Si4423DY Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0075 at VGS = - 4.5 V - 14 0.009 at VGS = - 2.5 V - 13 0.0115 at VGS = - 1.8 V - 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Game Station - Load Switch SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D S G Top View Ordering Information: Si4423DY-T1-E3 (Lead (Pb)-free) Si4423DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 10 s Steady State - 20 ±8 - 14 - 10 - 11.5 -8 IDM Pulsed Drain Current Continuous Source Current (Diode Conduction)a IS TA = 25 °C Maximum Power Dissipationa TA = 70 °C PD - 50 - 2.7 V A - 1.36 3.0 1.5 1.9 0.95 TJ, Tstg Operating Junction and Storage Temperature Range Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Symbol a Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Steady State RthJA RthJF Typical 33 Maximum 42 Unit 70 16 84 21 °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 72085 S09-0705-Rev. D, 27-Apr-09 www.vishay.com 1 Si4423DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VGS(th) VDS = VGS, ID = - 600 µA - 0.4 Typ. Max. Unit - 0.9 V nA Static Gate Threshold Voltage IGSS Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea VDS = 0 V, VGS = ± 8 V ± 100 VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 70 °C - 10 VDS = - 5 V, VGS = - 4.5 V RDS(on) µA - 30 A VGS = - 4.5 V, ID = - 14 A 0.006 VGS = - 2.5 V, ID = - 13 A 0.0071 0.009 VGS = - 1.8 V, ID = - 12 A 0.009 0.0115 0.0075 Forward Transconductancea gfs VDS = - 10 V, ID = - 14 A 60 Diode Forward Voltagea VSD IS = - 2.7 A, VGS = 0 V - 0.6 - 1.1 116 175 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 27 Gate Resistance Rg 3.2 VDS = - 10 V, VGS = - 5 V, ID = - 14 A td(on) Turn-On Delay Time VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 16 IF = - 2.1 A, dI/dt = 100 A/µs Ω 75 115 165 250 460 700 210 320 105 160 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 50 VGS = 5 thru 2 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 1.5 V 30 20 10 30 20 TC = 125 °C 10 25 °C - 55 °C 0 0 www.vishay.com 2 1 2 3 4 5 0 0.00 0.25 0.50 0.75 1.00 1.25 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1.50 1.75 Document Number: 72085 S09-0705-Rev. D, 27-Apr-09 Si4423DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 12000 Ciss 10000 0.012 C - Capacitance (pF) RDS(on) - On-Resistance (Ω ) 0.015 VGS = 1.8 V 0.009 VGS = 2.5 V 0.006 VGS = 4.5 V 8000 6000 4000 Coss 0.003 2000 Crss 0.000 0 0 8 16 24 32 40 0 4 8 ID - Drain Current (A) 20 Capacitance 5 1.6 VDS = 10 V ID = 13 A VGS = 4.5 V ID = 13 A 4 R DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 16 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 3 2 1 1.4 1.2 1.0 0.8 0 0 25 50 75 100 0.6 - 50 125 Qg - Total Gate Charge (nC) 0 25 50 75 100 125 150 On-Resistance vs. Junction Temperature 0.030 R DS(on) - On-Resistance ( Ω) 100 TJ = 150 °C 10 1 0.1 0.0 - 25 TJ - Junction Temperature (°C) Gate Charge I S - Source Current (A) 12 TJ = 25 °C 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 72085 S09-0705-Rev. D, 27-Apr-09 1.2 0.024 ID = 13 A 0.018 0.012 0.006 0.000 0.0 1.6 3.2 4.8 6.4 8.0 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si4423DY Vishay Siliconix 0.6 100 0.4 80 ID = 250 µA 60 Power (W) V GS(th) Variance (V) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.2 0.0 40 - 0.2 20 - 0.4 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by R DS(on) * 1 ms I D - Drain Current (A) 10 10 ms 1 100 ms 1s 0.1 0.1 0.1 10 s DC TC = 25 °C Single Pulse 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 70 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72085 S09-0705-Rev. D, 27-Apr-09 Si4423DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72085. Document Number: 72085 S09-0705-Rev. D, 27-Apr-09 www.vishay.com 5 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000