SiA430DJT Datasheet

SiA430DJT
www.vishay.com
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
20
RDS(on) (Ω) MAX.
ID (A) b, c
0.0135 at VGS = 10 V
12 a
0.0185 at VGS = 4.5 V
10.8
• TrenchFET® power MOSFET
Qg (Typ.)
• Thermally enhanced PowerPAK® SC-70 package
- Small footprint area
- Ultra-thin 0.6 mm height
5.3 nC
• 100 % Rg tested
Thin PowerPAK® SC-70-6L Single
S
4
• Material categorization:
for definitions of compliance
www.vishay.com/doc?99912
D
6
D
5
please
APPLICATIONS
0.6 mm
05
2.
S
7
m
m
1
3
G
m
5m
2.0
Top View
2
D
see
D
• Load switch
1
D
• DC/DC conversion
G
Bottom View
Marking Code: AY
Ordering Information:
SiA430DJT-T1-GE3 (Lead (Pb)-free and halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
± 20
TC = 70 °C
12 a
ID
TA = 25 °C
12 a, b, c
10.1 b, c
TA = 70 °C
Pulsed Drain Current (t = 100 μs)
IDM
TC = 25 °C
Continuous Source-Drain Diode Current
12 a
2.9 b, c
TC = 25 °C
19.2
TC = 70 °C
12.3
PD
TA = 25 °C
W
3.5 b, c
2.2 b, c
TA = 70 °C
Operating Junction and Storage Temperature Range
A
40
IS
TA = 25 °C
Maximum Power Dissipation
V
12 a
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
UNIT
TJ, Tstg
-55 to +150
Soldering Recommendations (Peak Temperature) d, e
°C
260
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
Maximum Junction-to-Ambient b, f
t≤5s
RthJA
28
36
Maximum Junction-to-Case (Drain)
Steady State
RthJC
5.3
6.5
UNIT
°C/W
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The Thin PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
S14-2236-Rev. A, 10-Nov-14
Document Number: 62991
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA430DJT
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
20
-
-
-
V
24
-
-
-5.6
-
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 μA
mV/°C
VGS(th)
VDS = VGS , ID = 250 μA
1
-
3
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current a
ID(on)
Drain-Source On-State Resistance a
Forward Transconductance a
RDS(on)
gfs
VDS = 20 V, VGS = 0 V
-
-
1
VDS = 20 V, VGS = 0 V, TJ = 55 °C
-
-
10
VDS ≥ 5 V, VGS = 10 V
20
-
-
VGS = 10 V, ID = 7 A
-
0.0108
0.0135
VGS = 4.5 V, ID = 5 A
-
0.0146
0.0185
VDS = 10 V, ID = 7 A
-
16
-
-
800
-
VDS = 10 V, VGS = 0 V, f = 1 MHz
-
200
-
-
90
-
VDS = 10 V, VGS = 10 V, ID = 12 A
-
12
18
-
5.3
9
VDS = 10 V, VGS = 4.5 V, ID = 12 A
-
2
-
-
1.4
-
f = 1 MHz
0.5
2.5
5
-
16
25
μA
A
Ω
S
Dynamic b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
VDD = 10 V, RL = 1 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
-
10
15
-
15
25
tf
-
10
15
td(on)
-
10
15
-
8
15
-
17
30
-
8
15
-
-
12
-
-
40
-
0.8
1.2
td(off)
tr
td(off)
VDD = 10 V, RL = 1 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
tf
pF
nC
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current (t = 100 μs)
ISM
Body Diode Voltage
VSD
TC = 25 °C
IS = 5 A, VGS = 0 V
A
V
Body Diode Reverse Recovery Time
trr
-
18
30
ns
Body Diode Reverse Recovery Charge
Qrr
-
7
15
nC
Reverse Recovery Fall Time
ta
-
8
-
Reverse Recovery Rise Time
tb
-
10
-
IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C
ns
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S14-2236-Rev. A, 10-Nov-14
Document Number: 62991
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA430DJT
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted)
40
5
VGS = 10 V thru 5 V
VGS = 4 V
TC = - 55 °C
4
I D - Drain Current (A)
I D - Drain Current (A)
32
24
16
VGS = 3 V
8
3
TC = 125 °C
2
1
TC = 25 °C
0
0
0.0
0.5
1.0
1.5
2.0
0.0
0.5
VDS - Drain-to-Source Voltage (V)
1.0
1.5
2.0
2.5
3.0
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1000
0.025
800
0.020
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
Ciss
VGS = 4.5 V
0.015
VGS = 10 V
600
400
Coss
0.010
200
Crss
0
0.005
0
8
16
24
32
0
40
10
15
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
20
1.6
10
RDS(on) - On-Resistance (Normalized)
ID = 12 A
VGS - Gate-to-Source Voltage (V)
5
I D - Drain Current (A)
VDS = 10 V
8
VDS = 5 V
6
VDS = 15 V
4
2
0
0
3
6
9
Qg - Total Gate Charge (nC)
Gate Charge
S14-2236-Rev. A, 10-Nov-14
12
ID = 7 A
VGS = 10 V
1.4
1.2
1.0
0.8
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 62991
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA430DJT
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted)
100
0.055
10
0.045
RDS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 5 A
TJ = 25 °C
TJ = 150 °C
1
0.1
0.01
0.001
0.0
TJ = - 50 °C
0.035
0.025
TJ = 125 °C
0.015
TJ = 25 °C
0.005
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
4
5
6
7
8
9
10
On-Resistance vs. Gate-to-Source Voltage
0.3
30
25
0.1
20
- 0.1
Power (W)
VGS(th) Variance (V)
3
VGS - Gate-to-Source Voltage (V)
ID = 1 mA
- 0.3
15
10
ID = 250 µA
- 0.5
5
- 0.7
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
TJ - Temperature (°C)
Threshold Voltage
0.1
1
Time (s)
10
100
1000
Single Pulse Power (Junction-to-Ambient)
100
10 µs
Limited by RDS(on)*
100 µs
I D - Drain Current (A)
10
1 ms
1
10 ms
100 ms
0.1
TA = 25 °C
Single Pulse
0.01
0.1
DC
BVDSS
Limited
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S14-2236-Rev. A, 10-Nov-14
Document Number: 62991
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA430DJT
www.vishay.com
Vishay Siliconix
35
25
28
20
Power (W)
I D - Drain Current (A)
TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted)
21
Package Limited
14
15
10
5
7
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
0
25
50
75
100
125
150
TJ - Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S14-2236-Rev. A, 10-Nov-14
Document Number: 62991
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA430DJT
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 80 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10 -4
10 -3
4. Surface Mounted
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
0.0001
Single Pulse
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62991.
S14-2236-Rev. A, 10-Nov-14
Document Number: 62991
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
Case Outline for PowerPAK® SC70T
D
A
b
e
PIN3
PIN1
T
L
PIN3
K
E2
E2
D3
D2
b
PIN2
D2
D2
K
K E4 E3 K4 L
PIN2
E
PIN1
E2
e
Terminal #1
Topside View
PIN6
PIN6
PIN4
PIN5
K1
K2
C
PIN4
K2
K1
Backside View of Single
A
PIN5
K2
A1
K3
Backside View of Dual
Z
Detail Z
Z
Side View
SINGLE PAD
DIM.
MIN.
0.525
0
0.23
0.15
1.98
0.85
0.135
1.98
1.40
0.345
0.425
MILLIMETERS
NOM.
MAX.
0.60
0.65
0.05
0.30
0.38
0.20
0.25
2.05
2.15
0.95
1.05
0.235
0.335
2.05
2.15
1.50
1.60
0.395
0.445
0.475
0.525
0.65 BSC
0.275 TYP.
0.400 TYP.
0.240 TYP.
0.225 TYP.
0.355 TYP.
0.275
0.375
A
A1
b
C
D
D2
D3
E
E2
E3
E4
e
K
K1
K2
K3
K4
L
0.175
T
ECN: C12-0160-Rev. B, 05-Mar-12
DWG: 5994
INCHES
MIN.
NOM.
0.0206
0.024
0
0.009
0.012
0.006
0.008
0.078
0.081
0.033
0.037
0.005
0.009
0.078
0.081
0.055
0.059
0.014
0.016
0.017
0.019
0.026 BSC
0.011 TYP.
0.016 TYP.
0.009 TYP.
0.009 TYP.
0.014 TYP.
0.007
0.011
DUAL PAD
MAX.
0.026
0.002
0.015
0.010
0.085
0.041
0.013
0.085
0.063
0.018
0.021
MIN.
0.525
0
0.23
0.15
1.98
0.513
1.98
0.85
MILLIMETERS
NOM.
MAX.
0.60
0.65
0.05
0.30
0.38
0.20
0.25
2.05
2.15
0.613
0.713
2.05
0.95
2.15
1.05
MIN.
0.0206
0
0.009
0.006
0.078
0.020
INCHES
NOM.
0.024
0.012
0.008
0.081
0.024
MAX.
0.026
0.002
0.015
0.010
0.085
0.028
0.078
0.033
0.081
0.037
0.085
0.041
0.65 BSC
0.275 TYP.
0.320 TYP.
0.252 TYP.
0.015
0.175
0.05
0.275
0.10
0.026 BSC
0.011 TYP.
0.013 TYP.
0.010 TYP.
0.375
0.15
0.007
0.002
0.011
0.004
0.015
0.006
Notes
1. All dimensions are in millimeter. Millimeters will govern.
2. Package outline exculsive of mold flash and metal burr.
3. Package outline inclusive of plating
Revision: 05-Mar-12
1
Document Number: 65370
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000