SiA907EDJT www.vishay.com Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) ID (A) 0.057 at VGS = -4.5 V -4.5 a 0.095 at VGS = -2.5 V -4.5 a Qg (TYP.) 4.9 nC PowerPAK® SC-70-6L Dual S2 4 D1 6 G2 5 • TrenchFET® power MOSFET • Thermally enhanced Thin PowerPAK® SC-70 package - Small footprint area - Low on-resistance • Typical ESD protection: 1500 V HBM • High speed switching • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 D1 APPLICATIONS D2 05 2. m m 1 2 3 G1 D2 Bottom View m 5m 2.0 Top View 1 S1 • Charger Switch, Load Switch for Portable Devices • Battery Management S1 S2 Marking Code: DM Ordering Information: SiA907EDJT-T1-GE3 (Lead (Pb)-free and Halogen-free) SiA907EDJT-T4-GE3 (Lead (Pb)-free and Halogen-free) G1 G2 P-Channel MOSFET P-Channel MOSFET D1 D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TA = 25 °C -4.5 a ID -4.5 a, b, c -3.8 b, c TA = 70 °C IDM Pulsed Drain Current (t = 300 μs) Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C Maximum Power Dissipation TA = 25 °C -4.5 a IS -1.6 b, c 7.8 5 PD W 1.9 b, c 1.2 b, c TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range A -15 TC = 25 °C TC = 70 °C V -4.5 a TC = 25 °C TC = 70 °C UNIT -55 to 150 Soldering Recommendations (Peak Temperature) d, e °C 260 THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SYMBOL b, f Maximum Junction-to-Case (Drain) TYPICAL MAXIMUM t≤5s RthJA 52 65 Steady State RthJC 12.5 16 UNIT °C/W Notes a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc?73257). The Thin PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 110 °C/W. S14-0624-Rev. B, 24-Mar-14 Document Number: 67874 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA907EDJT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = -250 μA -20 - - V Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) IGSS Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a - -14 - - 2.5 - VDS = VGS, ID = -250 μA -0.5 - -1.4 VDS = 0 V, VGS = ± 4.5 V - - ± 0.5 ID = -250 μA IDSS ID(on) RDS(on) gfs VDS = 0 V, VGS = ± 12 V - - ± 10 VDS = -20 V, VGS = 0 V - - -1 VDS = -20 V, VGS = 0 V, TJ = 55 °C - - -10 VDS ≤ -5 V, VGS = -4.5 V -15 - - VGS = -4.5 V, ID = -3.6 A - 0.047 0.057 VGS = -2.5 V, ID = -1.5 A - 0.075 0.095 VDS = -10 V, ID = -3.6 A - 11 - mV/°C V μA A Ω S Dynamic b Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDS = -10 V, VGS = -10 V, ID = -4.7 A VDS = -10 V, VGS = -4.5 V, ID = -4.7 A Rg f = 1 MHz td(on) VDD = -10 V, RL = 2.7 Ω ID ≅ -3.7 A, VGEN = -4.5 V, Rg = 1 Ω tr td(off) - 15 23 - 7.1 11 - 1.3 - - 2.1 - 1.4 7 14 - 13 25 - 15 30 - 30 60 tf - 10 15 td(on) - 5 10 - 10 20 - 30 60 - 10 20 VDD = -10 V, RL = 2.7 Ω ID ≅ -3.7 A, VGEN = -10 V, Rg = 1 Ω tr td(off) tf nC Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD TC = 25 °C IS = -3.7 A, VGS = 0 V - - -4.5 - - -15 - -0.9 -1.2 A V Body Diode Reverse Recovery Time trr - 15 30 ns Body Diode Reverse Recovery Charge Qrr - 6 12 nC Reverse Recovery Fall Time ta - 8.5 - Reverse Recovery Rise Time tb - 6.5 - IF = -3.7 A, dI/dt = 100 A/μs, TJ = 25 °C ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-0624-Rev. B, 24-Mar-14 Document Number: 67874 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA907EDJT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10-2 0.5 10-3 0.4 TJ = 150 °C IG - Gate Current (A) IG - Gate Current (mA) 10-4 0.3 TJ = 25 °C 0.2 10-5 10-6 TJ = 25 °C 10-7 10-8 0.1 10-9 0.0 10-10 0 3 6 9 12 15 18 0 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-to-Source Voltage Gate Current vs. Gate-to-Source Voltage 18 5 15 VGS = 10 V thru 3 V VGS = 2.5 V 4 I D - Drain Current (A) I D - Drain Current (A) 12 9 VGS = 2 V 6 3 2 TC = 25 °C 1 3 TC = 125 °C VGS = 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.5 1.0 1.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.20 2.0 1000 800 0.15 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) TC = - 55 °C 0 0.0 VGS = 2.5 V 0.10 VGS = 4.5 V 0.05 Ciss 600 400 200 Coss Crss 0 0.00 0 3 6 9 12 15 ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage S14-0624-Rev. B, 24-Mar-14 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 67874 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA907EDJT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.5 ID = 4.7 A VDS = 5 V 8 6 VDS = 10 V VDS = 16 V 4 2 3 6 9 12 15 VGS = 4.5 V 1.3 1.2 VGS = 2.5 V 1.1 1.0 0.9 0.8 0 0 ID = 3.6 A 1.4 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 0.7 - 50 18 - 25 0 Qg - Total Gate Charge (nC) 75 100 125 150 On-Resistance vs. Junction Temperature 100 0.20 10 R DS(on) - On-Resistance (Ω) IS - Source Current (A) 50 TJ - Junction Temperature (°C) Gate Charge TJ = 150 °C 1 0.1 0.0 25 TJ = 25 °C 0.15 ID = 3.6 A; TJ = 125 °C ID = 3.6 A; TJ = 25 °C 0.10 ID = 1 A; TJ = 125 °C ID = 1 A; TJ = 25 °C 0.05 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 20 0.9 0.8 15 Power (W) VGS(th) (V) 0.7 0.6 ID = 250 μA 0.5 10 5 0.4 0.3 - 50 - 25 0 25 50 75 TJ - Temperature (°C) Threshold Voltage S14-0624-Rev. B, 24-Mar-14 100 125 150 0 0.001 0.01 0.1 1 10 100 1000 Pulse (s) Single Pulse Power, Junction-to-Ambient Document Number: 67874 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA907EDJT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 Limited by RDS(on)* ID - Drain Current (A) 10 100 μs 1 1 ms 10 ms 0.1 100 ms 1s 10 s DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 8 12 Power Dissipation (W) ID - Drain Current (A) 10 8 6 Package Limited 4 6 4 2 2 0 0 0 25 50 75 100 125 150 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 125 150 * The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S14-0624-Rev. B, 24-Mar-14 Document Number: 67874 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA907EDJT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 110 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67874. S14-0624-Rev. B, 24-Mar-14 Document Number: 67874 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix Case Outline for PowerPAK® SC70T D A b e PIN3 PIN1 T L PIN3 K E2 E2 D3 D2 b PIN2 D2 D2 K K E4 E3 K4 L PIN2 E PIN1 E2 e Terminal #1 Topside View PIN6 PIN6 PIN4 PIN5 K1 K2 C PIN4 K2 K1 Backside View of Single A PIN5 K2 A1 K3 Backside View of Dual Z Detail Z Z Side View SINGLE PAD DIM. MIN. 0.525 0 0.23 0.15 1.98 0.85 0.135 1.98 1.40 0.345 0.425 MILLIMETERS NOM. MAX. 0.60 0.65 0.05 0.30 0.38 0.20 0.25 2.05 2.15 0.95 1.05 0.235 0.335 2.05 2.15 1.50 1.60 0.395 0.445 0.475 0.525 0.65 BSC 0.275 TYP. 0.400 TYP. 0.240 TYP. 0.225 TYP. 0.355 TYP. 0.275 0.375 A A1 b C D D2 D3 E E2 E3 E4 e K K1 K2 K3 K4 L 0.175 T ECN: C12-0160-Rev. B, 05-Mar-12 DWG: 5994 INCHES MIN. NOM. 0.0206 0.024 0 0.009 0.012 0.006 0.008 0.078 0.081 0.033 0.037 0.005 0.009 0.078 0.081 0.055 0.059 0.014 0.016 0.017 0.019 0.026 BSC 0.011 TYP. 0.016 TYP. 0.009 TYP. 0.009 TYP. 0.014 TYP. 0.007 0.011 DUAL PAD MAX. 0.026 0.002 0.015 0.010 0.085 0.041 0.013 0.085 0.063 0.018 0.021 MIN. 0.525 0 0.23 0.15 1.98 0.513 1.98 0.85 MILLIMETERS NOM. MAX. 0.60 0.65 0.05 0.30 0.38 0.20 0.25 2.05 2.15 0.613 0.713 2.05 0.95 2.15 1.05 MIN. 0.0206 0 0.009 0.006 0.078 0.020 INCHES NOM. 0.024 0.012 0.008 0.081 0.024 MAX. 0.026 0.002 0.015 0.010 0.085 0.028 0.078 0.033 0.081 0.037 0.085 0.041 0.65 BSC 0.275 TYP. 0.320 TYP. 0.252 TYP. 0.015 0.175 0.05 0.275 0.10 0.026 BSC 0.011 TYP. 0.013 TYP. 0.010 TYP. 0.375 0.15 0.007 0.002 0.011 0.004 0.015 0.006 Notes 1. All dimensions are in millimeter. Millimeters will govern. 2. Package outline exculsive of mold flash and metal burr. 3. Package outline inclusive of plating Revision: 05-Mar-12 1 Document Number: 65370 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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