MMBT2222, MMBT2222A NPN Switching Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Version 2004-05-04 Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1 2.5 max 3 Type Code SOT-23 (TO-236) Weight approx. – Gewicht ca. 2 1 250 mW 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert 1.9 Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Dimensions / Maße in mm 1=B 2=E 3=C Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) MMBT2222 MMBT2222A Collector-Emitter-voltage B open VCE0 30 V 40 V Collector-Base-voltage E open VCB0 60 V 75 V Emitter-Base-voltage C open VEB0 5V 6V 1 Power dissipation – Verlustleistung Ptot 250 mW ) Collector current – Kollektorstrom (dc) IC 600 mA Junction temp. – Sperrschichttemperatur Tj 150°C Storage temperature – Lagerungstemperatur TS - 65…+ 150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 50 V IE = 0, VCB = 60 V MMBT2222 MMBT2222A ICB0 ICB0 – – – – 10 nA 10 nA IE = 0, VCB = 50 V, Tj = 150°C IE = 0, VCB = 60 V, Tj = 150°C MMBT2222 MMBT2222A ICB0 ICB0 – – – – 10 µA 10 µA IEB0 – – 100 nA Emitter-Base cutoff current – Emitterreststrom IC = 0, VEB = 3 V MMBT2222A Collector saturation voltage – Kollektor-Sättigungsspannung 1) 1 IC = 150 mA, IB = 15 mA MMBT2222 MMBT2222A VCEsat VCEsat – – – – 400 mV 300 mV IC = 500 mA, IB = 50 mA MMBT2222 MMBT2222A VCEsat VCEsat – – – – 1.6 V 1V ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 20 Switching Transistors MMBT2222, MMBT2222A Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. 1 Base saturation voltage – Basis-Sättigungsspannung ) IC = 150 mA, IB = 15 mA MMBT2222 MMBT2222A VBEsat VBEsat – 600 mV – – 1.3 V 1.2 V IC = 500 mA, IB = 50 mA MMBT2222 MMBT2222A VBEsat VBEsat – – – – 2.6 V 2V 35 50 75 100 50 40 – – – – – – – – – 300 – – DC current gain – Kollektor-Basis-Stromverhältnis 1) hFE hFE hFE hFE hFE hFE VCE = 10 V, IC = 0.1 mA VCE = 10 V, IC = 1 mA VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 150 mA VCE = 1 V, IC = 150 mA VCE = 10 V, IC = 500 mA h-Parameters at VCE = 10V, f = 1 kHz, IC = 1 mA / 10 mA 2) Small signal current gain Kleinsignal-Stromverstärkung MMBT2222 MMBT2222A hfe hfe 50 75 – – 300 375 Input impedance Eingangs-Impedanz MMBT2222 MMBT2222A hie hie 2 kΩ 0.25 kΩ – – 8 kΩ 1.25 kΩ Output admittance Ausgangs-Leitwert MMBT2222 MMBT2222A hoe hoe 5 µS 25 µS – – 35 µS 200 µS fT 250 MHz – – CCB0 – 4 pF 8 pF CEB0 – 20 pF 25 pF F – – 4 dB – – – – – – – – 10 ns 25 ns 225 ns 60 ns Gain-Bandwidth Product – Transitfrequenz VCE = 10 V, IC = 10 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure – Rauschzahl VCE = 10 V, IC = 100 µA, RS = 1 kΩ, f = 1 kHz MMBT2222A Switching times – Schaltzeiten delay time rise time storage time fall time VCC = 30 V, - VBE = 0.5 V IC = 150 mA, IB1 = 15 mA VCC = 30 V, IC = 150 mA IB1 = - IB2 = 15 mA Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren Marking - Stempelung td tr ts tf 420 K/W 3) RthA MMBT2907, MMBT2907A MMBT2222 = (M)1B MMBT2222A = 1P ) Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% ) MMBT2222: IC = 1 mA, MMBT2222A: IC = 10 mA 3 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 1 2 21