Si4392DY Datasheet

Si4392DY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
30
RDS(on) ()
ID (A)
0.00975 at VGS = 10 V
12.5
0.01375 at VGS = 4.5 V
10.0
• Extremely Low Qgd for Low Switching Losses
• TrenchFET® Power MOSFET
• 100 % Rg Tested
Available
RoHS*
COMPLIANT
APPLICATIONS
• High-Side DC/DC Conversion
- Notebook
- Server
SO-8
S
1
8
D
S
2
7
D
S
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6
D
G
4
5
D
D
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Top View
S
Ordering Information: Si4392DY-T1
Si4392DY-T1-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)a
Parameter
Symbol
Limits
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
a
L = 0.1 mH
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Unit
V
12.5
ID
10
IDM
50
IS
2.7
IAS
30
A
45
EAS
mJ
3.0
PD
W
1.9
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGSa
Parameter
Symbol
Typical
Maximum
Maximum Junction-to-Ambient
RthJA
33
42
Maximum Junction-to-Foot (Drain)
RthJF
16
20
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board, t 10 s.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72151
S11-0209-Rev. F, 14-Feb-11
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1
Si4392DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
1.0
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = 250 µA
3.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
5
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistancea
RDS(on)
Forward Transconductancea
Diode Forward Voltagea
VDS 5 V, VGS = 10 V
µA
30
A
VGS = 10 V, ID = 12.5 A
0.008
0.00975
VGS = 4.5 V, ID = 10.0 A
0.011
0.01375
gfs
VDS = 15 V, ID = 12.5 A
40
VSD
IS = 2.7 A, VGS = 0 V
0.73
1.1
10
15
VDS = 15 V, VGS = 4.5 V, ID = 12.5 A
3.5

S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
0.5
Rg
Turn-On Delay Time
td(on)
Rise Time
VDD = 15 V, RL = 15 
ID  1 A, VGEN = 10 V, Rg = 6 
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
2.6
IF = 2.7 A, dI/dt = 100 A/µs
1.6
2.7
15
25
5
10
45
70
8
15
30
60

ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
50
VGS = 10 V thru 4 V
40
I D - Drain Current (A)
I D - Drain Current (A)
40
30
3V
20
10
30
20
TC = 125 °C
10
25 °C
- 55 °C
0
0
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2
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
3.5
4.0
Document Number: 72151
S11-0209-Rev. F, 14-Feb-11
Si4392DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1800
Ciss
1500
0.024
C - Capacitance (pF)
RDS(on) - On-Resistance ()
0.030
0.018
VGS = 4.5 V
0.012
VGS = 10 V
1200
900
600
Coss
0.006
300
Crss
0
0.000
0
10
20
30
40
0
50
6
12
24
30
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
1.8
6
VDS = 15 V
ID = 12.5 A
5
VGS = 10 V
ID = 12.5 A
1.6
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
18
4
3
2
1.4
1.2
1.0
0.8
1
0.6
- 50
0
0
3
6
9
12
15
- 25
0
Qg - Total Gate Charge (nC)
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
0.040
50
TJ = 150 °C
R DS(on) - On-Resistance ()
I S - Source Current (A)
ID = 12.5 A
10
1
TJ = 25 °C
0.1
0.0
0.032
0.024
0.016
0.008
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72151
S11-0209-Rev. F, 14-Feb-11
10
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Si4392DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.6
30
0.4
ID = 250 µA
18
Power (W)
VGS(th) Variance (V)
24
0.2
0.0
- 0.2
12
- 0.4
6
- 0.6
- 0.8
- 50
0
- 25
0
25
50
75
100
125
10- 2
150
10- 1
1
TJ - Temperature (°C)
10
100
600
Time (s)
Single Pulse Power
Threshold Voltage
100
Limited by
R DS(on)*
ID - Drain Current (A)
10
1 ms
10 ms
1
100 ms
1s
0.1
0.01
0.1
10 s
TC = 25 °C
Single Pulse
1
DC
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 70 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10- 4
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 72151
S11-0209-Rev. F, 14-Feb-11
Si4392DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72151
Document Number: 72151
S11-0209-Rev. F, 14-Feb-11
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Revision: 02-Oct-12
1
Document Number: 91000