Si8441DB Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.080 at VGS = - 4.5 V - 10.5 0.102 at VGS = - 2.5 V - 9.3 0.128 at VGS = - 1.8 V - 3.5 0.198 at VGS = - 1.5 V - 2.5 0.600 at VGS = - 1.2 V - 0.5 VDS (V) - 20 Qg (Typ.) • TrenchFET® Power MOSFET RoHS APPLICATIONS 7.7 nC COMPLIANT • Low Threshold Load Switch for Portable Devices - Low Power Consumption - Increased Battery Life MICRO FOOT Bump Side View S Backside View G 2 6 XXX S 3 S 8441 S 1 G D D 4 5 Device Marking: 8441 xxx = Date/Lot Traceability Code D Ordering Information: Si8441DB-T2-E1 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±5 TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Continuous Source-Drain Diode Current Maximum Power Dissipation TA = 25 °C IS - 4.8a, b - 15 - 2.3a, b 13 TC = 70 °C 8.4 TA = 25 °C PD IR/Convection 2.77a, b W 1.77a, b TJ, Tstg Operating Junction and Storage Temperature Range A - 10.8 TC = 25 °C TA = 70 °C Package Reflow Conditionsc - 8.4 - 3.9a, b IDM TC = 25 °C V - 10.5 TA = 70 °C Pulsed Drain Current Unit - 55 to 150 260 °C Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering. d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. e. Based on TC = 25 °C. Document Number: 74668 S-82119-Rev. C, 08-Sep-08 www.vishay.com 1 Si8441DB Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Steady State Symbol Typical RthJA Maximum 37 45 RthJC 7 9.5 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 85 °C/W. c. Case is defined as top surface of the package. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = - 250 µA VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 5 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea a Forward Transconductance RDS(on) gfs V - 20 mV/°C 2.2 - 0.35 - 0.7 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 70 °C - 10 VDS ≤ - 5 V, VGS = - 4.5 V -5 µA A VGS = - 4.5 V, ID = - 1 A 0.066 0.080 VGS = - 2.5 V, ID = - 1 A 0.085 0.102 VGS = - 1.8 V, ID = - 1 A 0.105 0.128 VGS = - 1.5 V, ID = - 1 A 0.145 0.198 VGS = - 1.2 V, ID = - 0.5 A 0.200 0.600 VDS = - 10 V, ID = - 1 A 7 VDS = - 10 V, VGS = 0 V, f = 1 MHz 130 VDS = - 10 V, VGS = - 5 V, ID = - 1 A 8.5 13 7.7 12 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time www.vishay.com 2 600 70 VDS = - 10 V, VGS = - 4.5 V, ID = 1 A 0.85 VGS = - 0.1 V, f = 1 MHz 6.2 td(off) tf nC 1.6 td(on) tr pF VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 1 Ω Ω 15 25 30 45 35 55 10 15 ns Document Number: 74668 S-82119-Rev. C, 08-Sep-08 Si8441DB Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions IS TC = 25 °C Min. Typ. Max. Unit Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb - 10.5 - 15 IS = - 1 A, VGS = 0 V IF = - 1 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.7 - 1.2 V 20 40 ns 7 15 nC 11 9 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 74668 S-82119-Rev. C, 08-Sep-08 www.vishay.com 3 Si8441DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 15 VGS = 4.5 thru 2.5 V 4 I D - Drain Current (A) I D - Drain Current (A) 12 VGS = 2 V 9 6 VGS = 1.5 V 3 TC = 125 °C 2 TC = 25 °C 1 3 TC = - 55 °C VGS = 1 V 0 0 0 0.5 1.0 1.5 2.0 2.5 0 3.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1000 0.40 800 0.30 VGS = 1.5 V 0.25 C - Capacitance (pF) RDS(on) - On-Resistance (W) 0.35 VGS = 1.8 V 0.20 0.15 VGS = 2.5 V Ciss 600 400 0.10 Coss 200 0.05 VGS = 4.5 V Crss 0 0.00 0 3 6 9 12 0 15 8 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 5 20 1.6 ID = 1 A ID = 1 A 4 1.4 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 4 VDS = 10 V 3 VDS = 16 V 2 VGS = 4.5 V, 2.5 V, 1.8 V 1.2 VGS = 1.5 V 1.0 0.8 1 0 0 www.vishay.com 4 2 4 6 8 10 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 Document Number: 74668 S-82119-Rev. C, 08-Sep-08 Si8441DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.25 100 RDS(on) - On-Resistance (W) I S - Source Current (A) ID = 1 A 10 TJ = 150 °C TJ = 25 °C 0.20 0.15 125 °C 0.10 25 °C 1 0.0 0.05 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 30 0.7 ID = 250 µA 25 0.6 Power (W) VGS(th) (V) 20 0.5 0.4 15 10 0.3 0.2 - 50 5 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 1000 Pulse (s) TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by R DS(on)* I D - Drain Current (A) 10 100 µs 1 ms 1 10 ms 100 ms 1 s, 10 s DC 0.1 TC = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 74668 S-82119-Rev. C, 08-Sep-08 www.vishay.com 5 Si8441DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 15 12 12 Power Dissipation (W) I D - Drain Current (A) 10 8 6 4 9 6 3 2 0 0 0 25 50 75 100 125 150 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 125 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 74668 S-82119-Rev. C, 08-Sep-08 Si8441DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 65 °C/W 0.02 Single Pulse 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 74668 S-82119-Rev. C, 08-Sep-08 www.vishay.com 7 Si8441DB Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 6-BUMP (2 x 3, 0.5 mm PITCH) 6 x Ø 0.24 to 0.26 Note 3 Solder Mask ~ Ø 0.25 A1 e A2 1 A C B A 2 Bump Note 2 e e Recommended Land S S D S G e 8441 Mark on Backside of Die s XXX D D s 6xØb s e e s E Notes (Unless Otherwise Specified): 1. All dimensions are in millimeters. 2. Six (6) solder bumps are lead (Pb)-free 95.5Sn, 3.8Ag, 0.7Cu with diameter ∅ 0.30 to 0.32 mm. 3. Backside surface is coated with a Ti/Ni/Ag layer. 4. Non-solder mask defined copper landing pad. 5. is location of Pin 1. · Dim. Millimetersa Inches Min. Nom. Max. Min. Nom. Max. A 0.510 0.575 0.590 0.0201 0.0224 0.0232 A1 0.220 0.250 0.280 0.0087 0.0098 0.0110 A2 0.290 0.300 0.310 0.0114 0.0118 0.0122 b 0.300 0.310 0.320 0.0118 0.0122 0.0126 e 0.500 0.0197 s 0.230 0.250 0.270 0.0090 0.0098 0.0106 D 0.920 0.960 1.000 0.0362 0.0378 0.0394 E 1.420 1.460 1.500 0.0559 0.0575 0.0591 Notes: a. Use millimeters as the primary measurement. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74668. www.vishay.com 8 Document Number: 74668 S-82119-Rev. 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