Si4362DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% Rg Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 APPLICATIONS 0.0055 @ VGS = 4.5 V 19 D DC/DC Converters D Synchronous Rectifiers SO-8 D S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View Ordering Information: Si4362DY Si4362DY-T1 (with Tape and Reel) Si4362DY—E3 (Lead Free) Si4362DY-T1—E3 (Lead Free with Tape and Reel) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)a Parameter Symbol Limits Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "12 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range Unit 20 ID 15 IDM 60 IS 2.9 A 3.5 PD W 2.2 TJ, Tstg −55 to 150 THERMAL RESISTANCE RATINGSa Parameter Symbol Typical Maximum Maximum Junction-to-Ambient RthJA 29 35 Maximum Junction-to-Foot (Drain) RthJF 13 16 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board, t v 10 sec Document Number: 71628 S-40762—Rev. E, 19-Apr-04 www.vishay.com 1 Si4362DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max VGS(th) VDS = VGS, ID = 250 mA 0.6 IGSS VDS = 0 V, VGS = "12 V "100 VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55_C 5 Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea nA mA 30 VDS w 5 V, VGS = 10 V rDS(on) V A VGS = 10 V, ID = 20 A 0.0035 0.0045 VGS = 4.5 V, ID = 19 A 0.0042 0.0055 gfs VDS = 15 V, ID = 20 A 90 VSD IS = 2.9 A, VGS = 0 V 0.75 1.1 42 55 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance RG Turn-On Delay Time nC 12.8 7.7 1.3 2.2 td(on) 17 30 tr 14 25 158 230 43 65 50 80 Rise Time Turn-Off Delay Time VDS = 15 V, VGS = 4.5 V, ID = 20 A 0.5 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = 2.9 A, di/dt = 100 A/ms W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 60 60 50 40 40 I D − Drain Current (A) I D − Drain Current (A) VGS = 10 thru 3 V 50 30 20 2V 10 2 4 6 8 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 20 TC = 125_C 10 0 0 30 10 0 0.0 25_C 0.5 1.0 −55_C 1.5 2.0 2.5 3.0 VGS − Gate-to-Source Voltage (V) Document Number: 71628 S-40762—Rev. E, 19-Apr-04 Si4362DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 8000 0.008 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.010 0.006 VGS = 4.5 V 0.004 VGS = 10 V Ciss 6000 4000 2000 0.002 Coss Crss 0.000 0 0 10 20 30 40 50 0 6 Gate Charge rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 30 VGS = 10 V ID = 20 A 1.4 3 2 1 1.2 1.0 0.8 0 0 10 20 30 40 0.6 −50 50 −25 0 Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.025 r DS(on) − On-Resistance ( W ) 50 TJ = 150_C 10 TJ = 25_C 0.020 0.015 0.010 ID = 20 A 0.005 0.000 1 0.00 25 TJ − Junction Temperature (_C) Qg − Total Gate Charge (nC) I S − Source Current (A) 24 On-Resistance vs. Junction Temperature 1.6 VDS = 15 V ID = 20 A 4 18 VDS − Drain-to-Source Voltage (V) ID − Drain Current (A) 5 12 0.2 0.4 0.6 0.8 VSD − Source-to-Drain Voltage (V) Document Number: 71628 S-40762—Rev. E, 19-Apr-04 1.0 1.2 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si4362DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 60 ID = 250 mA 50 40 −0.0 Power (W) V GS(th) Variance (V) 0.2 −0.2 30 −0.4 20 −0.6 10 −0.8 −50 −25 0 25 50 75 100 125 150 0 10−2 10−1 TJ − Temperature (_C) 1 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 67_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71628 S-40762—Rev. E, 19-Apr-04