SiA445EDJT Datasheet

SiA445EDJT
www.vishay.com
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
-20
RDS(on) () MAX.
ID (A)
0.0167 at VGS = -4.5 V
-12 a
0.0185 at VGS = -3.7 V
-12 a
0.0310 at VGS = -2.5 V
-12 a
Qg (TYP.)
22 nC
Thin PowerPAK® SC-70-6L Single
S
4
D
5
D
6
0.6 mm
• TrenchFET® power MOSFET
• Thermally enhanced PowerPAK® SC-70 package
- Small footprint area
- Low on-resistance
• Ultra-thin 0.6 mm height
• 100 % Rg tested
• Built in ESD protection with Zener diode
• Typical ESD performance: 2000 V
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
05
2.
S
7
m
m
1
3
G
m
5m
2.0
Top View
2
D
1
D
Bottom View
S
• Smart phones, tablet PCs, mobile
computing 
- Battery switch
- Charger switch
- Load switch
Marking Code: B6
Ordering Information:
SiA445EDJT-T1-GE3 (lead (Pb)-free and halogen-free)
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
-20
Gate-Source Voltage
VGS
± 12
TC = 70 °C
TA = 25 °C
-12 a
ID
-11.8 b, c
-9.5 b, c
TA = 70 °C
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
IDM
TC = 25 °C
TA = 25 °C
Maximum Power Dissipation
TA = 25 °C
-12 a
IS
-2.9 b, c
19
12
PD
W
3.5 b, c
2.2 b, c
TA = 70 °C
Operating Junction and Storage Temperature Range
A
-50
TC = 25 °C
TC = 70 °C
V
-12 a
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
UNIT
TJ, Tstg
-55 to +150
Soldering Recommendations (Peak temperature) d, e
°C
260
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
Maximum Junction-to-Ambient b, f
t5s
RthJA
28
36
Maximum Junction-to-Case (Drain)
Steady state
RthJC
5.3
6.5
UNIT
°C/W
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
S16-1069-Rev. A, 30-May-16
Document Number: 67437
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA445EDJT
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = -250 μA
-20
-
-
-
V
-11
-
-
2.1
-
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
Gate-Source Leakage
IGSS
Zero Gate Voltage Drain Current
On-State Drain Current
ID = -250 μA
a
Drain-Source On-State Resistance a
Forward Transconductance a
IDSS
ID(on)
RDS(on)
gfs
VDS = VGS, ID = -250 μA
-0.5
-
-1.2
VDS = 0 V, VGS = ± 12 V
-
-
± 60
VDS = 0 V, VGS = ± 4.5 V
-
-
± 0.5
VDS = -20 V, VGS = 0 V
-
-
-1
VDS = -20 V, VGS = 0 V, TJ = 55 °C
-
-
-10
VDS  -5 V, VGS = -4.5 V
-20
-
-
VGS = -4.5 V, ID = -7 A
-
0.0138
0.0167
VGS = -3.7 V, ID = -5 A
-
0.0153
0.0185
VGS = -2.5 V, ID = -5 A
-
0.0220
0.0310
VDS = -10 V, ID = -7 A
-
34
-
-
2180
-
VDS = -10 V, VGS = 0 V, f = 1 MHz
-
275
-
-
261
-
VDS = -10 V, VGS = -10 V, ID = -10 A
-
46
69
mV/°C
V
μA
A

S
Dynamic b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-
22
35
VDS = -10 V, VGS = -4.5 V, ID = -10 A
-
3.7
-
-
5.9
-
f = 1 MHz
1.2
6
12
-
25
50
-
25
50
td(on)
tr
td(off)
VDD = -10 V, RL = 1 
ID  -10 A, VGEN = -4.5 V, Rg = 1 
pF
nC

-
50
100
tf
-
25
50
td(on)
-
7
15
-
20
40
-
60
120
-
25
50
-
-
-12
-
-
-50
-
-0.8
-1.2
V
-
20
40
ns
-
10
20
nC
-
11
-
-
9
-
tr
td(off)
VDD = -10 V, RL = 1 
ID  -10 A, VGEN = -10 V, Rg = 1 
tf
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current (t = 100 μs)
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
IS = -10 A, VGS = 0 V
IF = -10 A, dI/dt = 100 A/μs,
TJ = 25 °C
A
ns
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.







Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-1069-Rev. A, 30-May-16
Document Number: 67437
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA445EDJT
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
15.0
10-2
10000
TJ = 25 °C
6.0
100
10-4
TJ = 150 °C
1000
10-5
1st line
2nd line
9.0
2nd line
IGSS - Gate Current (A)
1000
1st line
2nd line
2nd line
IGSS - Gate Current (mA)
10-3
12.0
10-6
10-7
TJ = 25 °C
100
10-8
3.0
10-9
10-10
10
0
0
2
4
6
8
10
12
14
10
0
16
2
4
6
8
10
12
14
16
VGS - Gate-to-Source Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
Axis Title
Axis Title
50
50
10000
10000
VGS = 5 V thru 3 V
40
20
VGS = 2 V
100
10
1000
30
1st line
2nd line
1000
30
2nd line
ID - Drain Current (A)
VGS = 2.5 V
1st line
2nd line
2nd line
ID - Drain Current (A)
40
20
100
TC = 25 °C
10
VGS = 1.5 V
TC = 125 °C
0
0
1
2
3
4
TC = -55 °C
0
10
5
10
0
0.5
1
1.5
2
2.5
VDS - Drain-to-Source Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
3
Axis Title
0.05
10000
3500
10000
VGS = 2.5 V
0.02
VGS = 3.7 V
100
2500
Ciss
2000
1500
100
1000
VGS = 4.5 V
0.01
1000
1st line
2nd line
0.03
2nd line
C - Capacitance (pF)
1000
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
3000
0.04
Coss
500
Crss
0
10
0
10
20
30
40
50
0
10
0
5
10
15
ID - Drain Current (A)
2nd line
VDS - Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current
Capacitance
S16-1069-Rev. A, 30-May-16
20
Document Number: 67437
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA445EDJT
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
1.5
1000
6
VDS = 10 V
4
VDS = 5 V
2
100
VDS = 16 V
0
1.4
10
20
30
40
VGS = 4.5 V, 3.7 V
1.3
1000
1.2
VGS = 2.5 V
1.1
1.0
100
0.9
0.8
0.7
10
0
10000
ID = 7 A
1st line
2nd line
ID = 10 A
8
2nd line
RDS(on) - On-Resistance (Normalized)
10000
1st line
2nd line
2nd line
VGS - Gate-to-Source Voltage (V)
10
10
-50
50
-25
0
25
50
75
100 125 150
Qg - Total Gate Charge (nC)
2nd line
TJ - Junction Temperature (°C)
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
Axis Title
Axis Title
100
10000
10000
0.08
TJ = 25 °C
1
100
0.1
0.06
1000
0.04
0.2
0.4
0.6
0.8
1.0
100
TJ = 125 °C
0.02
TJ = 25 °C
10
0
1st line
2nd line
1000
2nd line
RDS(on) - On-Resistance (Ω)
TJ = 150 °C
10
1st line
2nd line
2nd line
IS - Source Current (A)
ID = 7 A
0
10
0
1.2
1
2
3
4
5
VSD - Source-to-Drain Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
1.0
30
10000
25
1st line
2nd line
2nd line
VGS(th) (V)
1000
0.8
0.7
ID = 250 μA
100
0.6
Power (W)
0.9
20
15
10
5
0.5
10
-50
-25
0
25
50
75
100 125 150
TJ - Temperature (°C)
2nd line
Threshold Voltage
S16-1069-Rev. A, 30-May-16
0
0.001
0.01
0.1
1
10
Time (s)
100
1000
Single Pulse Power, Junction-to-Ambient
Document Number: 67437
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA445EDJT
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
100
10000
IDM limited
Limited by RDS(on) (1)
100 μs
2nd line
ID - Drain Current (A)
10
1000
1
1st line
2nd line
1 ms
10 ms
100 ms
1s
10 s
DC
0.1
100
BVDSS limited
TA = 25 °C
Single pulse
0.01
10
0.1
(1)
1
10
100
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Axis Title
20
10000
35
1000
20
15
100
Package limited
10
Power Dissipation (W)
25
1st line
2nd line
2nd line
ID - Drain Current (A)
30
15
10
5
5
0
10
0
25
50
75
100
TC - Case Temperature (°C)
2nd line
Current Derating a
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
150
Power Derating
Note
a. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-1069-Rev. A, 30-May-16
Document Number: 67437
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA445EDJT
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
0.02
t2
1. Duty cycle, D =
t1
t2
2. Per unit base = R thJA = 80 C/W
3. TJM - TA = PDMZthJA(t)
Single pulse
0.01
10-4
10-3
4. Surface mounted
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
1
0.1
10-4
Duty cycle = 0.5
0.2
0.1
0.05
0.02
Single pulse
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case




















Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67437.
S16-1069-Rev. A, 30-May-16
Document Number: 67437
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
Case Outline for PowerPAK® SC70T
D
A
b
e
PIN3
PIN1
T
L
PIN3
K
E2
E2
D3
D2
b
PIN2
D2
D2
K
K E4 E3 K4 L
PIN2
E
PIN1
E2
e
Terminal #1
Topside View
PIN6
PIN6
PIN4
PIN5
K1
K2
C
PIN4
K2
K1
Backside View of Single
A
PIN5
K2
A1
K3
Backside View of Dual
Z
Detail Z
Z
Side View
SINGLE PAD
DIM.
MIN.
0.525
0
0.23
0.15
1.98
0.85
0.135
1.98
1.40
0.345
0.425
MILLIMETERS
NOM.
MAX.
0.60
0.65
0.05
0.30
0.38
0.20
0.25
2.05
2.15
0.95
1.05
0.235
0.335
2.05
2.15
1.50
1.60
0.395
0.445
0.475
0.525
0.65 BSC
0.275 TYP.
0.400 TYP.
0.240 TYP.
0.225 TYP.
0.355 TYP.
0.275
0.375
A
A1
b
C
D
D2
D3
E
E2
E3
E4
e
K
K1
K2
K3
K4
L
0.175
T
ECN: C12-0160-Rev. B, 05-Mar-12
DWG: 5994
INCHES
MIN.
NOM.
0.0206
0.024
0
0.009
0.012
0.006
0.008
0.078
0.081
0.033
0.037
0.005
0.009
0.078
0.081
0.055
0.059
0.014
0.016
0.017
0.019
0.026 BSC
0.011 TYP.
0.016 TYP.
0.009 TYP.
0.009 TYP.
0.014 TYP.
0.007
0.011
DUAL PAD
MAX.
0.026
0.002
0.015
0.010
0.085
0.041
0.013
0.085
0.063
0.018
0.021
MIN.
0.525
0
0.23
0.15
1.98
0.513
1.98
0.85
MILLIMETERS
NOM.
MAX.
0.60
0.65
0.05
0.30
0.38
0.20
0.25
2.05
2.15
0.613
0.713
2.05
0.95
2.15
1.05
MIN.
0.0206
0
0.009
0.006
0.078
0.020
INCHES
NOM.
0.024
0.012
0.008
0.081
0.024
MAX.
0.026
0.002
0.015
0.010
0.085
0.028
0.078
0.033
0.081
0.037
0.085
0.041
0.65 BSC
0.275 TYP.
0.320 TYP.
0.252 TYP.
0.015
0.175
0.05
0.275
0.10
0.026 BSC
0.011 TYP.
0.013 TYP.
0.010 TYP.
0.375
0.15
0.007
0.002
0.011
0.004
0.015
0.006
Notes
1. All dimensions are in millimeter. Millimeters will govern.
2. Package outline exculsive of mold flash and metal burr.
3. Package outline inclusive of plating
Revision: 05-Mar-12
1
Document Number: 65370
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000