SiA445EDJT www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) () MAX. ID (A) 0.0167 at VGS = -4.5 V -12 a 0.0185 at VGS = -3.7 V -12 a 0.0310 at VGS = -2.5 V -12 a Qg (TYP.) 22 nC Thin PowerPAK® SC-70-6L Single S 4 D 5 D 6 0.6 mm • TrenchFET® power MOSFET • Thermally enhanced PowerPAK® SC-70 package - Small footprint area - Low on-resistance • Ultra-thin 0.6 mm height • 100 % Rg tested • Built in ESD protection with Zener diode • Typical ESD performance: 2000 V • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS 05 2. S 7 m m 1 3 G m 5m 2.0 Top View 2 D 1 D Bottom View S • Smart phones, tablet PCs, mobile computing - Battery switch - Charger switch - Load switch Marking Code: B6 Ordering Information: SiA445EDJT-T1-GE3 (lead (Pb)-free and halogen-free) G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ± 12 TC = 70 °C TA = 25 °C -12 a ID -11.8 b, c -9.5 b, c TA = 70 °C Pulsed Drain Current (t = 100 μs) Continuous Source-Drain Diode Current IDM TC = 25 °C TA = 25 °C Maximum Power Dissipation TA = 25 °C -12 a IS -2.9 b, c 19 12 PD W 3.5 b, c 2.2 b, c TA = 70 °C Operating Junction and Storage Temperature Range A -50 TC = 25 °C TC = 70 °C V -12 a TC = 25 °C Continuous Drain Current (TJ = 150 °C) UNIT TJ, Tstg -55 to +150 Soldering Recommendations (Peak temperature) d, e °C 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM Maximum Junction-to-Ambient b, f t5s RthJA 28 36 Maximum Junction-to-Case (Drain) Steady state RthJC 5.3 6.5 UNIT °C/W Notes a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 °C/W. S16-1069-Rev. A, 30-May-16 Document Number: 67437 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA445EDJT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = -250 μA -20 - - - V -11 - - 2.1 - Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) Gate-Source Leakage IGSS Zero Gate Voltage Drain Current On-State Drain Current ID = -250 μA a Drain-Source On-State Resistance a Forward Transconductance a IDSS ID(on) RDS(on) gfs VDS = VGS, ID = -250 μA -0.5 - -1.2 VDS = 0 V, VGS = ± 12 V - - ± 60 VDS = 0 V, VGS = ± 4.5 V - - ± 0.5 VDS = -20 V, VGS = 0 V - - -1 VDS = -20 V, VGS = 0 V, TJ = 55 °C - - -10 VDS -5 V, VGS = -4.5 V -20 - - VGS = -4.5 V, ID = -7 A - 0.0138 0.0167 VGS = -3.7 V, ID = -5 A - 0.0153 0.0185 VGS = -2.5 V, ID = -5 A - 0.0220 0.0310 VDS = -10 V, ID = -7 A - 34 - - 2180 - VDS = -10 V, VGS = 0 V, f = 1 MHz - 275 - - 261 - VDS = -10 V, VGS = -10 V, ID = -10 A - 46 69 mV/°C V μA A S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time - 22 35 VDS = -10 V, VGS = -4.5 V, ID = -10 A - 3.7 - - 5.9 - f = 1 MHz 1.2 6 12 - 25 50 - 25 50 td(on) tr td(off) VDD = -10 V, RL = 1 ID -10 A, VGEN = -4.5 V, Rg = 1 pF nC - 50 100 tf - 25 50 td(on) - 7 15 - 20 40 - 60 120 - 25 50 - - -12 - - -50 - -0.8 -1.2 V - 20 40 ns - 10 20 nC - 11 - - 9 - tr td(off) VDD = -10 V, RL = 1 ID -10 A, VGEN = -10 V, Rg = 1 tf ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current (t = 100 μs) ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C IS = -10 A, VGS = 0 V IF = -10 A, dI/dt = 100 A/μs, TJ = 25 °C A ns Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-1069-Rev. A, 30-May-16 Document Number: 67437 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA445EDJT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 15.0 10-2 10000 TJ = 25 °C 6.0 100 10-4 TJ = 150 °C 1000 10-5 1st line 2nd line 9.0 2nd line IGSS - Gate Current (A) 1000 1st line 2nd line 2nd line IGSS - Gate Current (mA) 10-3 12.0 10-6 10-7 TJ = 25 °C 100 10-8 3.0 10-9 10-10 10 0 0 2 4 6 8 10 12 14 10 0 16 2 4 6 8 10 12 14 16 VGS - Gate-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage Axis Title Axis Title 50 50 10000 10000 VGS = 5 V thru 3 V 40 20 VGS = 2 V 100 10 1000 30 1st line 2nd line 1000 30 2nd line ID - Drain Current (A) VGS = 2.5 V 1st line 2nd line 2nd line ID - Drain Current (A) 40 20 100 TC = 25 °C 10 VGS = 1.5 V TC = 125 °C 0 0 1 2 3 4 TC = -55 °C 0 10 5 10 0 0.5 1 1.5 2 2.5 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title 3 Axis Title 0.05 10000 3500 10000 VGS = 2.5 V 0.02 VGS = 3.7 V 100 2500 Ciss 2000 1500 100 1000 VGS = 4.5 V 0.01 1000 1st line 2nd line 0.03 2nd line C - Capacitance (pF) 1000 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 3000 0.04 Coss 500 Crss 0 10 0 10 20 30 40 50 0 10 0 5 10 15 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current Capacitance S16-1069-Rev. A, 30-May-16 20 Document Number: 67437 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA445EDJT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 1.5 1000 6 VDS = 10 V 4 VDS = 5 V 2 100 VDS = 16 V 0 1.4 10 20 30 40 VGS = 4.5 V, 3.7 V 1.3 1000 1.2 VGS = 2.5 V 1.1 1.0 100 0.9 0.8 0.7 10 0 10000 ID = 7 A 1st line 2nd line ID = 10 A 8 2nd line RDS(on) - On-Resistance (Normalized) 10000 1st line 2nd line 2nd line VGS - Gate-to-Source Voltage (V) 10 10 -50 50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature Axis Title Axis Title 100 10000 10000 0.08 TJ = 25 °C 1 100 0.1 0.06 1000 0.04 0.2 0.4 0.6 0.8 1.0 100 TJ = 125 °C 0.02 TJ = 25 °C 10 0 1st line 2nd line 1000 2nd line RDS(on) - On-Resistance (Ω) TJ = 150 °C 10 1st line 2nd line 2nd line IS - Source Current (A) ID = 7 A 0 10 0 1.2 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title 1.0 30 10000 25 1st line 2nd line 2nd line VGS(th) (V) 1000 0.8 0.7 ID = 250 μA 100 0.6 Power (W) 0.9 20 15 10 5 0.5 10 -50 -25 0 25 50 75 100 125 150 TJ - Temperature (°C) 2nd line Threshold Voltage S16-1069-Rev. A, 30-May-16 0 0.001 0.01 0.1 1 10 Time (s) 100 1000 Single Pulse Power, Junction-to-Ambient Document Number: 67437 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA445EDJT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 100 10000 IDM limited Limited by RDS(on) (1) 100 μs 2nd line ID - Drain Current (A) 10 1000 1 1st line 2nd line 1 ms 10 ms 100 ms 1s 10 s DC 0.1 100 BVDSS limited TA = 25 °C Single pulse 0.01 10 0.1 (1) 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Axis Title 20 10000 35 1000 20 15 100 Package limited 10 Power Dissipation (W) 25 1st line 2nd line 2nd line ID - Drain Current (A) 30 15 10 5 5 0 10 0 25 50 75 100 TC - Case Temperature (°C) 2nd line Current Derating a 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) 150 Power Derating Note a. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S16-1069-Rev. A, 30-May-16 Document Number: 67437 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA445EDJT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty cycle, D = t1 t2 2. Per unit base = R thJA = 80 C/W 3. TJM - TA = PDMZthJA(t) Single pulse 0.01 10-4 10-3 4. Surface mounted 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 0.1 10-4 Duty cycle = 0.5 0.2 0.1 0.05 0.02 Single pulse 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67437. S16-1069-Rev. A, 30-May-16 Document Number: 67437 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix Case Outline for PowerPAK® SC70T D A b e PIN3 PIN1 T L PIN3 K E2 E2 D3 D2 b PIN2 D2 D2 K K E4 E3 K4 L PIN2 E PIN1 E2 e Terminal #1 Topside View PIN6 PIN6 PIN4 PIN5 K1 K2 C PIN4 K2 K1 Backside View of Single A PIN5 K2 A1 K3 Backside View of Dual Z Detail Z Z Side View SINGLE PAD DIM. MIN. 0.525 0 0.23 0.15 1.98 0.85 0.135 1.98 1.40 0.345 0.425 MILLIMETERS NOM. MAX. 0.60 0.65 0.05 0.30 0.38 0.20 0.25 2.05 2.15 0.95 1.05 0.235 0.335 2.05 2.15 1.50 1.60 0.395 0.445 0.475 0.525 0.65 BSC 0.275 TYP. 0.400 TYP. 0.240 TYP. 0.225 TYP. 0.355 TYP. 0.275 0.375 A A1 b C D D2 D3 E E2 E3 E4 e K K1 K2 K3 K4 L 0.175 T ECN: C12-0160-Rev. B, 05-Mar-12 DWG: 5994 INCHES MIN. NOM. 0.0206 0.024 0 0.009 0.012 0.006 0.008 0.078 0.081 0.033 0.037 0.005 0.009 0.078 0.081 0.055 0.059 0.014 0.016 0.017 0.019 0.026 BSC 0.011 TYP. 0.016 TYP. 0.009 TYP. 0.009 TYP. 0.014 TYP. 0.007 0.011 DUAL PAD MAX. 0.026 0.002 0.015 0.010 0.085 0.041 0.013 0.085 0.063 0.018 0.021 MIN. 0.525 0 0.23 0.15 1.98 0.513 1.98 0.85 MILLIMETERS NOM. MAX. 0.60 0.65 0.05 0.30 0.38 0.20 0.25 2.05 2.15 0.613 0.713 2.05 0.95 2.15 1.05 MIN. 0.0206 0 0.009 0.006 0.078 0.020 INCHES NOM. 0.024 0.012 0.008 0.081 0.024 MAX. 0.026 0.002 0.015 0.010 0.085 0.028 0.078 0.033 0.081 0.037 0.085 0.041 0.65 BSC 0.275 TYP. 0.320 TYP. 0.252 TYP. 0.015 0.175 0.05 0.275 0.10 0.026 BSC 0.011 TYP. 0.013 TYP. 0.010 TYP. 0.375 0.15 0.007 0.002 0.011 0.004 0.015 0.006 Notes 1. All dimensions are in millimeter. Millimeters will govern. 2. Package outline exculsive of mold flash and metal burr. 3. Package outline inclusive of plating Revision: 05-Mar-12 1 Document Number: 65370 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000