
Rating
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MUR880E
MUR8100E
Average Rectified Forward Current
(Rated VR, TC = 150°C) Total Device
VRRM
VRWM
VR
Value
Unit
V
800
1000
IF(AV)
8.0
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC = 150°C)
IFM
16
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
100
A
TJ, Tstg
−65 to +175
°C
Operating Junction and Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance, Junction−to−Case
Symbol
Value
Unit
RqJC
2.0
°C/W
Symbol
Value
Unit
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 8.0 A, TC = 150°C)
(iF = 8.0 A, TC = 25°C)
vF
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, TC = 100°C)
(Rated DC Voltage, TC = 25°C)
iR
Maximum Reverse Recovery Time
(IF = 1.0 A, di/dt = 50 A/ms)
(IF = 0.5 A, iR = 1.0 A, IREC = 0.25 A)
trr
Controlled Avalanche Energy
(See Test Circuit in Figure 6)
WAVAL
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
1.5
1.8
500
25
100
75
20
V
mA
ns
mJ
MUR8100E, MUR880E
100
10,000
70
IR, REVERSE CURRENT ( mA)
1000
50
30
10
100
175°C
150°C
10
100°C
1.0
0.1
TJ = 25°C
0.01
TJ = 175°C
7.0
0
100°C
5.0
200
400
25°C
600
800
1000
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current*
3.0
2.0
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
20
1.0
0.7
0.5
0.3
0.2
0.1
0.6
0.8
1.0
1.2
1.4
1.6
dc
6.0
SQUARE WAVE
5.0
4.0
3.0
2.0
1.0
0
160
150
170
Figure 1. Typical Forward Voltage
Figure 3. Current Derating, Case
8.0
7.0
dc
6.0
SQUARE WAVE
4.0
3.0
dc
2.0
SQUARE WAVE
0
20
7.0
vF, INSTANTANEOUS VOLTAGE (VOLTS)
RqJA = 16°C/W
RqJA = 60°C/W
(No Heat Sink)
0
8.0
TC, CASE TEMPERATURE (°C)
9.0
1.0
RATED VR APPLIED
9.0
140
10
5.0
10
1.8
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
0.4
I F(AV) , AVERAGE FORWARD CURRENT (AMPS)
* The curves shown are typical for the highest voltage device in the voltage
* grouping. Typical reverse current for lower voltage selections can be
* estimated from these same curves if VR is sufficiently below rated VR.
40
60
80
100
120
140
160
180
200
180
14
TJ = 175°C
12
SQUARE WAVE
10
dc
8.0
6.0
4.0
2.0
0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
TA, AMBIENT TEMPERATURE (°C)
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 4. Current Derating, Ambient
Figure 5. Power Dissipation
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3
9.0
10
MUR8100E, MUR880E
+VDD
IL
40 mH COIL
BVDUT
VD
ID
MERCURY
SWITCH
ID
IL
DUT
S1
VDD
t0
Figure 6. Test Circuit
ǒ
BV
2
DUT
W
[ 1 LI LPK
AVAL
2
V
BV
DUT DD
Ǔ
t2
t
Figure 7. Current−Voltage Waveforms
The unclamped inductive switching circuit shown in
Figure 6 was used to demonstrate the controlled avalanche
capability of the new “E’’ series Ultrafast rectifiers. A
mercury switch was used instead of an electronic switch to
simulate a noisy environment when the switch was being
opened.
When S1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the VDD power supply while the diode is in
EQUATION (1):
t1
breakdown (from t1 to t2) minus any losses due to finite
component resistances. Assuming the component resistive
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the VDD voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S1 was closed,
Equation (2).
The oscilloscope picture in Figure 8, shows the
MUR8100E in this test circuit conducting a peak current of
one ampere at a breakdown voltage of 1300 V, and using
Equation (2) the energy absorbed by the MUR8100E is
approximately 20 mjoules.
Although it is not recommended to design for this
condition, the new “E’’ series provides added protection
against those unforeseen transient viruses that can produce
unexplained random failures in unfriendly environments.
500V
50mV
CH1
CH2
A
20ms
953 V
VERT
CHANNEL 2:
IL
0.5 AMPS/DIV.
CHANNEL 1:
VDUT
500 VOLTS/DIV.
EQUATION (2):
2
W
[ 1 LI LPK
AVAL
2
TIME BASE:
20 ms/DIV.
1
CH1
ACQUISITIONS
SAVEREF SOURCE
CH2
217:33 HRS
STACK
REF
REF
Figure 8. Current−Voltage Waveforms
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4
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.1
0.1
0.07
0.05
P(pk)
0.05
0.01
t1
0.03
0.02
0.01
0.01
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
Figure 9. Thermal Response
1000
TJ = 25°C
300
100
30
10
1.0
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 10. Typical Capacitance
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5
ZqJC(t) = r(t) RqJC
RqJC = 1.5°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
50
t, TIME (ms)
C, CAPACITANCE (pF)
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
MUR8100E, MUR880E
100
100
200
500
1000
MUR8100E, MUR880E
PACKAGE DIMENSIONS
TO−220 TWO−LEAD
CASE 221B−04
ISSUE E
C
B
Q
F
T
S
DIM
A
B
C
D
F
G
H
J
K
L
Q
R
S
T
U
4
A
1
3
U
H
K
L
D
G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
R
J
INCHES
MIN
MAX
0.595
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.190
0.210
0.110
0.130
0.014
0.025
0.500
0.562
0.045
0.060
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
MILLIMETERS
MIN
MAX
15.11
15.75
9.65
10.29
4.06
4.82
0.64
0.89
3.61
4.09
4.83
5.33
2.79
3.30
0.36
0.64
12.70
14.27
1.14
1.52
2.54
3.04
2.04
2.79
1.14
1.39
5.97
6.48
0.000
1.27
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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MUR8100E/D