MMBT2907, MMBT2907A PNP Switching Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Version 2004-05-04 Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1 2.5 max 3 Type Code SOT-23 (TO-236) Weight approx. – Gewicht ca. 2 1 250 mW 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert 1.9 Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Dimensions / Maße in mm 1=B 2=E 3=C Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) MMBT2907 MMBT2907A 40 V 60 V Collector-Emitter-voltage B open - VCE0 Collector-Base-voltage E open - VCB0 60 V Emitter-Base-voltage C open - VEB0 5V Power dissipation – Verlustleistung Ptot 250 mW 1) Collector current – Kollektorstrom (dc) - IC 600 mA Peak Collector current – Kollektor-Spitzenstrom - ICM 800 mA Junction temp. – Sperrschichttemperatur Tj 150°C Storage temperature – Lagerungstemperatur TS - 65…+ 150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. - ICB0 - ICB0 – – – – 20 nA 10 nA - ICB0 – – 20 µA – – – – 400 mV 1.6 V – – – – 1.3 V 2.6 V Collector-Base cutoff current – Kollektorreststrom IE = 0, - VCB = 50 V MMBT2709 MMBT2709A IE = 0, - VCB = 50 V, Tj = 150°C Collector saturation volt. – Kollektor-Sättigungsspg. 1) - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA - VCEsat - VCEsat Base saturation voltage – Basis-Sättigungsspannung 1) - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA 1 - VBEsat - VBEsat ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 24 Switching Transistors MMBT2907, MMBT2907A Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. 1 DC current gain – Kollektor-Basis-Stromverhältnis ) - VCE = 10 V, - IC = 0.1 mA MMBT2709 MMBT2709A hFE hFE 35 75 – – – – - VCE = 10 V, - IC = 1 mA MMBT2709 MMBT2709A hFE hFE 50 100 – – – – - VCE = 10 V, - IC = 10 mA MMBT2709 MMBT2709A hFE hFE 75 100 – – – – - VCE = 10 V, - IC = 500 mA MMBT2709 MMBT2709A hFE hFE 30 50 – – – – hFE 100 – 300 fT 200 MHz – – – – 8 pF CEB0 – – 30 pF F – 4 dB – - VCE = 10 V, - IC = 150 mA Gain-Bandwidth Product – Transitfrequenz - VCE = 20 V, - IC = 50 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 Emitter-Base Capacitance – Emitter-Basis-Kapazität - VEB = 2 V, IC = ic = 0, f = 1 MHz Noise figure – Rauschzahl - VCE = 10 V, - IC = 100 µA, RS = 1 kΩ, f = 10 Hz...15.7 kHz Switching times – Schaltzeiten turn-on time delay time rise time - VCC = 30 V, - VBE = 1.5 V - IC = 150 mA, - IB1 = 15 mA ton td tr – – – – – – 45 ns 10 ns 40 ns turn-off time storage time fall time - VCC = 30 V, - IC = 150 mA - IB1 = - IB2 =15 mA toff ts tf – – – – – – 100 ns 80 ns 30 ns Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren Marking - Stempelung 1 2 RthA 420 K/W 2) MMBT2222, MMBT2222A MMBT2907A = 2F MMBT2907 = (M)2B ) Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 25