Datasheet

AON6528
30V N-Channel AlphaMOS
General Description
Product Summary
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
VDS
ID (at VGS=10V)
30V
30A
RDS(ON) (at VGS=10V)
< 6.3mΩ
RDS(ON) (at VGS = 4.5V)
< 9.8mΩ
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
1
8
2
7
3
6
4
5
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
CurrentG
Pulsed Drain Current C
C
±20
V
23
A
21
IDSM
TA=70°C
Units
V
120
IDM
TA=25°C
Maximum
30
30
ID
TC=100°C
Continuous Drain
Current
G
Pin 1
PIN1
Avalanche Current
D
Top View
Bottom View
A
16
IAS
36
A
Avalanche energy L=0.01mH C
EAS
6
mJ
VDS Spike
VSPIKE
36
V
100ns
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
PD
TA=25°C
Rev 2.0: Aug. 2015
4.1
Steady-State
Steady-State
RθJA
RθJC
W
2.6
TJ, TSTG
Symbol
t ≤ 10s
W
10
PDSM
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
25
-55 to 150
Typ
24
53
3.5
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°C
Max
30
64
5
Units
°C/W
°C/W
°C/W
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AON6528
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS，ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
VGS=10V, VDS=15V, ID=20A
µA
5
1.4
0.7
Units
V
1
TJ=55°C
IGSS
Max
30
VDS=30V, VGS=0V
VGS(th)
Coss
Typ
1.8
100
nA
2.2
V
4.5
6.3
6
8.5
7.1
9.8
mΩ
1
V
30
A
91
0.7
mΩ
S
1037
pF
441
pF
61
pF
1.5
2.3
Ω
15.5
22
nC
6.8
10
nC
3.0
nC
Gate Drain Charge
3.6
nC
tD(on)
Turn-On DelayTime
5.5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
3.3
ns
18
ns
4.3
ns
IF=20A, dI/dt=500A/µs
12.7
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
17.2
ns
nC
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA ≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2.0: Aug. 2015
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Page 2 of 6
AON6528
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
VDS=5V
4.5V
80
80
7V
5V
4V
60
ID(A)
ID (A)
60
40
40
125°C
20
25°C
20
VGS=3.0V
0
0
0
1
2
3
4
0
5
10
2
3
4
5
6
Normalized On-Resistance
1.6
VGS=4.5V
8
RDS(ON) (mΩ)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
6
4
VGS=10V
2
VGS=10V
ID=20A
1.4
1.2
VGS=4.5V
ID=20A
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
15
1.0E+02
ID=20A
1.0E+01
40
1.0E+00
IS (A)
RDS(ON) (mΩ)
10
125°C
5
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
25°C
1.0E-04
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 2.0: Aug. 2015
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON6528
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1400
Ciss
Capacitance (pF)
VGS (Volts)
1200
VDS=15V
ID=20A
8
6
4
1000
800
600
Coss
400
2
200
0
Crss
0
0
5
10
15
20
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
200
1000.0
RDS(ON)
100µs
1ms
10ms
DC
1.0
TJ(Max)=150°C
TC=25°C
0.0
0.01
0.1
Power (W)
10µs
10.0
0.1
TJ(Max)=150°C
TC=25°C
160
10µs
100.0
ID (Amps)
5
17
5
2
10
120
80
40
1
10
100
0
0.0001
VDS (Volts)
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=5°C/W
PD
0.1
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 2.0: Aug. 2015
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Page 4 of 6
AON6528
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
Current rating ID(A)
Power Dissipation (W)
30
20
10
0
0
25
50
75
100
125
150
30
20
10
0
0
TCASE (°C)
Figure 12: Power De-rating (Note F)
25
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note F)
TA=25°C
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=64°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
1E-05
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 2.0: Aug. 2015
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Page 5 of 6
AON6528
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev 2.0: Aug. 2015
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6