Si4542DY Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 6.9 0.035 at VGS = 4.5 V 5.8 0.032 at VGS = - 10 V - 6.1 0.045 at VGS = - 4.5 V - 5.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC D1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G2 G1 Top View Ordering Information: Si4542DY-T1-E3 (Lead (Pb)-free) Si4542DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 D2 N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 30 - 30 Gate-Source Voltage VGS ± 20 ± 20 6.9 - 6.1 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range ID 5.5 - 4.9 IDM 40 - 40 IS 1.7 PD Unit V A - 1.7 2.0 1.3 W TJ, Tstg - 55 to 150 Symbol N- or P-Channel Unit RthJA 62.5 °C/W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. Document Number: 70666 S09-0868-Rev. G, 18-May-09 www.vishay.com 1 Si4542DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage Gate-Body Leakage VGS(th) VDS = VGS, ID = 250 µA N-Ch 1.0 VDS = VGS, ID = - 250 µA P-Ch - 1.0 VDS = 0 V, VGS = ± 20 V IGSS VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea IDSS V N-Ch ± 100 P-Ch ± 100 N-Ch 1 VDS = - 30 V, VGS = 0 V P-Ch -1 VDS = 30 V, VGS = 0 V, TJ = 55 °C N-Ch 25 VDS = - 30 V, VGS = 0 V, TJ = 55 °C P-Ch - 25 VDS ≥ 5 V, VGS = 10 V N-Ch 20 VDS ≤ - 5 V, VGS = - 10 V P-Ch - 20 VGS = 10 V, ID = 6.9 A N-Ch ID(on) RDS(on) gfs VSD nA µA A 0.020 0.025 VGS = - 10 V, ID = - 6.1 A P-Ch 0.026 0.032 VGS = 4.5 V, ID = 5.8 A N-Ch 0.026 0.035 VGS = - 4.5 V, ID = - 5.1 A P-Ch 0.036 0.045 VDS = 15 V, ID = 6.9 A N-Ch 25 VDS = - 15 V, ID = - 6.1 A P-Ch 16 IS = 1.7 A, VGS = 0 V N-Ch 1.2 IS = - 1.7 A, VGS = 0 V P-Ch - 1.2 Ω S V Dynamicb Total Gate Charge Gate-Source Charge Qg Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Reverse Recovery Time N-Channel VDS = 15 V, VGS = 10 V, ID = 6.9 A P-Channel VDS = - 15 V, VGS = - 10 V, ID = - 6.1 A td(on) N-Channel VDD = 15 V, RL = 10 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω tr td(off) tf Qrr 30 50 P-Ch 32 50 N-Ch 7.5 P-Ch 7.0 N-Ch 3.5 P-Ch 5.0 nC N-Ch 0.5 2 3.4 P-Ch 2 4 6.8 N-Ch 12 20 P-Ch 10 20 N-Ch 10 20 P-Ch 10 20 N-Ch 60 90 P-Ch 55 80 N-Ch 15 30 P-Ch 25 40 IF = 1.7 A, dI/dt = 100 A/µs N-Ch 50 90 IF = - 1.7 A, dI/dt = 100 A/µs P-Ch 50 90 IF = 1.7 A, dI/dt = 100 A/µs N-Ch 45 IF = - 1.7 A, dI/dt = 100 A/µs P-Ch 55 P-Channel VDD = - 15 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω trr N-Ch Ω ns nC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70666 S09-0868-Rev. G, 18-May-09 Si4542DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted 40 40 VGS = 10 V thru 5 V 32 30 I D - Drain Current (A) I D - Drain Current (A) 4V 24 16 20 TC = 125 °C 10 8 25 °C 3V 0 0.0 - 55 °C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 4.0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3000 0.05 Ciss C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 2500 0.04 VGS = 4.5 V 0.03 0.02 VGS = 10 V 0.01 2000 1500 Coss 1000 500 Crss 0 0.00 0 10 20 30 0 40 5 10 20 25 30 VDS - Drain-to-Source Voltage (V) I D - Drain Current (A) On-Resistance vs. Drain Current Capacitance 1.6 10 VGS = 10 V ID = 6.9 A VDS = 15 V ID = 6.9 A 1.4 8 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 15 6 4 1.2 1.0 0.8 2 0 0 6 12 18 Qg - Total Gate Charge (nC) Gate Charge Document Number: 70666 S09-0868-Rev. G, 18-May-09 24 30 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si4542DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted 0.10 40 30 RDS(on) - On-Resistance(Ω) I S - Source Current (A) 20 10 TJ = 150 °C TJ = 25 °C 0.06 0.04 ID = 6.9 A 0.02 0.00 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 30 0.4 0.2 25 ID = 250 µA 0.0 20 - 0.2 Power (W) VGS(th) Variance (V) 0.08 - 0.4 15 TC = 25 °C Single Pulse 10 - 0.6 5 - 0.8 0 0.01 - 1.0 - 50 - 25 0 25 50 75 100 125 150 0.10 1.00 10.00 Time (s) TJ - Temperature (°C) Single Pulse Power Threshold Voltage 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 62.5 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10- 4 10- 3 4. Surface Mounted 10- 2 10- 1 1 10 30 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 70666 S09-0868-Rev. G, 18-May-09 Si4542DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted 40 40 TC = - 55 °C VGS = 10 V thru 5 V 32 I D - Drain Current (A) ID - Drain Current (A) 32 4V 24 16 8 2, 1 V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 125 °C 24 16 8 3V 0 0.0 25 °C 0 0 4.0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Transfer Characteristics Output Characteristics 3200 0.10 2400 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Ciss 0.08 0.06 VGS = 4.5 V 0.04 VGS = 10 V 1600 Coss 800 0.02 Crss 0 0.00 0 8 16 24 32 0 40 6 12 24 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 10 1.75 VDS = 15 V ID = 6.1 A 8 1.50 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 18 6 4 2 VGS = 10 V ID = 6.1 A 1.25 1.00 0.75 0 0 7 14 21 Qg - Total Gate Charge (nC) Gate Charge Document Number: 70666 S09-0868-Rev. G, 18-May-09 28 35 0.50 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 5 Si4542DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted 40 RDS(on) - On-Resistance (Ω) 0.20 I S - Source Current (A) TJ = 150 °C 10 TJ = 25 °C 1 0.16 0.12 ID = 6.1 A 0.08 0.04 0.00 0 0.3 0.6 0.9 1.2 1.5 0 VSD - Source-to-Drain Voltage (V) 10 On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage VGS(th) Variance (V) 2 4 6 8 VGS - Gate-to-Source Voltage (V) 0.8 30 0.6 25 ID = 250 µA 0.4 Power (W) 20 0.2 15 0.0 10 - 0.2 5 - 0.4 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.10 1.00 Time (s) TJ - Temperature (°C) 10.00 Single Pulse Power Threshold Voltage 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 62.5 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10- 4 10- 3 4. Surface Mounted 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 30 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70666. www.vishay.com 6 Document Number: 70666 S09-0868-Rev. G, 18-May-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000