VISHAY SIA907EDJT-T1-GE3

SiA907EDJT
Vishay Siliconix
Dual P-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) ()
ID (A)
0.057 at VGS = - 4.5 V
- 4.5a
0.095 at VGS = - 2.5 V
- 4.5a
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• New Thermally Enhanced Thin PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
• Typical ESD Protection: 1500 V HBM
• High Speed Switching
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
4.9 nC
Thin PowerPAK SC-70-6L-Dual
APPLICATIONS
• Charger Switch, Load Switch for Portable Devices
S1
S2
• Battery Management
1
S1
2
D1
6
G1
D1
3
Marking Code
D2
5
G2
0.6 mm
D2
2.05 mm
4
Part # code
S2
G1
G2
DMX
2.05 mm
XXX
Lot Traceability
and Date code
D1
P-Channel MOSFET
Ordering Information: SiA907EDJT-T1-GE3 (Lead (Pb)-free and Halogen-free)
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
V
- 4.5a
- 1.6b, c
7.8
5
IS
PD
Unit
- 4.5a
- 4.5a
- 4.5a, b, c
- 3.8b, c
- 15
IDM
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Limit
- 20
± 12
1.9b, c
1.2b, c
- 55 to 150
260
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
b, f
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
t5s
Steady State
Symbol
RthJA
RthJC
Typical
52
12.5
Maximum
65
16
Unit
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The Thin PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 110 °C/W.
Document Number: 67874
S11-0862-Rev. A, 02-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA907EDJT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain
Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
ID = - 250 µA
VDS = VGS, ID = - 250 µA
IGSS
IDSS
RDS(on)
gfs
mV/°C
2.5
- 0.5
- 1.4
VDS = 0 V, VGS = ± 4.5 V
± 0.5
VDS = 0 V, VGS = ± 12 V
± 10
VDS = - 20 V, VGS = 0 V
-1
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
- 10
VDS - 5 V, VGS = - 4.5 V
ID(on)
V
- 14
- 15
V
µA
A
VGS = - 4.5 V, ID = - 3.6 A
0.047
0.057
VGS = - 2.5 V, ID = - 1.5 A
0.075
0.095
VDS = - 10 V, ID = - 3.6 A
11

S
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDS = - 10 V, VGS = - 10 V, ID = - 4.7 A
VDS = - 10 V, VGS = - 4.5 V, ID = - 4.7 A
15
23
7.1
11
1.3
nC
2.1
f = 1 MHz
td(on)
tr
VDD = - 10 V, RL = 2.7 
ID  - 3.7 A, VGEN = - 4.5 V, Rg = 1 
td(off)
1.4
7
14
13
25
15
30
30
60
tf
10
15
td(on)
5
10
10
20
30
60
10
20
tr
VDD = - 10 V, RL = 2.7 
ID  - 3.7 A, VGEN = - 10 V, Rg = 1 
td(off)
tf

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
TC = 25 °C
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
- 4.5
- 15
IS = - 3.7 A, VGS = 0 V
A
- 0.9
- 1.2
Body Diode Reverse Recovery Time
trr
15
30
ns
Body Diode Reverse Recovery Charge
Qrr
6
12
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = - 3.7 A, dI/dt = 100 A/µs, TJ = 25 °C
8.5
6.5
V
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 67874
S11-0862-Rev. A, 02-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA907EDJT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10-2
0.5
10-3
0.4
TJ = 150 °C
IG - Gate Current (A)
IG - Gate Current (mA)
10-4
0.3
TJ = 25 °C
0.2
10-5
10-6
TJ = 25 °C
10-7
10-8
0.1
10-9
10-10
0.0
0
3
6
9
12
15
18
0
3
VGS - Gate-to-Source Voltage (V)
6
9
12
15
18
VGS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-to-Source Voltage
Gate Current vs. Gate-to-Source Voltage
5
15
VGS = 10 V thru 3 V
VGS = 2.5 V
4
I D - Drain Current (A)
I D - Drain Current (A)
12
9
VGS = 2 V
6
3
2
TC = 25 °C
1
3
TC = 125 °C
VGS = 1.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
TC = - 55 °C
0
0.0
3.0
0.5
VDS - Drain-to-Source Voltage (V)
1.5
2.0
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.20
1000
800
0.15
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
1.0
VGS = 2.5 V
0.10
VGS = 4.5 V
0.05
Ciss
600
400
200
Coss
Crss
0
0.00
0
3
6
9
12
15
0
5
10
15
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
Document Number: 67874
S11-0862-Rev. A, 02-May-11
20
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA907EDJT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.5
ID = 4.7 A
6
VDS = 10 V
VDS = 16 V
4
VGS = 4.5 V
1.3
(Normalized)
8
ID = 3.6 A
1.4
VDS = 5 V
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
10
1.2
VGS = 2.5 V
1.1
1.0
0.9
2
0.8
0
0
3
6
9
12
15
0.7
- 50
18
- 25
0
Qg - Total Gate Charge (nC)
Gate Charge
75
100
125
150
0.20
10
R DS(on) - On-Resistance (Ω)
IS - Source Current (A)
50
On-Resistance vs. Junction Temperature
100
TJ = 150 °C
1
0.1
0.0
25
TJ - Junction Temperature (°C)
TJ = 25 °C
0.15
ID = 3.6 A; TJ = 125 °C
ID = 3.6 A; TJ = 25 °C
0.10
ID = 1 A; TJ = 125 °C
ID = 1 A; TJ = 25 °C
0.05
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
20
0.9
0.8
15
Power (W)
VGS(th) (V)
0.7
0.6
10
ID = 250 μA
0.5
5
0.4
0.3
- 50
- 25
0
25
50
75
TJ - Temperature (°C)
Threshold Voltage
www.vishay.com
4
100
125
150
0
0.001
0.01
0.1
1
10
100
1000
Pulse (s)
Single Pulse Power, Junction-to-Ambient
Document Number: 67874
S11-0862-Rev. A, 02-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA907EDJT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
Limited by RDS(on)*
ID - Drain Current (A)
10
100 μs
1
1 ms
10 ms
0.1
100 ms
1s
10 s
DC
TA = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
12
8
Power Dissipation (W)
ID - Drain Current (A)
10
8
6
Package Limited
4
6
4
2
2
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67874
S11-0862-Rev. A, 02-May-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA907EDJT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 110 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67874.
www.vishay.com
6
Document Number: 67874
S11-0862-Rev. A, 02-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
CASE OUTLINE for PowerPAK® SC70T
D
A
Terminal #1
b
e
b
Pin 1
T
Pin 1
D3
D2
D2
E2
E2
E2
K
E3 K4
E4
Pin 2
D2
C
A1
K
K
Topside View
e
Pin 3
L
Pin 2
L
E
Pin 3
A
Pin 4
Pin 5 Pin 6
K3
K2
K1
Z
MILLIMETERS
NOM.
MAX.
0.60
0.65
0.05
0.30
0.38
0.20
0.25
2.05
2.15
0.95
1.05
0.235
0.335
2.05
2.15
1.50
1.60
0.395
0.445
0.475
0.525
0.65 BSC
0.275 TYP.
0.400 TYP.
0.240 TYP.
0.225 TYP.
0.355 TYP.
0.175
0.275
0.375
MIN.
0.525
0.00
0.23
0.15
1.98
0.85
0.135
1.98
1.40
0.345
0.425
A
A1
b
C
D
D2
D3
E
E2
E3
E4
e
K
K1
K2
K3
K4
L
T
ECN: C09-0671-Rev. A, 07-Sep-09
DWG: 5994
MIN.
0.0206
0.00
0.009
0.006
0.078
0.033
0.005
0.078
0.055
0.014
0.017
0.007
Backside View of Dual
Backside View of Single
SINGLE PAD
DIM.
K2
K1
Detail Z
Z
Side View
Pin 4 Pin 5 Pin 6
K2
DUAL PAD
INCHES
NOM.
0.024
0.012
0.008
0.081
0.037
0.009
0.081
0.059
0.016
0.019
0.026 BSC
0.011 TYP.
0.016 TYP.
0.009 TYP.
0.009 TYP.
0.014 TYP.
0.011
MAX.
0.026
0.002
0.015
0.010
0.085
0.041
0.013
0.085
0.063
0.018
0.021
MIN.
0.525
0.00
0.23
0.15
1.98
0.513
1.98
0.85
MILLIMETERS
NOM.
MAX.
0.60
0.65
0.05
0.30
0.38
0.20
0.25
2.05
2.15
0.613
0.713
2.05
0.95
2.15
1.05
MIN.
0.0206
0.00
0.009
0.006
0.078
0.020
INCHES
NOM.
0.024
0.012
0.008
0.081
0.024
MAX.
0.026
0.002
0.015
0.010
0.085
0.028
0.078
0.033
0.081
0.037
0.085
0.041
0.65 BSC
0.275 TYP.
0.320 TYP.
0.252 TYP.
0.015
0.175
0.05
0.275
0.10
0.026 BSC
0.011 TYP.
0.013 TYP.
0.010 TYP.
0.375
0.15
0.007
0.002
0.011
0.004
0.015
0.006
Notes
1. All dimensions are in millimeter. Millimeters will govern.
2. Package outline exculsive of mold flash and metal burr.
3. Package outline inclusive of plating
Document Number: 65370
07-Sep-09
www.vishay.com
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1