KERSEMI MUR8100EG

MUR8100E, MUR880E
Power Rectifiers
Ultrafast “E’’ Series with High Reverse
Energy Capability
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The MUR8100 and MUR880E diodes are designed for use in
switching power supplies, inverters and as free wheeling diodes.
Features
ULTRAFAST RECTIFIERS
8.0 A, 800 V − 1000 V
• 20 mJ Avalanche Energy Guaranteed
• Excellent Protection Against Voltage Transients in Switching
•
•
•
•
•
•
•
•
•
1
4
Inductive Load Circuits
Ultrafast 75 Nanosecond Recovery Time
175°C Operating Junction Temperature
Popular TO−220 Package
Epoxy Meets UL 94 V−0 @ 0.125 in.
Low Forward Voltage
Low Leakage Current
High Temperature Glass Passivated Junction
Reverse Voltage to 1000 V
Pb−Free Package is Available
3
4
TO−220AC
CASE 221B
1
3
MARKING DIAGRAM
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
•
U8x0E
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Marking: U880E, U8100E
U8x0E = Device Code
x
= 8 or 10
ORDERING INFORMATION
Device
Package
Shipping†
MUR8100E
TO−220
50 Units / Rail
TO−220
(Pb−Free)
50 Units / Rail
TO−220
50 Units / Rail
MUR8100EG
MUR880E

1
MUR8100E/D
MUR8100E, MUR880E
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MUR880E
MUR8100E
VRRM
VRWM
VR
Average Rectified Forward Current
(Rated VR, TC = 150°C)
Total Device
IF(AV)
8.0
A
Peak Repetitive Forward Current
(Rated VR, Square Wave,
20 kHz, TC = 150°C)
IFM
16
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
100
A
TJ, Tstg
−65 to +175
°C
Operating Junction and Storage Temperature Range
V
800
1000
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance, Junction−to−Case
Symbol
Value
Unit
RJC
2.0
°C/W
Symbol
Value
Unit
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 8.0 A, TC = 150°C)
(iF = 8.0 A, TC = 25°C)
vF
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, TC = 100°C)
(Rated DC Voltage, TC = 25°C)
iR
Maximum Reverse Recovery Time
(IF = 1.0 A, di/dt = 50 A/s)
(IF = 0.5 A, iR = 1.0 A, IREC = 0.25 A)
trr
V
1.5
1.8
A
500
25
ns
100
75
Controlled Avalanche Energy
(See Test Circuit in Figure 6)
WAVAL
1. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2.0%.
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2
20
mJ
MUR8100E, MUR880E
100
10,000
70
IR , REVERSE CURRENT ( A)
1000
50
30
10
100
175°C
150°C
10
100°C
1.0
0.1
TJ = 25°C
0.01
TJ = 175°C
7.0
0
100°C
5.0
200
400
25°C
600
800
1000
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current*
3.0
2.0
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
20
1.0
0.7
0.5
0.3
0.2
0.1
0.6
0.8
1.0
1.2
1.4
1.6
dc
6.0
SQUARE WAVE
5.0
4.0
3.0
2.0
1.0
0
150
160
170
Figure 1. Typical Forward Voltage
Figure 3. Current Derating, Case
8.0
7.0
dc
6.0
SQUARE WAVE
4.0
3.0
dc
2.0
SQUARE WAVE
0
20
7.0
vF, INSTANTANEOUS VOLTAGE (VOLTS)
RJA = 16°C/W
RJA = 60°C/W
(No Heat Sink)
0
8.0
TC, CASE TEMPERATURE (°C)
9.0
1.0
RATED VR APPLIED
9.0
140
10
5.0
10
1.8
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
0.4
I F(AV) , AVERAGE FORWARD CURRENT (AMPS)
* The curves shown are typical for the highest voltage device in the voltage
* grouping. Typical reverse current for lower voltage selections can be
* estimated from these same curves if VR is sufficiently below rated VR.
40
60
80
100
120
140
160
180
200
180
14
TJ = 175°C
12
SQUARE WAVE
10
dc
8.0
6.0
4.0
2.0
0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
TA, AMBIENT TEMPERATURE (°C)
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 4. Current Derating, Ambient
Figure 5. Power Dissipation
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3
9.0
10
MUR8100E, MUR880E
+VDD
IL
40 H COIL
BVDUT
VD
ID
MERCURY
SWITCH
ID
IL
DUT
S1
VDD
t0
Figure 6. Test Circuit
BV
2
DUT
W
1 LI LPK
AVAL
2
BV
–V
DUT DD
t2
t
Figure 7. Current−Voltage Waveforms
breakdown (from t1 to t2) minus any losses due to finite
component resistances. Assuming the component resistive
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the VDD voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S1 was closed,
Equation (2).
The oscilloscope picture in Figure 8, shows the
MUR8100E in this test circuit conducting a peak current of
one ampere at a breakdown voltage of 1300 V, and using
Equation (2) the energy absorbed by the MUR8100E is
approximately 20 mjoules.
Although it is not recommended to design for this
condition, the new “E’’ series provides added protection
against those unforeseen transient viruses that can produce
unexplained random failures in unfriendly environments.
The unclamped inductive switching circuit shown in
Figure 6 was used to demonstrate the controlled avalanche
capability of the new “E’’ series Ultrafast rectifiers. A
mercury switch was used instead of an electronic switch to
simulate a noisy environment when the switch was being
opened.
When S1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the VDD power supply while the diode is in
EQUATION (1):
t1
CH1
CH2
500V
50mV
A
20s
953 V
VERT
CHANNEL 2:
IL
0.5 AMPS/DIV.
CHANNEL 1:
VDUT
500 VOLTS/DIV.
EQUATION (2):
2
W
1 LI LPK
AVAL
2
TIME BASE:
20 s/DIV.
1
CH1
ACQUISITIONS
SAVEREF SOURCE
CH2
217:33 HRS
STACK
REF
REF
Figure 8. Current−Voltage Waveforms
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4
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.1
0.1
0.07
0.05
P(pk)
0.05
0.01
t1
0.03
0.02
0.01
0.01
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
Figure 9. Thermal Response
1000
TJ = 25°C
300
100
30
10
1.0
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 10. Typical Capacitance
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5
ZJC(t) = r(t) RJC
RJC = 1.5°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) ZJC(t)
50
t, TIME (ms)
C, CAPACITANCE (pF)
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
MUR8100E, MUR880E
100
100
200
500
1000
MUR8100E, MUR880E
PACKAGE DIMENSIONS
TO−220
CASE 221B−04
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
B
Q
F
S
T
DIM
A
B
C
D
F
G
H
J
K
L
Q
R
S
T
U
4
A
1
U
3
H
K
L
R
D
G
J
http://onsemi.com
6
INCHES
MIN
MAX
0.595
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.190
0.210
0.110
0.130
0.018
0.025
0.500
0.562
0.045
0.060
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
MILLIMETERS
MIN
MAX
15.11
15.75
9.65
10.29
4.06
4.82
0.64
0.89
3.61
3.73
4.83
5.33
2.79
3.30
0.46
0.64
12.70
14.27
1.14
1.52
2.54
3.04
2.04
2.79
1.14
1.39
5.97
6.48
0.000
1.27
MUR8100E/D