Si4423DY Datasheet

Si4423DY
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) (Ω)
ID (A)
0.0075 at VGS = - 4.5 V
- 14
0.009 at VGS = - 2.5 V
- 13
0.0115 at VGS = - 1.8 V
- 12
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Game Station
- Load Switch
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
S
G
Top View
Ordering Information: Si4423DY-T1-E3 (Lead (Pb)-free)
Si4423DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
10 s
Steady State
- 20
±8
- 14
- 10
- 11.5
-8
IDM
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
IS
TA = 25 °C
Maximum Power Dissipationa
TA = 70 °C
PD
- 50
- 2.7
V
A
- 1.36
3.0
1.5
1.9
0.95
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
- 55 to 150
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Symbol
a
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Steady State
RthJA
RthJF
Typical
33
Maximum
42
Unit
70
16
84
21
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72085
S09-0705-Rev. D, 27-Apr-09
www.vishay.com
1
Si4423DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VGS(th)
VDS = VGS, ID = - 600 µA
- 0.4
Typ.
Max.
Unit
- 0.9
V
nA
Static
Gate Threshold Voltage
IGSS
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
VDS = 0 V, VGS = ± 8 V
± 100
VDS = - 20 V, VGS = 0 V
-1
VDS = - 20 V, VGS = 0 V, TJ = 70 °C
- 10
VDS = - 5 V, VGS = - 4.5 V
RDS(on)
µA
- 30
A
VGS = - 4.5 V, ID = - 14 A
0.006
VGS = - 2.5 V, ID = - 13 A
0.0071
0.009
VGS = - 1.8 V, ID = - 12 A
0.009
0.0115
0.0075
Forward Transconductancea
gfs
VDS = - 10 V, ID = - 14 A
60
Diode Forward Voltagea
VSD
IS = - 2.7 A, VGS = 0 V
- 0.6
- 1.1
116
175
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
27
Gate Resistance
Rg
3.2
VDS = - 10 V, VGS = - 5 V, ID = - 14 A
td(on)
Turn-On Delay Time
VDD = - 10 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery
Time
trr
nC
16
IF = - 2.1 A, dI/dt = 100 A/µs
Ω
75
115
165
250
460
700
210
320
105
160
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
50
VGS = 5 thru 2 V
40
I D - Drain Current (A)
I D - Drain Current (A)
40
1.5 V
30
20
10
30
20
TC = 125 °C
10
25 °C
- 55 °C
0
0
www.vishay.com
2
1
2
3
4
5
0
0.00
0.25
0.50
0.75
1.00
1.25
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1.50
1.75
Document Number: 72085
S09-0705-Rev. D, 27-Apr-09
Si4423DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
12000
Ciss
10000
0.012
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω )
0.015
VGS = 1.8 V
0.009
VGS = 2.5 V
0.006
VGS = 4.5 V
8000
6000
4000
Coss
0.003
2000
Crss
0.000
0
0
8
16
24
32
40
0
4
8
ID - Drain Current (A)
20
Capacitance
5
1.6
VDS = 10 V
ID = 13 A
VGS = 4.5 V
ID = 13 A
4
R DS(on) - On-Resistance
(Normalized)
V GS - Gate-to-Source Voltage (V)
16
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
3
2
1
1.4
1.2
1.0
0.8
0
0
25
50
75
100
0.6
- 50
125
Qg - Total Gate Charge (nC)
0
25
50
75
100
125
150
On-Resistance vs. Junction Temperature
0.030
R DS(on) - On-Resistance ( Ω)
100
TJ = 150 °C
10
1
0.1
0.0
- 25
TJ - Junction Temperature (°C)
Gate Charge
I S - Source Current (A)
12
TJ = 25 °C
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 72085
S09-0705-Rev. D, 27-Apr-09
1.2
0.024
ID = 13 A
0.018
0.012
0.006
0.000
0.0
1.6
3.2
4.8
6.4
8.0
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
www.vishay.com
3
Si4423DY
Vishay Siliconix
0.6
100
0.4
80
ID = 250 µA
60
Power (W)
V GS(th) Variance (V)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.2
0.0
40
- 0.2
20
- 0.4
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R DS(on) *
1 ms
I D - Drain Current (A)
10
10 ms
1
100 ms
1s
0.1
0.1
0.1
10 s
DC
TC = 25 °C
Single Pulse
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 70 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
4
Document Number: 72085
S09-0705-Rev. D, 27-Apr-09
Si4423DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72085.
Document Number: 72085
S09-0705-Rev. D, 27-Apr-09
www.vishay.com
5
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
www.vishay.com
22
Document Number: 72606
Revision: 21-Jan-08
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000