MUR180E, MUR1100E SWITCHMODE Power Rectifiers Ultrafast “E” Series with High Reverse Energy Capability These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features • 10 mjoules Avalanche Energy Guaranteed • Excellent Protection Against Voltage Transients in Switching • • • • • • • http://onsemi.com ULTRAFAST RECTIFIERS 1.0 AMPERES, 800−1000 VOLTS Inductive Load Circuits Ultrafast 75 Nanosecond Recovery Time 175°C Operating Junction Temperature Low Forward Voltage Low Leakage Current High Temperature Glass Passivated Junction Reverse Voltage to 1000 V These are Pb−Free Devices* Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 0.4 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal PLASTIC AXIAL LEAD CASE 59 Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds • Shipped in Plastic Bags; 1,000 per Bag • Available Tape and Reel; 5,000 per Reel, by Adding a “RL’’ Suffix to MARKING DIAGRAM the Part Number • Polarity: Cathode Indicated by Polarity Band MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol MUR180E MUR1100E VRRM VRWM VR Value Unit V 800 1000 Average Rectified Forward Current (Note 1) (Square Wave Mounting Method #3 Per Note 3) IF(AV) 1.0 @ TA = 95°C A Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) IFSM 35 A TJ, Tstg −65 to +175 °C Operating Junction Temperature and Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. A MUR1x0E YYWW G G A = Assembly Location MUR1x0E = Device Code x 8 or 10 Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 May, 2013 − Rev. 4 1 Publication Order Number: MUR180E/D MUR180E, MUR1100E THERMAL CHARACTERISTICS Characteristics Maximum Thermal Resistance, Junction−to−Ambient Symbol Value Unit RqJA See Note 3 °C/W Value Unit ELECTRICAL CHARACTERISTICS Characteristics Symbol Maximum Instantaneous Forward Voltage (Note 2) (iF = 1.0 A, TJ = 150°C) (iF = 1.0 A, TJ = 25°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TJ = 100°C) (Rated dc Voltage, TJ = 25°C) iR Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 Amp/ms) (IF = 0.5 A, iR = 1.0 Amp, IREC = 0.25 A) trr Maximum Forward Recovery Time (IF = 1.0 A, di/dt = 100 Amp/ms, Recovery to 1.0 V) tfr 75 ns WAVAL 10 mJ IRM 1.7 A Controlled Avalanche Energy (See Test Circuit in Figure 6) Typical Peak Reverse Recovery Current (IF = 1.0 A, di/dt = 50 A/ms) 1.50 1.75 600 10 100 75 V mA ns 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. ORDERING INFORMATION Device Package MUR180E Axial Lead* MUR180EG Axial Lead* MUR180ERL Axial Lead* MUR180ERLG Axial Lead* MUR1100E Axial Lead* MUR1100EG Axial Lead* MUR1100ERL Axial Lead* MUR1100ERLG Axial Lead* Shipping† 1000 Units / Bag 5000 / Tape & Reel 1000 Units / Bag 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *These packages are inherently Pb−Free. http://onsemi.com 2 MUR180E, MUR1100E ELECTRICAL CHARACTERISTICS 1000 IR, REVERSE CURRENT (m A) 20 10 7.0 3.0 TJ = 175°C 25°C 2.0 10 100°C 1.0 25°C 0.1 100°C 0.01 1.0 0 100 200 300 400 500 600 700 800 0.7 VR, REVERSE VOLTAGE (VOLTS) 0.5 Figure 2. Typical Reverse Current* 900 1000 * The curves shown are typical for the highest voltage device in the grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR. 0.3 0.2 IF(AV) , AVERAGE FORWARD CURRENT (AMPS) i F , INSTANTANEOUS FORWARD CURRENT (AMPS) 5.0 TJ = 175°C 100 0.1 0.07 0.05 0.03 0.02 0.01 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 5.0 4.0 RATED VR RqJA = 50°C/W 3.0 2.0 dc SQUARE WAVE 1.0 0 0 vF, INSTANTANEOUS VOLTAGE (VOLTS) 50 Figure 1. Typical Forward Voltage 100 150 200 250 TA, AMBIENT TEMPERATURE (°C) 5.0 10 I (CAPACITIVELOAD) PK + 20 I AV 4.0 20 5.0 TJ = 25°C C, CAPACITANCE (pF) PF(AV) , AVERAGE POWER DISSIPATION (WATTS) Figure 3. Current Derating (Mounting Method #3 Per Note 3) 3.0 dc TJ = 175°C 2.0 SQUARE WAVE 1.0 10 7.0 5.0 3.0 2.0 0 0 0.5 1.0 1.5 2.0 2.5 0 10 20 30 40 IF(AV), AVERAGE FORWARD CURRENT (AMPS) VR, REVERSE VOLTAGE (VOLTS) Figure 4. Power Dissipation Figure 5. Typical Capacitance http://onsemi.com 3 50 MUR180E, MUR1100E +VDD IL 40 mH COIL BVDUT VD ID MERCURY SWITCH ID IL DUT S1 VDD t0 t1 Figure 6. Test Circuit ǒ BV 2 DUT W [ 1 LI LPK AVAL 2 BV –V DUT DD t Figure 7. Current−Voltage Waveforms component resistances. Assuming the component resistive elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). The oscilloscope picture in Figure 8, shows the information obtained for the MUR8100E (similar die construction as the MUR1100E Series) in this test circuit conducting a peak current of one ampere at a breakdown voltage of 1300 V, and using Equation (2) the energy absorbed by the MUR8100E is approximately 20 mjoules. Although it is not recommended to design for this condition, the new “E’’ series provides added protection against those unforeseen transient viruses that can produce unexplained random failures in unfriendly environments. The unclamped inductive switching circuit shown in Figure 6 was used to demonstrate the controlled avalanche capability of the new “E’’ series Ultrafast rectifiers. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite EQUATION (1): t2 Ǔ 500V 50mV CH1 CH2 A 20ms 953 V VERT CHANNEL 2: IL 0.5 AMPS/DIV. CHANNEL 1: VDUT 500 VOLTS/DIV. EQUATION (2): 2 W [ 1 LI LPK AVAL 2 1 CH1 ACQUISITIONS SAVEREF SOURCE CH2 217:33 HRS STACK REF REF Figure 8. Current−Voltage Waveforms http://onsemi.com 4 TIME BASE: 20 ms/DIV. MUR180E, MUR1100E NOTE 3 − AMBIENT MOUNTING DATA Data shown for thermal resistance, junction−to−ambient (RqJA) for the mountings shown is to be used as typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. TYPICAL VALUES FOR RqJA IN STILL AIR Mounting Method 1 2 RqJA Lead Length, L 1/8 1/4 1/2 52 65 72 67 80 87 Units °C/W °C/W 50 °C/W 3 MOUNTING METHOD 1 L L ÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉ MOUNTING METHOD 2 ÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉ L L Vector Pin Mounting ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ MOUNTING METHOD 3 L = 3/8 ″ Board Ground Plane P.C. Board with 1−1/2 ″ X 1−1/2 ″ Copper Surface http://onsemi.com 5 MUR180E, MUR1100E PACKAGE DIMENSIONS AXIAL LEAD CASE 59−10 ISSUE U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO−41 OUTLINE SHALL APPLY 4. POLARITY DENOTED BY CATHODE BAND. 5. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION. B K D DIM A B D F K F A POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) F INCHES MIN MAX 0.161 0.205 0.079 0.106 0.028 0.034 −−− 0.050 1.000 −−− MILLIMETERS MIN MAX 4.10 5.20 2.00 2.70 0.71 0.86 −−− 1.27 25.40 −−− STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE K ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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