Si4392DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFETt FEATURES D Extremely Low Qgd WFET Technology for Switching Losses D TrenchFETr Power MOSFET D 100% Rg Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.00975 @ VGS = 10 V 12.5 0.01375 @ VGS = 4.5 V 10.0 APPLICATIONS D High-Side DC/DC Conversion − Notebook − Server SO-8 D S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View Ordering Information: Si4392DY Si4392DY-T1 (with Tape and Reel) Si4392DY—E3 (Lead (Pb)-Free) Si4392DY-T1—E3 (Lead (Pb)-Free with Tape and Reel) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)a Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current Continuous Source Current (Diode Conduction)a TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range Symbol Limits VDS 30 VGS "20 Unit 12.5 ID 10 IDM 50 IS 2.7 A 3.0 PD W 1.9 TJ, Tstg −55 to 150 THERMAL RESISTANCE RATINGSa Parameter Typical Maximum Maximum Junction-to-Ambient RthJA 33 42 Maximum Junction-to-Foot (Drain) RthJF 16 20 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board, t v 10 sec Document Number: 72151 S-41427—Rev. D, 26-Jul-04 www.vishay.com 1 Si4392DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS Typ Max Unit 3.0 V VDS = 0 V, VGS = "20 V "100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea 30 VDS w 5 V, VGS = 10 V rDS(on) mA A VGS = 10 V, ID = 12.5 A 0.008 0.00975 VGS = 4.5 V, ID = 10.0 A 0.011 0.01375 gfs VDS = 15 V, ID = 12.5 A 40 VSD IS = 2.7 A, VGS = 0 V 0.73 1.1 10 15 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time nC 3.5 2.6 1.6 2.7 td(on) 15 25 tr 5 10 45 70 8 15 30 60 Rise Time Turn-Off Delay Time VDS = 15 V, VGS = 4.5 V, ID = 12.5 A 0.5 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = 2.7 A, di/dt = 100 A/ms W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 50 50 VGS = 10 thru 4 V 40 I D − Drain Current (A) I D − Drain Current (A) 40 30 3V 20 10 30 20 TC = 125_C 10 25_C −55_C 0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS − Gate-to-Source Voltage (V) Document Number: 72151 S-41427—Rev. D, 26-Jul-04 Si4392DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 1800 Ciss 1500 0.024 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.030 0.018 VGS = 4.5 V 0.012 VGS = 10 V 0.006 1200 900 Coss 600 Crss 300 0.000 0 0 10 20 30 40 50 0 6 ID − Drain Current (A) Gate Charge 24 30 On-Resistance vs. Junction Temperature 1.8 VDS = 15 V ID = 12.5 A 5 VGS = 10 V ID = 12.5 A 1.6 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 18 VDS − Drain-to-Source Voltage (V) 6 4 3 2 1 1.4 1.2 1.0 0.8 0 0 3 6 9 12 0.6 −50 15 −25 0 Qg − Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.040 1 r DS(on) − On-Resistance ( W ) TJ = 150_C 10 0.1 0.0 25 TJ − Junction Temperature (_C) 50 I S − Source Current (A) 12 TJ = 25_C 0.032 ID = 12.5 A 0.024 0.016 0.008 0.000 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Document Number: 72151 S-41427—Rev. D, 26-Jul-04 1.2 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si4392DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.6 30 24 ID = 250 mA 0.2 18 Power (W) V GS(th) Variance (V) 0.4 −0.0 −0.2 12 −0.4 6 −0.6 −0.8 −50 0 −25 0 25 50 75 100 125 10−2 150 10−1 1 10 100 600 Time (sec) TJ − Temperature (_C) 100 Safe Operating Area, Junction-to-Case Limited by rDS(on) I D − Drain Current (A) 10 1 ms 10 ms 1 100 ms 0.1 1s 10 s TC = 25_C Single Pulse dc 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 70_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72151 S-41427—Rev. D, 26-Jul-04 Si4392DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 Document Number: 72151 S-41427—Rev. D, 26-Jul-04 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5