Si4392DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.00975 at VGS = 10 V 12.5 0.01375 at VGS = 4.5 V 10.0 • Extremely Low Qgd for Low Switching Losses • TrenchFET® Power MOSFET • 100 % Rg Tested Available RoHS* COMPLIANT APPLICATIONS • High-Side DC/DC Conversion - Notebook - Server SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D D G Top View S Ordering Information: Si4392DY-T1 Si4392DY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)a Parameter Symbol Limits Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Pulse Avalanche Current Avalanche Energy Maximum Power Dissipation a L = 0.1 mH TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Unit V 12.5 ID 10 IDM 50 IS 2.7 IAS 30 A 45 EAS mJ 3.0 PD W 1.9 TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGSa Parameter Symbol Typical Maximum Maximum Junction-to-Ambient RthJA 33 42 Maximum Junction-to-Foot (Drain) RthJF 16 20 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board, t 10 s. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72151 S11-0209-Rev. F, 14-Feb-11 www.vishay.com 1 Si4392DY Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. 1.0 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 µA 3.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 5 On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea RDS(on) Forward Transconductancea Diode Forward Voltagea VDS 5 V, VGS = 10 V µA 30 A VGS = 10 V, ID = 12.5 A 0.008 0.00975 VGS = 4.5 V, ID = 10.0 A 0.011 0.01375 gfs VDS = 15 V, ID = 12.5 A 40 VSD IS = 2.7 A, VGS = 0 V 0.73 1.1 10 15 VDS = 15 V, VGS = 4.5 V, ID = 12.5 A 3.5 S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance 0.5 Rg Turn-On Delay Time td(on) Rise Time VDD = 15 V, RL = 15 ID 1 A, VGEN = 10 V, Rg = 6 tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC 2.6 IF = 2.7 A, dI/dt = 100 A/µs 1.6 2.7 15 25 5 10 45 70 8 15 30 60 ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 50 50 VGS = 10 V thru 4 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 30 3V 20 10 30 20 TC = 125 °C 10 25 °C - 55 °C 0 0 www.vishay.com 2 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.5 4.0 Document Number: 72151 S11-0209-Rev. F, 14-Feb-11 Si4392DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1800 Ciss 1500 0.024 C - Capacitance (pF) RDS(on) - On-Resistance () 0.030 0.018 VGS = 4.5 V 0.012 VGS = 10 V 1200 900 600 Coss 0.006 300 Crss 0 0.000 0 10 20 30 40 0 50 6 12 24 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 1.8 6 VDS = 15 V ID = 12.5 A 5 VGS = 10 V ID = 12.5 A 1.6 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 18 4 3 2 1.4 1.2 1.0 0.8 1 0.6 - 50 0 0 3 6 9 12 15 - 25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 0.040 50 TJ = 150 °C R DS(on) - On-Resistance () I S - Source Current (A) ID = 12.5 A 10 1 TJ = 25 °C 0.1 0.0 0.032 0.024 0.016 0.008 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 72151 S11-0209-Rev. F, 14-Feb-11 10 www.vishay.com 3 Si4392DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.6 30 0.4 ID = 250 µA 18 Power (W) VGS(th) Variance (V) 24 0.2 0.0 - 0.2 12 - 0.4 6 - 0.6 - 0.8 - 50 0 - 25 0 25 50 75 100 125 10- 2 150 10- 1 1 TJ - Temperature (°C) 10 100 600 Time (s) Single Pulse Power Threshold Voltage 100 Limited by R DS(on)* ID - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 0.1 0.01 0.1 10 s TC = 25 °C Single Pulse 1 DC 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 70 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72151 S11-0209-Rev. F, 14-Feb-11 Si4392DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72151 Document Number: 72151 S11-0209-Rev. 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