MUR180E, MUR1100E MUR1100E is a Preferred Device SWITCHMODE Power Rectifiers Ultrafast “E” Series with High Reverse Energy Capability http://onsemi.com . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: ULTRAFAST RECTIFIERS 1.0 AMPERES 800–1000 VOLTS • 10 mjoules Avalanche Energy Guaranteed • Excellent Protection Against Voltage Transients in Switching • • • • • • Inductive Load Circuits Ultrafast 75 Nanosecond Recovery Time 175°C Operating Junction Temperature Low Forward Voltage Low Leakage Current High Temperature Glass Passivated Junction Reverse Voltage to 1000 Volts Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 0.4 gram (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: • • • • AXIAL LEAD CASE 059–10 PLASTIC 220°C Max. for 10 Seconds, 1/16″ from case Shipped in plastic bags, 1000 per bag Available Tape and Reeled, 5000 per reel, by adding a “RL’’ suffix to the part number Polarity: Cathode Indicated by Polarity Band Marking: MUR180E, MUR1100E MARKING DIAGRAM MUR1x0E MUR1x0E = Device Code x = 8 or 10 MAXIMUM RATINGS Rating Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MUR180E MUR1100E VRRM VRWM VR Average Rectified Forward Current (Note 1.) (Square Wave Mounting Method #3 Per Note 3.) IF(AV) Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) IFSM Operating Junction Temperature and Storage Temperature Range TJ, Tstg Value Unit V ORDERING INFORMATION 800 1000 Device 1.0 @ TA = 95°C A 35 A August, 2002 – Rev. 1 Shipping MUR180E Axial Lead 1000 Units/Bag MUR180ERL Axial Lead 5000/Tape & Reel MUR1100E Axial Lead 1000 Units/Bag MUR1100ERL Axial Lead 5000/Tape & Reel °C –65 to +175 Preferred devices are recommended choices for future use and best overall value. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2.0%. Semiconductor Components Industries, LLC, 2002 Package 1 Publication Order Number: MUR180E/D MUR180E, MUR1100E THERMAL CHARACTERISTICS Rating Symbol Value Unit RJA See Note 3. °C/W Maximum Thermal Resistance, Junction to Ambient ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2.) (iF = 1.0 Amp, TJ = 150°C) (iF = 1.0 Amp, TJ = 25°C) vF Volts Maximum Instantaneous Reverse Current (Note 2.) (Rated dc Voltage, TJ = 100°C) (Rated dc Voltage, TJ = 25°C) iR Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amp/s) (IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 Amp) trr Maximum Forward Recovery Time (IF = 1.0 Amp, di/dt = 100 Amp/s, Recovery to 1.0 V) tfr 75 ns WAVAL 10 mJ 1.50 1.75 A 600 10 ns 100 75 Controlled Avalanche Energy (See Test Circuit in Figure 6) 2. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2.0%. http://onsemi.com 2 MUR180E, MUR1100E ELECTRICAL CHARACTERISTICS 1000 IR, REVERSE CURRENT ( A) 20 10 7.0 3.0 TJ = 175°C 2.0 25°C 100°C 10 100°C 1.0 25°C 0.1 0.01 1.0 0 100 200 300 400 500 600 700 800 900 1000 0.7 VR, REVERSE VOLTAGE (VOLTS) 0.5 Figure 2. Typical Reverse Current* 0.3 * The curves shown are typical for the highest voltage device in the grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR. 0.2 IF(AV) , AVERAGE FORWARD CURRENT (AMPS) i F , INSTANTANEOUS FORWARD CURRENT (AMPS) 5.0 TJ = 175°C 100 0.1 0.07 0.05 0.03 0.02 0.01 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 5.0 4.0 RATED VR RJA = 50°C/W 3.0 2.0 dc SQUARE WAVE 1.0 0 vF, INSTANTANEOUS VOLTAGE (VOLTS) 0 50 100 150 200 250 TA, AMBIENT TEMPERATURE (°C) Figure 1. Typical Forward Voltage 5.0 10 I (CAPACITIVELOAD) PK 20 I 20 5.0 TJ = 25°C AV 4.0 3.0 C, CAPACITANCE (pF) PF(AV) , AVERAGE POWER DISSIPATION (WATTS) Figure 3. Current Derating (Mounting Method #3 Per Note 1) dc TJ = 175°C 2.0 SQUARE WAVE 1.0 0 10 7.0 5.0 3.0 0 0.5 1.0 1.5 2.0 2.5 2.0 0 10 20 30 40 IF(AV), AVERAGE FORWARD CURRENT (AMPS) VR, REVERSE VOLTAGE (VOLTS) Figure 4. Power Dissipation Figure 5. Typical Capacitance http://onsemi.com 3 50 MUR180E, MUR1100E +VDD IL 40 mH COIL BVDUT VD ID MERCURY SWITCH S1 ID IL DUT VDD t0 t1 Figure 6. Test Circuit BV 2 DUT W 1 LI LPK AVAL 2 BV –V DUT DD t Figure 7. Current–Voltage Waveforms The unclamped inductive switching circuit shown in Figure 6 was used to demonstrate the controlled avalanche capability of the new “E’’ series Ultrafast rectifiers. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite EQUATION (1): t2 CH1 CH2 component resistances. Assuming the component resistive elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). The oscilloscope picture in Figure 8, shows the information obtained for the MUR8100E (similar die construction as the MUR1100E Series) in this test circuit conducting a peak current of one ampere at a breakdown voltage of 1300 volts, and using Equation (2) the energy absorbed by the MUR8100E is approximately 20 mjoules. Although it is not recommended to design for this condition, the new “E’’ series provides added protection against those unforeseen transient viruses that can produce unexplained random failures in unfriendly environments. 500V 50mV A 20s 953 V VERT CHANNEL 2: IL 0.5 AMPS/DIV. CHANNEL 1: VDUT 500 VOLTS/DIV. EQUATION (2): 2 W 1 LI LPK AVAL 2 1 CH1 ACQUISITIONS SAVEREF SOURCE CH2 217:33 HRS STACK REF REF Figure 8. Current–Voltage Waveforms http://onsemi.com 4 TIME BASE: 20 s/DIV. MUR180E, MUR1100E NOTE 3. — AMBIENT MOUNTING DATA Data shown for thermal resistance junction to ambient (RJA) for the mountings shown is to be used as typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. TYPICAL VALUES FOR RJA IN STILL AIR Mounting Method 1 2 RJA Lead Length, L 1/4 1/2 1/8 52 65 72 67 80 87 Units °C/W °C/W 50 °C/W 3 MOUNTING METHOD 1 L L ÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉ MOUNTING METHOD 2 ÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉ L L Vector Pin Mounting ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ MOUNTING METHOD 3 L = 3/8 ″ Board Ground Plane P.C. Board with 1–1/2 ″ X 1–1/2 ″ Copper Surface http://onsemi.com 5 MUR180E, MUR1100E PACKAGE DIMENSIONS MINI MOSORB CASE 59–10 ISSUE S B K D F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 59-04 OBSOLETE, NEW STANDARD 59-09. 4. 59-03 OBSOLETE, NEW STANDARD 59-10. 5. ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO-41 OUTLINE SHALL APPLY 6. POLARITY DENOTED BY CATHODE BAND. 7. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION. DIM A B D F K A F INCHES MIN MAX 0.161 0.205 0.079 0.106 0.028 0.034 --0.050 1.000 --- K http://onsemi.com 6 MILLIMETERS MIN MAX 4.10 5.20 2.00 2.70 0.71 0.86 --1.27 25.40 --- MUR180E, MUR1100E Notes http://onsemi.com 7 MUR180E, MUR1100E SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: [email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 2–9–1 Kamimeguro, Meguro–ku, Tokyo, Japan 153–0051 Phone: 81–3–5773–3850 Email: [email protected] ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800–282–9855 Toll Free USA/Canada http://onsemi.com 8 MUR180E/D