Si7356ADP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.003 at VGS = 10 V 40 0.004 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 46 nC • Halogen-free available • Ultra-Low On-Resistance Using High Density TrenchFET Gen II • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • 100 % Rg Tested RoHS COMPLIANT PowerPAK SO-8 APPLICATIONS S 6.15 mm • Low-Side DC/DC Conversion - Notebook - Server - Workstation • Point-of-Load Conversion 5.15 mm 1 S 2 S 3 G 4 D 8 D D 7 D 6 D G 5 Bottom View S N-Channel MOSFET Ordering Information: Si7356ADP-T1-E3 (Lead (Pb)-free) Si7356ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID Continuous Source-Drain Diode Current Maximum Power Dissipation TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS PD TJ, Tstg Operating Junction and Storage Temperature Range Temperature)d, e Unit V 31b, c 25b, c 70 40 IDM Pulsed Drain Current Soldering Recommendations (Peak Limit 30 ± 20 40 32 A 4.9b, c 83 53 5.4b, c 3.4b, c - 55 to 150 260 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 18 1.0 Maximum 23 1.5 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 65 °C/W. Document Number: 73425 S-80439-Rev. B, 03-Mar-08 www.vishay.com 1 Si7356ADP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) Forward Transconductancea gfs V 31 mV/°C - 5.7 1.0 3.0 V ± 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 10 V 30 µA A VGS = 10 V, ID = 20 A 0.0024 0.003 VGS = 4.5 V, ID = 20 A 0.0032 0.004 VDS = 15 V, ID = 20 A 100 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 6215 VDS = 15 V, VGS = 0 V, f = 1 MHz 460 VDS = 15 V, VGS = 10 V, ID = 15 A VDS = 15 V, VGS = 4.5 V, ID = 15 A tr Rise Time td(off) Turn-Off Delay Time VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω tf Fall Time 96 145 46 70 20 nC 15 f = 1 MHz td(on) Turn-On Delay Time pF 825 0.5 1.0 1.5 25 40 18 30 95 150 31 50 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C 40 ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 70 IS = 5 A IF = 3 A, di/dt = 100 A/µs, TJ = 25 °C A 0.73 1.1 V 40 70 ns 40 70 nC 21 19 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73425 S-80439-Rev. B, 03-Mar-08 Si7356ADP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 70 1.2 VGS = 10 thru 4 V 1.0 I D - Drain Current (A) I D - Drain Current (A) 60 50 40 30 20 0.8 0.6 0.4 25 °C 0.2 10 TC = 125 °C 3V 0 0.0 0.3 0.6 0.9 - 55 °C 1.2 0.0 0.0 1.5 0.5 1.0 0.0040 8000 0.0036 6400 VGS = 4.5 V 0.0032 0.0028 VGS = 10 V 3200 0.0020 Coss Crss 0 40 50 60 0 5 ID - Drain Current (A) 10 10 1.6 8 1.4 VDS = 10 V VDS = 20 V 4 2 (Normalized) ID = 20 A VDS = 15 V 20 25 30 Capacitance R DS(on) - On-Resistance V GS - Gate-to-Source Voltage (V) 15 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 6 3.5 Ciss 1600 30 3.0 4800 0.0024 20 2.5 Transfer Characteristics C - Capacitance (pF) R DS(on) - On-Resistance (Ω) Output Characteristics 10 2.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 0 1.5 VGS = 4.5 V VGS = 10 V 1.2 1.0 0.8 0 0 20 40 60 Qg - Total Gate Charge (nC) Gate Charge Document Number: 73425 S-80439-Rev. B, 03-Mar-08 80 100 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si7356ADP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.020 R DS(on) - Drain-to-Source On-Resistance (Ω) 100 TJ = 150 °C I S - Source Current (A) 10 1 TJ = 25 °C 0.1 0.012 0.008 TJ = 125 °C 0.004 TJ = 25 °C 0.000 0.01 0.00 ID = 20 A 0.016 0.2 0.4 0.6 0.8 1.0 2 1.2 3 4 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 200 0.2 160 0.0 Power (W) VGS(th) Variance (V) 5 - 0.2 ID = 5 mA 120 80 - 0.4 - 0.6 - 0.8 - 50 40 ID = 250 µA - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 100 Limited by RDS(on)* 1 ms 10 ms I D - Drain Current (A) 10 100 ms 1 1s 10 s DC 0.1 TA = 25 °C Single Pulse 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73425 S-80439-Rev. B, 03-Mar-08 Si7356ADP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 155 ID - Drain Current (A) 124 93 62 Package Limited 31 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 100 2.5 80 2.0 60 1.5 Power (W) Power (W) Current Derating* 40 1.0 0.5 20 0.0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73425 S-80439-Rev. B, 03-Mar-08 www.vishay.com 5 Si7356ADP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 65 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73425. www.vishay.com 6 Document Number: 73425 S-80439-Rev. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000