VISHAY SI4362DY-T1

Si4362DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFET
D Optimized for “Low Side” Synchronous
Rectifier Operation
D 100% Rg Tested
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
ID (A)
0.0045 @ VGS = 10 V
20
APPLICATIONS
0.0055 @ VGS = 4.5 V
19
D DC/DC Converters
D Synchronous Rectifiers
SO-8
D
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
G
Top View
Ordering Information: Si4362DY
Si4362DY-T1 (with Tape and Reel)
Si4362DY—E3 (Lead Free)
Si4362DY-T1—E3 (Lead Free with Tape and Reel)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)a
Parameter
Symbol
Limits
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
"12
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
TA = 70_C
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)a
TA = 25_C
Maximum Power Dissipationa
TA = 70_C
Operating Junction and Storage Temperature Range
Unit
20
ID
15
IDM
60
IS
2.9
A
3.5
PD
W
2.2
TJ, Tstg
−55 to 150
THERMAL RESISTANCE RATINGSa
Parameter
Symbol
Typical
Maximum
Maximum Junction-to-Ambient
RthJA
29
35
Maximum Junction-to-Foot (Drain)
RthJF
13
16
Unit
_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board, t v 10 sec
Document Number: 71628
S-40762—Rev. E, 19-Apr-04
www.vishay.com
1
Si4362DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
VGS(th)
VDS = VGS, ID = 250 mA
0.6
IGSS
VDS = 0 V, VGS = "12 V
"100
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55_C
5
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
nA
mA
30
VDS w 5 V, VGS = 10 V
rDS(on)
V
A
VGS = 10 V, ID = 20 A
0.0035
0.0045
VGS = 4.5 V, ID = 19 A
0.0042
0.0055
gfs
VDS = 15 V, ID = 20 A
90
VSD
IS = 2.9 A, VGS = 0 V
0.75
1.1
42
55
W
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
RG
Turn-On Delay Time
nC
12.8
7.7
1.3
2.2
td(on)
17
30
tr
14
25
158
230
43
65
50
80
Rise Time
Turn-Off Delay Time
VDS = 15 V, VGS = 4.5 V, ID = 20 A
0.5
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, Rg = 6 W
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = 2.9 A, di/dt = 100 A/ms
W
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
60
60
50
40
40
I D − Drain Current (A)
I D − Drain Current (A)
VGS = 10 thru 3 V
50
30
20
2V
10
2
4
6
8
VDS − Drain-to-Source Voltage (V)
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2
20
TC = 125_C
10
0
0
30
10
0
0.0
25_C
0.5
1.0
−55_C
1.5
2.0
2.5
3.0
VGS − Gate-to-Source Voltage (V)
Document Number: 71628
S-40762—Rev. E, 19-Apr-04
Si4362DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
8000
0.008
C − Capacitance (pF)
r DS(on) − On-Resistance ( W )
0.010
0.006
VGS = 4.5 V
0.004
VGS = 10 V
Ciss
6000
4000
2000
0.002
Coss
Crss
0.000
0
0
10
20
30
40
50
0
6
Gate Charge
rDS(on) − On-Resiistance
(Normalized)
V GS − Gate-to-Source Voltage (V)
30
VGS = 10 V
ID = 20 A
1.4
3
2
1
1.2
1.0
0.8
0
0
10
20
30
40
0.6
−50
50
−25
0
Source-Drain Diode Forward Voltage
50
75
100
125
150
On-Resistance vs. Gate-to-Source Voltage
0.025
r DS(on) − On-Resistance ( W )
50
TJ = 150_C
10
TJ = 25_C
0.020
0.015
0.010
ID = 20 A
0.005
0.000
1
0.00
25
TJ − Junction Temperature (_C)
Qg − Total Gate Charge (nC)
I S − Source Current (A)
24
On-Resistance vs. Junction Temperature
1.6
VDS = 15 V
ID = 20 A
4
18
VDS − Drain-to-Source Voltage (V)
ID − Drain Current (A)
5
12
0.2
0.4
0.6
0.8
VSD − Source-to-Drain Voltage (V)
Document Number: 71628
S-40762—Rev. E, 19-Apr-04
1.0
1.2
0
2
4
6
8
10
VGS − Gate-to-Source Voltage (V)
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Si4362DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
60
ID = 250 mA
50
40
−0.0
Power (W)
V GS(th) Variance (V)
0.2
−0.2
30
−0.4
20
−0.6
10
−0.8
−50
−25
0
25
50
75
100
125
150
0
10−2
10−1
TJ − Temperature (_C)
1
10
100
600
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 67_C/W
3. TJM − TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10−4
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
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4
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71628
S-40762—Rev. E, 19-Apr-04