New Product Si5458DU Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d, e 0.041 at VGS = 10 V 6 0.051 at VGS = 4.5 V 6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 2.8 nC APPLICATIONS PowerPAK® ChipFET Single • Load Switch • HDD DC/DC 1 2 D G D 7 (1, 2, 3, 6, 7, 8) 4 D D 8 D 3 D D Marking Code AP S 6 XXX Lot Traceability and Date Code S 5 G (4) Part # Code (5) Bottom View S Ordering Information: Si5458DU-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)f, g Continuous Source-Drain Diode Current ID IDM IS PD TJ, Tstg Limit 30 ± 20 6e 6e a, b, e 6 6a, b, e 20 6 2.9a, b 10.4 6.7 3.5a, b 2.2a, b - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t≤5s RthJA 30 36 Maximum Junction-to-Ambienta, c °C/W 10 12 Maximum Junction-to-Case (Drain) Steady State RthJC Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 5 s. c. Maximum under steady state conditions is 72 °C/W. d. Based on TC = 25 °C. e. Package limited. f. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. g. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 65019 S09-1392-Rev. A, 20-Jul-09 www.vishay.com 1 New Product Si5458DU Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ V 32 ID = 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 3 V IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 70 °C 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≥ 5 V, VGS = 10 V -5 1.2 15 µA A VGS = 10 V, ID = 7.1 A 0.034 0.041 VGS = 4.5 V, ID = 6.3 A 0.042 0.051 VDS = 15 V, ID = 7.1 A 15 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Rg 325 VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 7.1 A td(off) pF 6 9 2.8 4.2 1.1 VDS = 15 V, VGS = 4.5 V, ID = 7.1 A f = 1 MHz VDD = 15 V, RL = 2.7 Ω ID ≅ 5.6 A, VGEN = 4.5 V, Rg = 1 Ω 0.6 2.8 5.6 12 18 13 20 16 25 tf 11 17 td(on) 4 8 tr td(off) nC 0.8 td(on) tr 60 30 VDD = 15 V, RL = 2.7 Ω ID ≅ 5.6 A, VGEN = 10 V, Rg = 1 Ω tf 9 18 11 20 8 15 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 1.2 20 IS = 5.6 A, VGS = 0 V IF = 5.6 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 11 20 ns 4 8 nC 6 5 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65019 S09-1392-Rev. A, 20-Jul-09 New Product Si5458DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 5 VGS = 10 V thru 4 V 4 I D - Drain Current (A) I D - Drain Current (A) 15 10 VGS = 3 V 5 3 2 TC = 25 °C 1 TC = 125 °C TC = - 55 °C 0 0.0 0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 400 0.06 300 0.05 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) Ciss VGS = 4.5 V 0.04 VGS = 10 V 200 0.03 100 0.02 0 0 5 10 15 Coss Crss 0 20 5 ID - Drain Current (A) 10 15 25 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.7 10 ID = 7.1 A VGS = 10 V; ID = 7.1 A 1.5 6 VDS = 15 V VDS = 24 V 4 (Normalized) 8 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 20 1.3 1.1 VGS = 4.5 V; ID = 6.3 A 0.9 2 0 0 1 2 3 4 Qg - Total Gate Charge (nC) Gate Charge Document Number: 65019 S09-1392-Rev. A, 20-Jul-09 5 6 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si5458DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.10 10 TJ = 150 °C TJ = 25 °C 1 0.1 0.0 0.08 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 100 0.06 TJ = 125 °C 0.04 TJ = 25 °C 0.02 0.00 0.3 0.6 0.9 1.2 0 1.5 2 VSD - Source-to-Drain Voltage (V) 8 10 VGS - Gate-to-Source Voltage (V) 2.3 30 2.1 25 1.9 20 Power (W) VGS(th) (V) 6 On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage ID = 250 µA 1.7 15 1.5 10 1.3 5 1.1 - 50 4 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.01 1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 10 100 100 I D - Drain Current (A) Limited by RDS(on)* 10 100 µs 1 1 ms 10 ms 100 ms 1 s, 10 s 0.1 DC BVDSS Limited TA = 25 °C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 65019 S09-1392-Rev. A, 20-Jul-09 New Product Si5458DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 15 I D - Drain Current (A) 12 9 Package Limited 6 3 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 2.4 15 12 9 Power (W) Power (W) 1.8 6 1.2 0.6 3 0.0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65019 S09-1392-Rev. A, 20-Jul-09 www.vishay.com 5 New Product Si5458DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 72 °C/W Single Pulse 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 10 000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 10 -4 0.02 Single Pulse 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65019. www.vishay.com 6 Document Number: 65019 S09-1392-Rev. A, 20-Jul-09 Package Information www.vishay.com Vishay Siliconix PowerPAK® ChipFET® Case Outline D (7) (6) (5) (1) (2) (3) (4) E (8) Pin #1 indicator Side view of single e b H D1 D(2) D2 K D(3) L G(4) K1 D2 SI(1) GI(2) S2(3) D1(8) D1(7) D2(6) Detail Z G2(4) K2 L D(1) A1 C A Z Side view of dual E1 E2 E3 H D3 D(8) D(7) D(6) S(5) K3 Backside view of dual pad Backside view of single pad DIM. D2(5) MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.85 0.028 0.030 0.033 A1 0 - 0.05 0 - 0.002 b 0.25 0.30 0.35 0.010 0.012 0.014 C 0.15 0.20 0.25 0.006 0.008 0.010 D 2.92 3.00 3.08 0.115 0.118 0.121 D1 1.75 1.87 2.00 0.069 0.074 0.079 D2 1.07 1.20 1.32 0.042 0.047 0.052 D3 0.20 0.25 0.30 0.008 0.010 0.012 E 1.82 1.90 1.98 0.072 0.075 0.078 E1 1.38 1.50 1.63 0.054 0.059 0.064 E2 0.92 1.05 1.17 0.036 0.041 0.046 E3 0.45 0.50 0.55 0.018 0.020 0.022 e 0.65 BSC 0.026 BSC H 0.15 0.20 0.25 0.006 0.008 0.010 K 0.25 - - 0.010 - - K1 0.30 - - 0.012 - - K2 0.20 - - 0.008 - - K3 0.20 - - 0.008 - - L 0.30 0.35 0.40 0.012 0.014 0.016 C14-0630-Rev. E, 21-Jul-14 DWG: 5940 Note • Millimeters will govern Document Number: 73203 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 21-Jul-14 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® ChipFET® Single 0.225 (0.009) 0.350 (0.014) 0.650 (0.026) 0.200 (0.008) 0.300 (0.012) 0.300 (0.012) 0.100 (0.004) 1.500 (0.059) 1.900 (0.075) 0.250 (0.010) 0.500 (0.020) 0.350 (0.014) 0.350 (0.014) 1.870 (0.074) 0.305 (0.012) 2.575 (0.101) Recommended Minimum Pads Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 69948 Revision: 21-Jan-08 www.vishay.com 9 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000