SiA429DJT Datasheet

New Product
SiA429DJT
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) ()
ID (A)
0.0205 at VGS = - 4.5 V
- 12a
0.027 at VGS = - 2.5 V
- 12a
0.036 at VGS = - 1.8 V
- 12a
0.060 at VGS = - 1.5 V
-4
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Ultra-Thin 0.6 mm height
- Low On-Resistance
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
24.5 nC
APPLICATIONS
• Load Switch and Charger Switch for Portable Devices
• DC/DC Converter
Thin PowerPAK SC-70-6L-Single
S
1
D
6
G
D
D
5
2.05 mm
Marking Code
2
G
D
BPX
3
Part # code
0.6 mm
XXX
S
4
S
Lot traceability
and Date code
2.05 mm
D
Ordering Information: SiA429DJT-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
Unit
V
12a
ID
IDM
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Limit
- 20
±8
IS
PD
TJ, Tstg
- 12a
- 10.6b, c
- 8.5b, c
- 30
- 12a
- 2.9b, c
19
12
3.5b, c
2.2b, c
- 55 to 150
260
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
RthJA
t5s
28
36
Maximum Junction-to-Ambientb, f
°C/W
RthJC
5.3
6.5
Maximum Junction-to-Case (Drain)
Steady State
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
Document Number: 67038
S11-0649-Rev. B, 11-Apr-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA429DJT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
V
- 12
ID = - 250 µA
mV/°C
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
-1
V
IGSS
VDS = 0 V, VGS = ± 8 V
± 100
nA
VDS = - 20 V, VGS = 0 V
-1
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
- 10
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
a
Forward Transconductance
VDS - 5 V, VGS = - 4.5 V
RDS(on)
gfs
2.7
- 0.4
- 20
µA
A
VGS = - 4.5 V, ID = - 6 A
0.0170
0.0205
VGS = - 2.5 V, ID = - 2 A
0.022
0.027
VGS = - 1.8 V, ID = - 2 A
0.029
0.036
VGS = - 1.5 V, ID = - 1 A
0.038
0.060
VDS = - 10 V, ID = - 6 A
30

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
1750
VDS = - 10 V, VGS = 0 V, f = 1 MHz
pF
270
240
VDS = - 10 V, VGS = - 8 V, ID = - 10 A
VDS = - 10 V, VGS = - 4.5 V, ID = - 10 A
41
62
24.5
37
2.4
nC
6.7
f = 1 MHz
td(on)
tr
VDD = - 10 V, RL = 1.2 
ID  - 8.5 A, VGEN = - 4.5 V, Rg = 1 
td(off)
1.3
6.3
13
22
35
25
40
70
105
tf
25
40
td(on)
10
15
tr
VDD = - 10 V, RL = 1.2 
ID  - 8.5 A, VGEN = - 8 V, Rg = 1 
td(off)
tf
10
15
80
120
25
40

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
TC = 25 °C
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
- 12
- 30
IS = - 8.5 A, VGS = 0 V
IF = - 8.5 A, dI/dt = 100 A/µs, TJ = 25 °C
A
- 0.8
- 1.2
V
35
60
ns
18
30
nC
13
22
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 67038
S11-0649-Rev. B, 11-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA429DJT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
30
V GS = 5 V thru 2 V
16
ID - Drain Current (A)
ID - Drain Current (A)
25
20
15
V GS = 1.5 V
10
12
8
T C = 25 °C
4
5
T C = 125 °C
T C = - 55 °C
V GS = 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
0
0.0
3.0
0.4
0.8
1.2
1.6
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2.0
3500
0.08
V GS = 1.5 V
3000
V GS = 1.8 V
0.06
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.07
0.05
0.04
0.03
V GS = 2.5 V
0.02
2000
Ciss
1500
1000
Coss
V GS = 4.5 V
0.01
2500
500
Crss
0
0
0
5
10
15
20
25
0
30
5
ID - Drain Current (A)
15
20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.65
8
ID = 10 A
V DS = 5 V
1.45
V DS = 10 V
V DS = 16 V
4
2
V GS = 4.5 V; 2.5 V; I D = 6 A
(Normalized)
6
RDS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
10
1.25
V GS = 1.8 V; I D = 6 A
1.05
V GS = 1.5 V; I D = 1 A
0.85
0
0
10
20
30
40
50
0.65
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 67038
S11-0649-Rev. B, 11-Apr-11
150
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA429DJT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.06
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
100
T J = 150 °C
10
T J = 25 °C
1
0.05
ID = 1 A; T J = 125 °C
0.04
ID = 6 A; T J = 125 °C
0.03
ID = 6 A; T J = 25 °C
0.02
0.01
0.1
0.0
0.2
0.4
0.6
0.8
1.0
0
1.2
2
3
4
5
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
0.7
25
0.6
20
ID = 250 μA
Power (W)
VGS(th) (V)
1
Soure-Drain Diode Forward Voltage
0.8
0.5
15
0.4
10
0.3
5
0.2
- 50
ID = 1 A; T J = 25 °C
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
100
1000
Time (s)
TJ - Temperature (°C)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited by RDS(on) *
ID - Drain Current (A)
10
100 μs
1 ms
1
10 ms
100 ms
1 s, 10 s
0.1
DC
TA = 25 °C
Single Pulse
0.01
0.1
BVDSS Limited
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 67038
S11-0649-Rev. B, 11-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA429DJT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
30
20
Power Dissipation (W)
ID - Drain Current (A)
25
20
15
Package Limited
10
15
10
5
5
0
0
0
25
50
75
100
125
150
25
50
75
100
125
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67038
S11-0649-Rev. B, 11-Apr-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA429DJT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 80 C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
10-4
0.02
Single Pulse
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67038.
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Document Number: 67038
S11-0649-Rev. B, 11-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
Case Outline for PowerPAK® SC70T
D
A
b
e
PIN3
PIN1
T
L
PIN3
K
E2
E2
D3
D2
b
PIN2
D2
D2
K
K E4 E3 K4 L
PIN2
E
PIN1
E2
e
Terminal #1
Topside View
PIN6
PIN6
PIN4
PIN5
K1
K2
C
PIN4
K2
K1
Backside View of Single
A
PIN5
K2
A1
K3
Backside View of Dual
Z
Detail Z
Z
Side View
SINGLE PAD
DIM.
MIN.
0.525
0
0.23
0.15
1.98
0.85
0.135
1.98
1.40
0.345
0.425
MILLIMETERS
NOM.
MAX.
0.60
0.65
0.05
0.30
0.38
0.20
0.25
2.05
2.15
0.95
1.05
0.235
0.335
2.05
2.15
1.50
1.60
0.395
0.445
0.475
0.525
0.65 BSC
0.275 TYP.
0.400 TYP.
0.240 TYP.
0.225 TYP.
0.355 TYP.
0.275
0.375
A
A1
b
C
D
D2
D3
E
E2
E3
E4
e
K
K1
K2
K3
K4
L
0.175
T
ECN: C12-0160-Rev. B, 05-Mar-12
DWG: 5994
INCHES
MIN.
NOM.
0.0206
0.024
0
0.009
0.012
0.006
0.008
0.078
0.081
0.033
0.037
0.005
0.009
0.078
0.081
0.055
0.059
0.014
0.016
0.017
0.019
0.026 BSC
0.011 TYP.
0.016 TYP.
0.009 TYP.
0.009 TYP.
0.014 TYP.
0.007
0.011
DUAL PAD
MAX.
0.026
0.002
0.015
0.010
0.085
0.041
0.013
0.085
0.063
0.018
0.021
MIN.
0.525
0
0.23
0.15
1.98
0.513
1.98
0.85
MILLIMETERS
NOM.
MAX.
0.60
0.65
0.05
0.30
0.38
0.20
0.25
2.05
2.15
0.613
0.713
2.05
0.95
2.15
1.05
MIN.
0.0206
0
0.009
0.006
0.078
0.020
INCHES
NOM.
0.024
0.012
0.008
0.081
0.024
MAX.
0.026
0.002
0.015
0.010
0.085
0.028
0.078
0.033
0.081
0.037
0.085
0.041
0.65 BSC
0.275 TYP.
0.320 TYP.
0.252 TYP.
0.015
0.175
0.05
0.275
0.10
0.026 BSC
0.011 TYP.
0.013 TYP.
0.010 TYP.
0.375
0.15
0.007
0.002
0.011
0.004
0.015
0.006
Notes
1. All dimensions are in millimeter. Millimeters will govern.
2. Package outline exculsive of mold flash and metal burr.
3. Package outline inclusive of plating
Revision: 05-Mar-12
1
Document Number: 65370
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000