MUR480E, MUR4100E SWITCHMODE Power Rectifiers Ultrafast “E’’ Series with High Reverse Energy Capability http://onsemi.com . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state- of- the- art devices have the following features: ULTRAFAST RECTIFIER 4.0 AMPERES 800-1000 VOLTS • 20 mJ Avalanche Energy Guaranteed • Excellent Protection Against Voltage Transients in Switching • • • • • • Inductive Load Circuits Ultrafast 75 Nanosecond Recovery Time 175°C Operating Junction Temperature Low Forward Voltage Low Leakage Current High Temperature Glass Passivated Junction Reverse Voltage to 1000 Volts Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.1 gram (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: • • • • 220°C Max. for 10 Seconds, 1/16″ from case Shipped in plastic bags, 5,000 per bag Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to the part number Polarity: Cathode indicated by Polarity Band Marking: MUR480E, MUR4100E AXIAL LEAD CASE 267-05 (DO-201AD) STYLE 1 MARKING DIAGRAM MUR 4x0E MAXIMUM RATINGS Rating Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MUR480E MUR4100E VRRM VRWM VR Average Rectified Forward Current (Square Wave) (Mounting Method #3 Per Note 2) IF(AV) Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Operating Junction and Storage Temperature Range Semiconductor Components Industries, LLC, 2003 April, 2003 - Rev. 4 TJ, Tstg Value Unit MUR4x0E = Device Code x = 8 or 10 V 800 1000 4.0 @ TA = 35°C A 70 A ORDERING INFORMATION Device °C -65 to +175 1 Package Shipping MUR480E Axial Lead 5000 Units/Bag MUR480ERL Axial Lead 1500/Tape & Reel MUR4100E Axial Lead 5000 Units/Bag MUR4100ERL Axial Lead 1500/Tape & Reel Publication Order Number: MUR480E/D MUR480E, MUR4100E THERMAL CHARACTERISTICS Rating Maximum Thermal Resistance, Junction to Ambient Symbol Value Unit RθJA See Note 2 °C/W Symbol Max Unit ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 1) (iF = 3.0 Amps, TJ = 150°C) (iF = 3.0 Amps, TJ = 25°C) (iF = 4.0 Amps, TJ = 25°C) vF Volts Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 150°C) (Rated dc Voltage, TJ = 25°C) iR Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amp/µs) (IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 Amp) trr Maximum Forward Recovery Time (IF = 1.0 Amp, di/dt = 100 Amp/µs, Recovery to 1.0 V) tfr 75 ns WAVAL 20 mJ 1.53 1.75 1.85 µA 900 25 ns 100 75 Controlled Avalanche Energy (See Test Circuit in Figure 6) 1. Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%. http://onsemi.com 2 MUR480E, MUR4100E MUR480E, MUR4100E IR, REVERSE CURRENT ( A) 20 25°C TJ = 175°C 10 100°C 7.0 3.0 2.0 100°C 25°C *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR. 0 100 200 300 400 500 600 700 800 VR, REVERSE VOLTAGE (VOLTS) 0.7 Figure 2. Typical Reverse Current* 900 1000 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Rated VR RJA = 28°C/W 8.0 6.0 dc 4.0 SQUARE WAVE 2.0 0 50 100 150 200 vF, INSTANTANEOUS VOLTAGE (VOLTS) TA, AMBIENT TEMPERATURE (°C) Figure 1. Typical Forward Voltage Figure 3. Current Derating (Mounting Method #3 Per Note 2) 10 250 70 60 50 TJ = 175°C 9.0 10 0 2 8.0 5.0 7.0 6.0 C, CAPACITANCE (pF) PF(AV) , AVERAGE POWER DISSIPATION (WATTS) TJ = 175°C 1.0 IF(AV) , AVERAGE FORWARD CURRENT (AMPS) i F , INSTANTANEOUS FORWARD CURRENT (AMPS) 5.0 1000 400 200 100 40 20 10 4.0 2.0 1.0 0.4 0.2 0.1 0.04 0.02 0.01 0.004 0.002 0.001 10 5.0 (Capacitive IPK =20 IAV Load) 4.0 dc 3.0 SQUAREWAVE 2.0 0 1.0 2.0 3.0 4.0 TJ = 25°C 30 20 10 9.0 8.0 7.0 1.0 0 40 5.0 0 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 4. Power Dissipation 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Typical Capacitance http://onsemi.com 3 50 MUR480E, MUR4100E +VDD IL 40 H COIL BVDUT VD ID MERCURY SWITCH ID IL DUT S1 VDD t0 Figure 6. Test Circuit BV 2 DUT W 1 LI LPK AVAL 2 BV –V DUT DD t2 t Figure 7. Current-Voltage Waveforms The unclamped inductive switching circuit shown in Figure 6 was used to demonstrate the controlled avalanche capability of the new “E’’ series Ultrafast rectifiers. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite EQUATION (1): t1 component resistances. Assuming the component resistive elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). The oscilloscope picture in Figure 8, shows the information obtained for the MUR8100E (similar die construction as the MUR4100E Series) in this test circuit conducting a peak current of one ampere at a breakdown voltage of 1300 volts, and using Equation (2) the energy absorbed by the MUR8100E is approximately 20 mjoules. Although it is not recommended to design for this condition, the new “E’’ series provides added protection against those unforeseen transient viruses that can produce unexplained random failures in unfriendly environments. 500V 50mV CH1 CH2 A 20s 953 V VERT CHANNEL 2: IL 0.5 AMPS/DIV. CHANNEL 1: VDUT 500 VOLTS/DIV. EQUATION (2): 2 W 1 LI LPK AVAL 2 TIME BASE: 20 s/DIV. 1 CH1 ACQUISITIONS SAVEREF SOURCE CH2 217:33 HRS STACK REF REF Figure 8. Current-Voltage Waveforms http://onsemi.com 4 MUR480E, MUR4100E NOTE 2 - AMBIENT MOUNTING DATA Data shown for thermal resistance junction-to-ambient (RθJA) for the mountings shown is to be used as typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. TYPICAL VALUES FOR RθJA IN STILL AIR Mounting Method 1 2 RθJA Lead Length, L (IN) 1/8 1/4 1/2 3/4 50 51 53 55 58 59 61 63 Units °C/W °C/W 28 °C/W 3 MOUNTING METHOD 1 P.C. Board Where Available Copper Surface area is small. ÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉ L L MOUNTING METHOD 2 Vector Push-In Terminals T-28 ÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉ L L MOUNTING METHOD 3 P.C. Board with 1-1/2 ″ x 1-1/2 ″ Copper Surface ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ L = 1/2 ″ Board Ground Plane http://onsemi.com 5 MUR480E, MUR4100E PACKAGE DIMENSIONS AXIAL LEAD CASE 267-05 (DO-201AD) ISSUE G K D A 1 2 B K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B D K INCHES MIN MAX 0.287 0.374 0.189 0.209 0.047 0.051 1.000 −−− MILLIMETERS MIN MAX 7.30 9.50 4.80 5.30 1.20 1.30 25.40 −−− STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE http://onsemi.com 6 MUR480E, MUR4100E Notes http://onsemi.com 7 MUR480E, MUR4100E SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: [email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800-282-9855 Toll Free USA/Canada http://onsemi.com 8 MUR480E/D