SiA907EDJT Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.057 at VGS = - 4.5 V - 4.5a 0.095 at VGS = - 2.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced Thin PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance • Typical ESD Protection: 1500 V HBM • High Speed Switching • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 4.9 nC Thin PowerPAK SC-70-6L-Dual APPLICATIONS • Charger Switch, Load Switch for Portable Devices S1 S2 • Battery Management 1 S1 2 D1 6 G1 D1 3 Marking Code D2 5 G2 0.6 mm D2 2.05 mm 4 Part # code S2 G1 G2 DMX 2.05 mm XXX Lot Traceability and Date code D1 P-Channel MOSFET Ordering Information: SiA907EDJT-T1-GE3 (Lead (Pb)-free and Halogen-free) D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Maximum Power Dissipation TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e V - 4.5a - 1.6b, c 7.8 5 IS PD Unit - 4.5a - 4.5a - 4.5a, b, c - 3.8b, c - 15 IDM Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Limit - 20 ± 12 1.9b, c 1.2b, c - 55 to 150 260 A W °C THERMAL RESISTANCE RATINGS Parameter b, f Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) t5s Steady State Symbol RthJA RthJC Typical 52 12.5 Maximum 65 16 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/ppg?73257). The Thin PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 110 °C/W. Document Number: 67874 S11-0862-Rev. A, 02-May-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA907EDJT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea ID = - 250 µA VDS = VGS, ID = - 250 µA IGSS IDSS RDS(on) gfs mV/°C 2.5 - 0.5 - 1.4 VDS = 0 V, VGS = ± 4.5 V ± 0.5 VDS = 0 V, VGS = ± 12 V ± 10 VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 VDS - 5 V, VGS = - 4.5 V ID(on) V - 14 - 15 V µA A VGS = - 4.5 V, ID = - 3.6 A 0.047 0.057 VGS = - 2.5 V, ID = - 1.5 A 0.075 0.095 VDS = - 10 V, ID = - 3.6 A 11 S Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDS = - 10 V, VGS = - 10 V, ID = - 4.7 A VDS = - 10 V, VGS = - 4.5 V, ID = - 4.7 A 15 23 7.1 11 1.3 nC 2.1 f = 1 MHz td(on) tr VDD = - 10 V, RL = 2.7 ID - 3.7 A, VGEN = - 4.5 V, Rg = 1 td(off) 1.4 7 14 13 25 15 30 30 60 tf 10 15 td(on) 5 10 10 20 30 60 10 20 tr VDD = - 10 V, RL = 2.7 ID - 3.7 A, VGEN = - 10 V, Rg = 1 td(off) tf ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Current ISM Body Diode Voltage VSD - 4.5 - 15 IS = - 3.7 A, VGS = 0 V A - 0.9 - 1.2 Body Diode Reverse Recovery Time trr 15 30 ns Body Diode Reverse Recovery Charge Qrr 6 12 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = - 3.7 A, dI/dt = 100 A/µs, TJ = 25 °C 8.5 6.5 V ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 67874 S11-0862-Rev. A, 02-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA907EDJT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10-2 0.5 10-3 0.4 TJ = 150 °C IG - Gate Current (A) IG - Gate Current (mA) 10-4 0.3 TJ = 25 °C 0.2 10-5 10-6 TJ = 25 °C 10-7 10-8 0.1 10-9 10-10 0.0 0 3 6 9 12 15 18 0 3 VGS - Gate-to-Source Voltage (V) 6 9 12 15 18 VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-to-Source Voltage Gate Current vs. Gate-to-Source Voltage 5 15 VGS = 10 V thru 3 V VGS = 2.5 V 4 I D - Drain Current (A) I D - Drain Current (A) 12 9 VGS = 2 V 6 3 2 TC = 25 °C 1 3 TC = 125 °C VGS = 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) 1.5 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.20 1000 800 0.15 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.0 VGS = 2.5 V 0.10 VGS = 4.5 V 0.05 Ciss 600 400 200 Coss Crss 0 0.00 0 3 6 9 12 15 0 5 10 15 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance Document Number: 67874 S11-0862-Rev. A, 02-May-11 20 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA907EDJT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.5 ID = 4.7 A 6 VDS = 10 V VDS = 16 V 4 VGS = 4.5 V 1.3 (Normalized) 8 ID = 3.6 A 1.4 VDS = 5 V R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 10 1.2 VGS = 2.5 V 1.1 1.0 0.9 2 0.8 0 0 3 6 9 12 15 0.7 - 50 18 - 25 0 Qg - Total Gate Charge (nC) Gate Charge 75 100 125 150 0.20 10 R DS(on) - On-Resistance (Ω) IS - Source Current (A) 50 On-Resistance vs. Junction Temperature 100 TJ = 150 °C 1 0.1 0.0 25 TJ - Junction Temperature (°C) TJ = 25 °C 0.15 ID = 3.6 A; TJ = 125 °C ID = 3.6 A; TJ = 25 °C 0.10 ID = 1 A; TJ = 125 °C ID = 1 A; TJ = 25 °C 0.05 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 20 0.9 0.8 15 Power (W) VGS(th) (V) 0.7 0.6 10 ID = 250 μA 0.5 5 0.4 0.3 - 50 - 25 0 25 50 75 TJ - Temperature (°C) Threshold Voltage www.vishay.com 4 100 125 150 0 0.001 0.01 0.1 1 10 100 1000 Pulse (s) Single Pulse Power, Junction-to-Ambient Document Number: 67874 S11-0862-Rev. A, 02-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA907EDJT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 Limited by RDS(on)* ID - Drain Current (A) 10 100 μs 1 1 ms 10 ms 0.1 100 ms 1s 10 s DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 12 8 Power Dissipation (W) ID - Drain Current (A) 10 8 6 Package Limited 4 6 4 2 2 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 67874 S11-0862-Rev. A, 02-May-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA907EDJT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 110 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67874. www.vishay.com 6 Document Number: 67874 S11-0862-Rev. A, 02-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix CASE OUTLINE for PowerPAK® SC70T D A Terminal #1 b e b Pin 1 T Pin 1 D3 D2 D2 E2 E2 E2 K E3 K4 E4 Pin 2 D2 C A1 K K Topside View e Pin 3 L Pin 2 L E Pin 3 A Pin 4 Pin 5 Pin 6 K3 K2 K1 Z MILLIMETERS NOM. MAX. 0.60 0.65 0.05 0.30 0.38 0.20 0.25 2.05 2.15 0.95 1.05 0.235 0.335 2.05 2.15 1.50 1.60 0.395 0.445 0.475 0.525 0.65 BSC 0.275 TYP. 0.400 TYP. 0.240 TYP. 0.225 TYP. 0.355 TYP. 0.175 0.275 0.375 MIN. 0.525 0.00 0.23 0.15 1.98 0.85 0.135 1.98 1.40 0.345 0.425 A A1 b C D D2 D3 E E2 E3 E4 e K K1 K2 K3 K4 L T ECN: C09-0671-Rev. A, 07-Sep-09 DWG: 5994 MIN. 0.0206 0.00 0.009 0.006 0.078 0.033 0.005 0.078 0.055 0.014 0.017 0.007 Backside View of Dual Backside View of Single SINGLE PAD DIM. K2 K1 Detail Z Z Side View Pin 4 Pin 5 Pin 6 K2 DUAL PAD INCHES NOM. 0.024 0.012 0.008 0.081 0.037 0.009 0.081 0.059 0.016 0.019 0.026 BSC 0.011 TYP. 0.016 TYP. 0.009 TYP. 0.009 TYP. 0.014 TYP. 0.011 MAX. 0.026 0.002 0.015 0.010 0.085 0.041 0.013 0.085 0.063 0.018 0.021 MIN. 0.525 0.00 0.23 0.15 1.98 0.513 1.98 0.85 MILLIMETERS NOM. MAX. 0.60 0.65 0.05 0.30 0.38 0.20 0.25 2.05 2.15 0.613 0.713 2.05 0.95 2.15 1.05 MIN. 0.0206 0.00 0.009 0.006 0.078 0.020 INCHES NOM. 0.024 0.012 0.008 0.081 0.024 MAX. 0.026 0.002 0.015 0.010 0.085 0.028 0.078 0.033 0.081 0.037 0.085 0.041 0.65 BSC 0.275 TYP. 0.320 TYP. 0.252 TYP. 0.015 0.175 0.05 0.275 0.10 0.026 BSC 0.011 TYP. 0.013 TYP. 0.010 TYP. 0.375 0.15 0.007 0.002 0.011 0.004 0.015 0.006 Notes 1. All dimensions are in millimeter. Millimeters will govern. 2. Package outline exculsive of mold flash and metal burr. 3. Package outline inclusive of plating Document Number: 65370 07-Sep-09 www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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