DG417/418/419 Precision CMOS Analog Switches Features Benefits Applications Wide Dynamic Range Low Signal Errors and Distortion Break-Before-Make Switching Action Simple Interfacing Reduced Board Space Improved Reliability 15-V Analog Signal Range On-Resistance—rDS(on): 20 Fast Switching Action—tON: 100 ns Ultra Low Power Requirements—PD:35 nW TTL and CMOS Compatible MiniDIP and SOIC Packaging 44-V Supply Max Rating Precision Test Equipment Precision Instrumentation Battery Powered Systems Sample-and-Hold Circuits Military Radios Guidance and Control Systems Hard Disk Drives Description The DG417/418/419 monolithic CMOS analog switches were designed to provide high performance switching of analog signals. Combining low power, low leakages, high speed, low on-resistance and small physical size, the DG417 series is ideally suited for portable and battery powered industrial and military applications requiring high performance and efficient use of board space. voltage silicon gate (HVSG) process. Break-before-make is guaranteed for the DG419, which is an SPDT configuration. An epitaxial layer prevents latchup. To achieve high-voltage ratings and superior switching performance, the DG417 series is built on Siliconix’s high The DG417 and DG418 respond to opposite control logic levels as shown in the Truth Table. Functional Block Diagram and Pin Configuration Truth Table DG417 Dual-In-Line and SOIC S 1 8 Logic D NC 2 7 V– GND 3 6 IN V+ 4 5 VL DG417 DG418 0 ON OFF 1 OFF ON Logic “0” = 0.8 V, Logic “1” = 2.4 V Top View DG419 Truth Table—DG419 Dual-In-Line and SOIC D 1 8 S2 S1 2 7 V– GND 3 6 IN V+ 4 5 VL Logic SW1 SW2 0 ON OFF 1 OFF ON Logic “0” = 0.8 V, Logic “1” = 2.4 V Top View Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70051. Siliconix S-52880—Rev. D, 28-Apr-97 1 DG417/418/419 Ordering Information Temp Range Package Part Number DG417/418 8-Pin Plastic MiniDIP –40 to 85_C DG417DJ DG418DJ DG417DY 8-Pin Narrow SOIC DG418DY DG417AK, DG417AK/883 –55 to 125_C 8-Pin CerDIP DG418AK, DG418AK/883 DG419 –40 to 85_C 8-Pin Plastic MiniDIP DG419DJ 8-Pin Narrow SOIC DG419DY –55 to 125_C 8-Pin CerDIP DG419AK, DG419AK/883 Absolute Maximum Ratings Voltages Referenced to V– V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Power Dissipation (Package)b 8-Pin Plastic MiniDIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mW 8-Pin Narrow SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mW 8-Pin CerDIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND –0.3 V) to (V+) + 0.3 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) + 2 V or 30 mA, whichever occurs first Current, (Any Terminal) Continuous . . . . . . . . . . . . . . . . . . . . . . 30 mA Current (S or D) Pulsed 1 ms, 10% duty cycle . . . . . . . . . . . . . 100 mA Storage Temperature (AK Suffix) . . . . . . . . . . . . . . –65 to 150_C (DJ, DY Suffix) . . . . . . . . . . . –65 to 125_C Notes: a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6 mW/_C above 75_C d. Derate 6.5 mW/_C above 25_C e. Derate 12 mW/_C above 75_C Schematic Diagram (Typical Channel) Level Shift/ Drive Figure 1. 2 Siliconix S-52880—Rev. D, 28-Apr-97 DG417/418/419 Specificationsa Test Conditions Unless Otherwise Specified Parameter Symbol A Suffix D Suffix –55 to 125_C –40 to 85_C V+ = 15 V, V– = –15 V VL = 5 V, VIN = 2.4 V, 0.8 Vf Tempb IS = –10 mA, VD = 12.5 V V+ = 13.5 V, V– = –13.5 V Room Full 20 Room Full –0.1 –0.25 –20 0.25 20 –0.25 –5 0.25 5 DG417 DG418 Room Full –0.1 –0.25 –20 0.25 20 –0.25 –5 0.25 5 DG419 Room Full –0.1 –0.75 –60 0.75 60 –0.75 –12 0.75 12 DG417 DG418 Room Full –0.4 –0.4 –40 0.4 40 –0.4 –10 0.4 10 DG419 Room Full –0.4 –0.75 –60 0.75 60 –0.75 –12 0.75 12 Typc Mind Maxd Mind Maxd Unit Analog Switch Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) Full IS(off) Switch Off Leakage Current ID(off) Channel On L k Leakage C Current ID(on) V+ = 16.5 16 5 V, V V– V = –16.5 16 5 V VD = 15.5 V VS = 15.5 V V+ = 16.5 V,, V– = –16.5 V VS = VD = 15.5 15 5 V –15 15 –15 35 45 15 V 35 45 W nA Digital Control Input Current VIN Low IIL Full 0.005 –0.5 0.5 –0.5 0.5 Input Current VIN High IIH Full 0.005 –0.5 0.5 –0.5 0.5 DG417 DG418 Room Full 100 175 250 175 250 DG417 DG418 Room Full 60 145 210 145 210 175 250 175 250 mA Dynamic Characteristics RL = 300 W , CL = 35 pF VS = 10 V See Switching Time Test Circuit Turn-On Time tON Turn-Off Time tOFF Transition Time tTRANS RL = 300 W , CL = 35 pF VS1 = 10 V VS2 = 10 V DG419 Room Full Break-Before-Make Time Delay tD RL = 300 W , CL = 35 pF VS1 = VS2 = 10 V DG419 Room 13 Charge Injection Q CL = 10 nF, Vgen = 0 V, Rgen = 0 W Room 60 Room 8 Source Off Capacitance CS(off) f = 1 MHz MHz, VS = 0 V Drain Off Capacitance Channel On Capacitance CD(off) DG417 DG418 Room 8 CD(on) DG417 DG418 Room 30 DG419 Room 35 f = 1 MHz,, VS = 0 V 5 ns 5 pC ppF Power Supplies Positive Supply Current I+ Room Full 0.001 Negative Supply Current I– Room Full –0.001 Logic Supply Current IL Room Full 0.001 Ground Current IGND Siliconix S-52880—Rev. D, 28-Apr-97 V+ = 16.5 V, V– = –16.5 V VIN = 0 or 5 V Room Full –0.000 1 1 5 –1 –5 1 5 –1 –5 1 5 –1 –5 A mA 1 5 –1 –5 3 DG417/418/419 Specificationsa for Unipolar Supplies Test Conditions Unless Otherwise Specified Parameter Symbol V V– V =0V V+ = 12 V, VL = 5 V, VIN = 2.4 V, 0.8 Vf Tempb Typc A Suffix D Suffix –55 to 125_C –40 to 85_C Mind Maxd Mind Maxd Unit Analog Switch Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) Full IS = –10 mA, VD = 3.8 V V+ = 10.8 V 0 Room 40 Room 110 Room 40 Room 60 Room 5 Room 0.001 Room –0.001 12 0 12 V W Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF RL = 300 W , CL = 35 pF, p , VS = 8 V S Switching S i hi Time Ti T i See Test Ci Circuit Break-Before-Make Time Delay tD RL = 300 W , CL = 35 pF Charge Injection Q CL = 10 nF, Vgen = 0 V, Rgen = 0 W DG419 ns pC Power Supplies Positive Supply Current I+ Negative Supply Current I– Logic Supply Current IL Room 0.001 IGND Room –0.001 Ground Current V+ = 13.2 V, VL = 5.25 V VIN = 0 or 5 V mA Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. 4 Siliconix S-52880—Rev. D, 28-Apr-97 DG417/418/419 Typical Characteristics rDS(on) vs. VD and Supply Voltage 50 rDS(on) vs. Temperature 40 5 V ID = –10 mA 40 TA = 125_C 30 10 V 12 V 15 V 20 rDS(on) ( ) rDS(on) 8 V 30 20 V 25_C 20 –55_C 10 10 0 0 –20 –15 –10 –5 0 5 10 15 20 –15 –10 VD – Drain Voltage (V) Leakage Currents vs. Analog Voltage 30 Q (pC) I (pA) 5 0 500 pF 100 100 pF DG417/418: ID(on) DG419: ID(off), ID(on) 0 –20 –50 –30 –15 –10 –5 0 5 10 –15 15 VD or VS – Drain or Source Voltage (V) 3.5 Input Switching Threshold vs. Supply Voltages 50 42 40 2.5 V+ (V) VL = 7 V 2.0 1.5 30 20 VL = 5 V 1.0 10 0.5 0 (V+) 5 (V–) –5 2 0 10 –10 15 –15 20 –10 Siliconix S-52880—Rev. D, 28-Apr-97 25 –5 30 0 35 0 –10 –5 0 5 10 15 VS – Source Voltage (V) 3.0 VIN (V) 15 1 nF 50 –10 10 CL = 10 nF V+ = 16.5 V V– = –16.5 V VL = 5 V VIN = 0 V 150 DG417/418: ID(off), IS(off) DG419: IS(off) 10 0 Drain Charge Injection 200 V+ = 15 V V– = –15 V VL = 5 V 20 –5 VD – Drain Voltage (V) 40 0 Operating Voltage Range ÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉ 5 V CMOS Compatible F 0 F TTL Compatible VIN = 0.8 V, 2.4 V CMOS Compatible –10 –20 –30 Negative Supply V– (V) F = Voltages Used for Production Testing –40 5 DG417/418/419 Typical Characteristics (Cont’d) Switching Time vs. Temperature V+ = 15 V, V– = –15 V VL = 5 V, VIN = 3 V Pulse 100 Crosstalk and Off Isolation vs. Frequency 140 120 tON 120 DG417/418/419 Source 2 tOFF 60 (dB) t ON , t OFF (ns) 100 80 40 DG419 Source 1 80 60 40 20 V+ = 15 V V– = –15 V VL = 5 V 20 0 0 –55 –40 –20 0 20 40 60 80 100 120 100 1k 10 k Temperature (_C) 100 k 10 M 1M 100 M f – Frequency (Hz) Switching Time vs. Supply Voltages Switching Time vs. V+ 130 80 120 110 60 100 tON V– = 0 V VL = 5 V VIN = 3 V t ON , t OFF (ns) t ON , t OFF (ns) 70 tON 90 V– = 0 V VL = 5 V VIN = 3 V 80 70 60 50 50 tOFF tOFF 40 30 40 ±10 ±11 ±12 ±13 ±14 ±15 ±16 10 11 Supply Voltage (V) 12 13 14 15 16 V+ Supply Voltage (V) Power Supply Currents vs. Switching Frequency 1 mA 10 mA V+ = 15 V, V– = –15 V VL = 5 V, VIN = 5 V, 50% D Cycle 100 nA Supply Current vs. Temperature V+ = 16.5 V, V– = –16.5 V VL = 5 V, VIN = 0 V 1 mA 10 nA I SUPPLY I SUPPLY 100 mA I+, I– 10 mA I+, I– 1 nA 100 pA IL IGND 10 pA 1 mA 1 pA 100 nA 100 1k 10 k 100 k f – Frequency (Hz) 6 1M 10 M 0.1 pA –55 –40 –20 0 20 40 60 80 100 120 Temperature (_C) Siliconix S-52880—Rev. D, 28-Apr-97 DG417/418/419 Test Circuits VO is the steady state output with the switch on. +5 V +15 V Logic Input VL V+ D S 10 V 0V RL 300 V– CL 35 pF –15 V CL (includes fixture and stray capacitance) tOFF Switch Input VS Switch Output 0V VO 90% tON Note: Logic input waveform is inverted for switches that have the opposite logic sense. RL VO = VS tr <20 ns tf <20 ns 50% VO IN GND 3V RL + rDS(on) Figure 2. Switching Time (DG417/418) +5 V +15 V Logic Input VL VS1 VS2 3V V+ S1 0V D VO S2 RL 300 IN GND tr <20 ns tf <20 ns CL 35 pF VS1 = VS2 VO Switch Output V– 90% 0V tD tD CL (includes fixture and stray capacitance) –15 V Figure 3. Break-Before-Make (DG419) +5 V VL VS1 VS2 +15 V V+ S1 D VO Logic Input 3V 0V S2 RL 300 IN GND V– –15 V tr <20 ns tf <20 ns 50% tTRANS CL 35 pF tTRANS VS1 V01 90% Switch Output VS2 V02 10% CL (includes fixture and stray capacitance) VO = VS RL RL + rDS(on) Figure 4. Transition Time (DG419) Siliconix S-52880—Rev. D, 28-Apr-97 7 DG417/418/419 Test Circuits (Cont’d) Rg +5 V +15 V VL S V+ D DVO VO VO IN Vg INX OFF CL 10 nF 3V GND ON V– OFF Q = DVO x CL –15 V Figure 5. Charge Injection C +5 V +15 V VL V+ D C +5 V S1 VS C C Rg = 50 W 50 W VO S2 RL 0.8 V +15 V VL V+ S VS VO D Rg = 50 W IN GND GND C V– RL IN 0V, 2.4 V V– –15 V –15 V XTALK Isolation = 20 log C = RF bypass C VS Off Isolation = 20 log VO Figure 6. Crosstalk (DG419) Figure 7. Off Isolation +5 V +15 V C C VL V+ S VS VS VO D VO Rg = 50 W 0V, 2.4 V RL IN GND V– C –15 V Figure 8. Insertion Loss 8 Siliconix S-52880—Rev. D, 28-Apr-97 DG417/418/419 Test Circuits (Cont’d) +5 V +15 V +15 V C C VL NC C V+ S V+ S2 DG417/418 DG419 Meter V, 2.4 V IN GND V– D2 GND f = 1 MHz C Meter 0 V, 2.4 V IN HP4192A Impedance Analyzer or Equivalent D S1 –15 V HP4192A Impedance Analyzer or Equivalent D1 V– C f = 1 MHz –15 V Figure 9. Source/Drain Capacitances Applications Switched Signal Powers Analog Switch The analog switch in Figure 10 derives power from its input signal, provided the input signal amplitude exceeds 4 V and its frequency exceeds 1 kHz. This circuit is useful when signals have to be routed to either of two remote loads. Only three conductors are required: one for the signal to be switched, one for the control signal and a common return. A positive input pulse turns on the clamping diode D1 and charges C1. The charge stored on C1 is used to power the chip; operation is satisfactory because the switch requires less than 1 mA of stand-by supply current. Loading of the signal source is imperceptible. The DG419’s on-resistance is a low 100 W for a 5-V input signal. D1 V+ Input C1 0.01 mF VL S1 D VOUT S2 RL2 10 kW IN Control DG419 GND V– RL1 10 kW Figure 10. Switched Signal Powers Remote SPDT Analog Switch Siliconix S-52880—Rev. D, 28-Apr-97 9 DG417/418/419 Applications (Cont’d) Micropower UPS Transfer Switch change of state in the analog switch, restoring normal operation. When VCC drops to 3.3 V, the DG417 changes states, closing SW1 and connecting the backup cell, as shown in Figure 11. D1 prevents current from leaking back towards the rest of the circuit. Current consumption by the CMOS analog switch is around 100 pA; this ensures that most of the power available is applied to the memory, where it is really needed. In the stand-by mode, hundreds of mA are sufficient to retain memory data. Programmable Gain Amplifier When the 5-V supply comes back up, the resistor divider senses the presence of at least 3.5 V, and causes a new The DG419, as shown in Figure 12, allows accurate gain selection in a small package. Switching into virtual ground reduces distortion caused by rDS(on) variation as a function of analog signal amplitude. GaAs FET Driver The DG419, as shown in Figure 13 may be used as a GaAs FET driver. It translates a TTL control signal into –8-V, 0-V level outputs to drive the gate. V+ D1 SW1 D VCC (5 V) R1 VSENSE 453 kW VL S + DG417 Memory – IN GND R2 383 kW 3 V Li Cell V– Figure 11. Micropower UPS Circuit +5 V DG419 S1 S2 R1 VL R2 V+ GaAs FET S1 IN D S2 VOUT D VIN DG419 5V – VOUT GND V– + –8 V Figure 12. Programmable Gain Amplifier 10 Figure 13. GaAs FET Driver Siliconix S-52880—Rev. D, 28-Apr-97