MMBT2222

MMBT2222A
MMBT2222A
Surface Mount Si-Epi-Planar Switching Transistors
Si-Epi-Planar Schalttransistoren für die Oberflächenmontage
NPN
NPN
Version 2015-05-12
3
Type
Code
1
1.3±0.1
2.4 ±0.2
0.4
Power dissipation – Verlustleistung
+0.1
1.1 -0.2
2.9 ±0.1
+0.1
-0.05
2
1.9
250 mW
Plastic case
Kunststoffgehäuse
SOT-23
(TO-236)
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
±0.1
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Dimensions - Maße [mm]
1=B
2=E
3=C
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
MMBT2222A
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
B open
VCEO
40 V
Collector-Base-voltage – Kollektor-Basis-Spannung
E open
VCBO
75 V
Emitter-Base-voltage – Emitter-Basis-Spannung
C open
VEBO
6V
Power dissipation – Verlustleistung
Ptot
250 mW 1)
Collector current – Kollektorstrom (dc)
IC
600 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
hFE
hFE
hFE
hFE
35
50
75
100
–
–
–
–
–
–
–
300
hFE
40
–
–
2
DC current gain – Kollektor-Basis-Stromverhältnis )
IC
IC
IC
IC
=
=
=
=
0.1 mA,
1 mA,
10 mA,
150 mA,
IC = 500 mA,
VCE
VCE
VCE
VCE
=
=
=
=
10
10
10
10
V
V
V
V
VCE = 10 V 2)
MMBT2222A
h-Parameters at/bei VCE = 10 V, f = 1 kHz, IC = 1 mA / 10 mA
1
2
Small signal current gain
Kleinsignal-Stromverstärkung
MMBT2222A
hfe
75
–
375
Input impedance – Eingangs-Impedanz
MMBT2222A
hie
0.25 kΩ
–
1.25 kΩ
Output admittance – Ausgangs-Leitwert
MMBT2222A
hoe
25 µS
–
200 µS
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
MMBT2222A
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)
IC = 150 mA, IB = 15 mA
MMBT2222A
VCEsat
–
–
0.3 V
IC = 500 mA, IB = 50 mA
MMBT2222A
VCEsat
–
–
1.0 V
2
Base-Emitter saturation voltage – Basis-Sättigungsspannung )
IC = 150 mA, IB = 15 mA
MMBT2222A
VBEsat
0.65 V
–
1.2 V
IC = 500 mA, IB = 50 mA
MMBT2222A
VBEsat
–
–
2.0 V
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VCB = 60 V, (E open)
MMBT2222A
ICBO
–
–
10 nA
VCB = 60 V, Tj = 125°C, (E open)
MMBT2222A
ICBO
–
–
10 µA
IEB0
–
–-
100 nA
fT
250 MHz
–
–
CCBO
–
–
8 pF
CEBO
–
–
25 pf
F
–
–
4 dB
VCC = 3 V, VBE = 0.5 V
IC = 150 mA, IB1 = 15mA
td
–
–
10 ns
tr
–
–
25 ns
VCC = 3 V, IC = 150 mA,
IB1 = IB2 = 15 mA
ts
–
–
225 ns
tf
–
–
60 ns
Emitter-Base cutoff current – Emitter-Basis-Reststrom
VEB = 3 V, (C open)
MMBT2222A
Gain-Bandwidth Product – Transitfrequenz
VCE = 20 V, IC = 20 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Noise figure – Rauschzahl
VCE = 10 V, IC = 100 µA, RG = 1 kΩ, f = 1 kHz
MMBT2222A
Switching times – Schaltzeiten (between 10% and 90% levels)
delay time
rise time
storage time
fall time
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Marking - Stempelung
2
1
2
RthA
< 420 K/W 1)
MMBT2709A
MMBT2222A = 1P
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
http://www.diotec.com/
© Diotec Semiconductor AG