Si7392DP Datasheet

Si7392DP
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω)
ID (A)
0.00975 at VGS = 10 V
15
0.01375 at VGS = 4.5 V
13
PowerPAK SO-8
S
6.15 mm
APPLICATIONS
5.15 mm
1
S
2
G
4
D
8
D
• High-Side DC/DC Conversion
- Notebook
- Server
S
3
• Halogen-free According to IEC 61249-2-21
Definition
• Extremely Low Qgd for Low Switching Losses
• TrenchFET® Power MOSFET
• New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
• 100 % Rg Tested
• 100 % UIS Tested
• Complaint to RoHS Directive 2002/95/EC
D
G
7
D
6
D
5
Bottom View
S
Ordering Information: Si7392DP-T1-E3 (Lead (Pb)-free)
Si7392DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 20
TA = 25 °C
Continuous Drain Current (TJ = 150 °C)a
TA = 70 °C
ID
a
Continuous Source Current (Diode Conduction)
IS
Avalanche Current
IAS
Single-Pulse Avalanche Energy
Maximum Power Dissipationa
L = 0.1 mH
TA = 25 °C
TA = 70 °C
15
9
7
± 50
1.5
30
45
mJ
5
1.8
3.2
1.1
TJ, Tstg
Operating Junction and Storage Temperature Range
A
4.1
EAS
PD
V
12
IDM
Pulsed Drain Current
Unit
- 55 to 150
Soldering Recommendations (Peak Temperature)b, c
W
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)a
Maximum Junction-to-Case (Drain)
Symbol
t ≤ 10 s
Steady State
Steady State
RthJA
RthJC
Typical
Maximum
20
25
53
70
3.5
4.5
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72165
S11-0212-Rev. G, 14-Feb-11
www.vishay.com
1
Si7392DP
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
1.0
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = 250 µA
3.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 70 °C
5
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistancea
RDS(on)
Forward Transconductancea
Diode Forward Voltage
a
VDS ≥ 5 V, VGS = 10 V
µA
40
A
VGS = 10 V, ID = 15 A
0.008
0.00975
VGS = 4.5 V, ID = 13 A
0.011
0.01375
gfs
VDS = 15 V, ID = 15 A
40
VSD
IS = 4.1 A, VGS = 0 V
0.75
1.1
10
15
Ω
S
V
b
Dynamic
Qg
Total Gate Charge
VDS = 15 V, VGS = 4.5 V, ID = 15 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
2.6
Gate Resistance
Rg
1.6
2.7
td(on)
15
25
7
15
46
70
9
17
30
60
Turn-On Delay Time
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
3.5
IF = 2.7 A, dI/dt = 100 A/µs
Ω
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
50
VGS = 10 V thru 4 V
40
I D - Drain Current (A)
I D - Drain Current (A)
40
30
3V
20
30
20
TC = 125 °C
10
10
25 °C
- 55 °C
0
0
1
2
3
VDS - Drain-to-Source Voltage (V)
Output Characteristics
www.vishay.com
2
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 72165
S11-0212-Rev. G, 14-Feb-11
Si7392DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1800
Ciss
1500
0.024
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0.030
0.018
VGS = 4.5 V
0.012
1200
900
Coss
600
VGS = 10 V
0.006
Crss
300
0.000
0
0
10
20
30
40
50
0
6
ID - Drain Current (A)
12
30
Capacitance
6
1.8
VDS = 15 V
ID = 15 A
5
VGS = 10 V
ID = 15 A
1.6
R DS(on) - On-Resistance
(Normalized)
V GS - Gate-to-Source Voltage (V)
24
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
4
3
2
1
1.4
1.2
1.0
0.8
0
0
3
6
9
12
0.6
- 50
15
0
25
50
75
100
125
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
150
0.040
0.032
R DS(on) - On-Resistance (Ω)
TJ = 150 °C
10
1
TJ = 25 °C
0.1
0.0
- 25
Qg - Total Gate Charge (nC)
50
I S - Source Current (A)
18
ID = 15 A
0.024
0.016
0.008
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72165
S11-0212-Rev. G, 14-Feb-11
10
www.vishay.com
3
Si7392DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.6
200
0.4
0.2
Power (W)
V GS(th) Variance (V)
160
ID = 250 µA
0.0
- 0.2
120
80
- 0.4
40
- 0.6
- 0.8
- 50
0
- 25
0
25
50
75
100
125
150
10-3
10-2
10-1
1
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
10
100
Limited by
R DS(on)*
1 ms
I D - Drain Current (A)
10
10 ms
1
100 ms
1s
10 s
0.1
TC = 25 °C
Single Pulse
0.01
0.1
1
* VGS
DC
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which R DS(on) is specified
Safe Operating Area, Junction-to-Case
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 125 °C/W
3. T JM - T A = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
4
Document Number: 72165
S11-0212-Rev. G, 14-Feb-11
Si7392DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72165.
Document Number: 72165
S11-0212-Rev. G, 14-Feb-11
www.vishay.com
5
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000